K 300 Search Results

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

kt630

Contextual Info: 2 5 C a « * rai 3*. H Y II-S K /K T -6 -2 0 0 A IIY H -S K /K T -6 -3 0 0 A H Y H - S K /K T - 6 - 5 0 0 A H Y H - S K /K T - 6 - 6 0 0 A ± 200A ± 300A ± 500A ± 600A ± 400A ±600A ± 900A ± 900A > 1Ö k o ( m . Æ . . « î a i) S K * 74 ± 4 v j *u

Contextual Info: Speciality Polymer Aluminum Electrolytic Capacitors Typical Data Surface Mount Type_ Application Guidelines Frequency Characteristics 100 300 3K 6K 10*. 30 K 60 K 100 K 300 K 6 0 0 K IM 3W 6M 10M 3CM Frequency Hzi 1. Circuit Design

CT7343

Abstract: R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features K K K K K K K K K K K K The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

Contextual Info: silìJllCllii I f r m s m axim um v a lu e for co n tin u o u s operation V rsm V 300 A rrm SEMIPACK 2 Fast Diode Modules I f a v (sin. 180; Tease = 85 °C; 50 Hz) V 141 A 400 S K K E 165 M 04 600 S K K E 165 M 06 800 S K K E 165 M 08 SKKE165M S K K E 165M

Contextual Info: 10 Q.5±0'05 0.25MIN. X W X (PITCH) ii ii ii K K K K K K K K K K K K K K K K Kty PPPPPPPPPP^: 5.4 X X S X U Y X X N "I / (X X X N E ) P.C.BOARD PATTERN DIMENSION. (REF.) (MOUNTING AREA) a XCM CM 1X W YH MATERIAL X X v X X A L C P X X X A N ( X ) .UL94V-0

GRM42-6X7R105K25

Abstract: GRM42-6X7R225K16 SC1454 SC1454XIMSTR Si4410
Contextual Info: SC1454 Dual 150mA Ultra Low Dropout, Low Noise Regulator POWER MANAGEMENT Description Features K K K K K K K K K K K The SC1454 contains two ultra low dropout voltage regulators ULDOs . It operates from an input voltage range of 2.25V to 6.5V, and a wide variety of output

SHARP LED gl3

Abstract: GL6E201 GL6P202 GL7R GL3P404 GL3P422 GL7P202 GL3P305 GL3P306 GL3P411
Contextual Info: Numeric LED Character Type of display height mm Radiation color A K A 10.16 K A 14.12 K A 8.0 K A 6.2 K A 8.0 K A 8.4 K A 7.6 K A 7.6 K A K 10.0 A K Page for ratings/characteristics diagrams *1 A: Anode common K: Cathode common Substrate Type Mold Type 6.0

JESD-79

Abstract: ddr3 2133 jesd79 JESD79-3E
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD79-3E

Abstract: 512Mx8 NT8GC72C4PC0NL D21-D20 512Mx8 SPD
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD79-3E

Abstract: PC3-14900 DDR3 SDRAM PC3-14900
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

555 ic

Abstract: led soft start circuit 555 timer SC603 SC603IMLTRT SC603EVB SC603IMLTR
Contextual Info: SC603 CHARGE PUMP REGULATOR WITH SELECTABLE 5.0V/4.5V OUTPUT POWER MANAGEMENT Description Features K K K K K K K K K K K The SC603 is a versatile charge pump designed for use in battery operated power supply applications. The wide input range is matched for Li-Ion battery applications. Only two tiny ceramic bucket capacitors are

AC50V

Abstract: FRS013-3000-1 T532
Contextual Info: -SD/miniSD- 2in1 FRS013-3000-1 K * ttS 1 1 ^ 4 '* - 1 7 > U "j H t z m i am # # 1B im • S —-?Jls-7rt7>h • *-K K Íft*J » ib K tt •¿ - K t t H M M ir t iK • S D * - K f ê f t ] * 'f - y 3 \ • miniSD *-K fê *Q • RoHSftjfc 7.1-y? mt iIS ¡tÈHÌSÌ/L

Contextual Info: CERAMIC DISC CAPACITORS For High Voltage and Suppression Applications \ \ Dielectric Class 2 Class 1 Type Designation HAU HBU HCU HDU HEU HFU N750 Ceramic Material HAZ HAE HAX HBZ HBE HBX HCZ HCE HCX HDE K K K K K K K K K K 2000 6000 10000 2000 6000 10000

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

Semikron sk 75

Contextual Info: SEMIKRON V rsm I frms m axim um va lue fo r continuous operation V rrm 300 A Fast Diode Modules V I fav (sin. 180; T case = 75 °C; 50 Hz) 165 A 400 S K K E 165 M 0 4 600 S K K E 165 M 06 800 S K K E 165 M 08 Symbol Conditions 160 A Ifav Ifsm Tvj = 25 °C; 10 ms

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

Contextual Info: CERAMIC CHIP / HIGH VOLTAGE C0G DIELECTRIC CAPACITANCE VALUES AND THICKNESS TARGETS in. C,D C,D K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M D,F,G,J,K,M D,F,G,J,K,M D,F,G,J,K,M

Contextual Info: LTH-XXX-XX-X-D-A-XX REVISION K No OF POS + 2 x .01969[.5000]) + .1100[2.794] REF .039 0.99 REF .030 0.76 REF K SEE NOTE 10 DO NOT SCALE FROM THIS PRINT .189 4.80 REF K 01 OPTION -TR: TAPE AND REEL -K: POLYAMIDE FILM PAD (USE K-500-300, SEE FIG. 2) No OF POSITIONS

PC3-12800

Abstract: nanya 8gb DDR3 DIMM NT8GC72B4PB0NL NT8GC72C8PB0NL B.A date sheet 2012 D35BA
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 512Mx8/1024Mx4 (4GB/8GB/16GB) SDRAM B-Die

C5-K3L

Abstract: 2R2 choke 476 25k 222
Contextual Info: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC compander, switching power supply) and other electronic equipment.

Thermistor K153

Abstract: k683 K470 thermistor K224 k682 K164 K2600
Contextual Info: Scheiben Disks Maßbild Typ Outline drawing Type Nenn­ Toleranz ß-Wert widerstand Rated Tolerance B value resistance ^25 Af?25 Q K164 m 10 15 : 5%, : 10 %, 22 : 20 % 68 5,5max 100 150 220 330 470 680 1k 1.5 k 2.2 k 3.3 k 4.7 k 6.8 k 10 k 15 k 22 k 33 k 47 k

VRP-30

Abstract: KVA05 KVA05R KVA06R KVA07 KVA07R KVA08 KVA08R KVA09 KVA09R
Contextual Info: INTERNATIONAL SEMICOND 4^E D • IISEM =1000370 000D01S 017 l ~ —0 ! " O HIGH VOLTAGE RECTIFIER ASSEMBLIES 0 .7 5 -1 .0 Am p Kilovolt, Std. R ecovery Rectifiers I SI P a rt N um ber K VA05 K VA06 K VA07 K V A06 K V A09 K VA10 K V A15 K V A20 K V A25 K VA30

OBS3000-18GM70-E5-V1

Abstract: C1102 Pepperl Fuchs C110 H160 OBS3000-18GM70-E4-V1
Contextual Info: OBS3000-18GM70-.-V1 Reflection light beam switch OBS3000-18GM70-.-V1 with 4-pin, M12 connector Sensors in threaded housings K Detection range up to 3000 mm K Light/dark ON, programmable K Protection degree IP67 K Strong metallic housing in cylindrical shape M18 x 1