K 30 TRANSISTOR Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

3819

Abstract: 80424 T072
Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15

PDTA115EE

Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Darlington Transistor

Abstract: MPSA13 MPSA14
Contextual Info: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V

BCY55

Abstract: "bcy 55" "dual TRANSISTORs" "Differential Amplifier" transistor t05
Contextual Info: Compound Devices N P N Dual Transistors in 6 lead T 0 5 Encapsulation Type Characteristics at T am|D = 25°C Maxim um ratings 'C/M mA Pto f1 W hF E {V C E n C i V/uA hF E 1 lh F E 2 V N K T 6003 40 30 0.15 100 (5/101 0.83 .1.2 N K T 6010 40 30 0.15 100 (5/101

D38S5

Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,

IC 7500

Abstract: MOC3002 MOC3003 MOC3007 MOTOROLA SCR 1Ft TRANSISTOR H11C1 4N39 H11AA1 H11AA2
Contextual Info: OPTOELECTRONICS — COUPLERS/ISOLATORS continued SCR Output — Style 7 Device Peak Blocking Voltage LED Trigger Current-lp-|(VA k = 50 V) Min Volts mA Max Industry Motorola 200 200 200 200 200 200 250 250 200 30 20 20 30 (TTL drive) 14(VAk = 100) 30 20

ADCM371

Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA

PDTB123Y

Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

BC807

Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Contextual Info: Preview iiK inRMS DATA SHEET_ March 1994 M 65604 256 K x 4 ULTIMATE CMOS SRAM FEATURES . . . . . . . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25/30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW typ

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: ANALOG DEVICES ± 1 5 V Operation Digital Potentiometer AD7376* FEATURES 128 Position P otentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdown: Less than 1 jjiA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)

Contextual Info: LOW INPUT CURRENT HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES . FEATURES DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5000 Vr.m.s. • HIGH SPEED SWITCHING tr = 30 us, tf = 30 us TYP, @ Rl_ = 10 k ft PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically

G524

Abstract: HTRB 2N3501 sem 2C3501KV 2C3637KV
Contextual Info: Data Sheet No. CP3501 2N3498, 2N3499 2N3500, 2N3501 Chip Type 2C3501KV Geometry 5620 Polarity NPN REF: MIL-PRF-19500L/366 30 MILS B E 30 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance

102 TRANSISTOR

Abstract: Z2E diode KD224503 K0224503
Contextual Info: K M B S r KD224503 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

KTC8050A

Abstract: KTC8050
Contextual Info: SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ・Complementary to KTC8050A. N K MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V VEBO -5 V

AD5242

Abstract: AD5200 AD5201 AD5203 AD5204 AD5206 AD5241 digital potentiometer for AC AD5235
Contextual Info: a I2C -Compatible 256-Position Digital Potentiometers AD5241/AD5242 FEATURES 256 Position 10 k⍀, 100 k⍀, 1 M⍀ Low Tempco 30 ppm/؇C Internal Power ON Midscale Preset Single Supply 2.7 V to 5.5 V or Dual Supply ؎2.7 V for AC or Bipolar Operation I2C-Compatible Interface

BC516

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current

KTC8050A

Abstract: IC350 KTC8050
Contextual Info: SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ・Complementary to KTC8550A. N K MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V VEBO 5 V Collector Current

Amplifier with transistor bc549

Abstract: BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet
Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING Ta=25 G J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 VEBO

KTA1658

Abstract: KTC4369
Contextual Info: SEMICONDUCTOR KTA1658 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Good Linearity of hFE. Complementary to KTC4369. G B E SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING Ta=25 VCBO -30 V Collector-Emitter Voltage

TEXAS 2N3771

Abstract: 2h37 STR 5012 lc 5012 m
Contextual Info: TYPES 2N3771, 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS ¡5 3 m V> H K> 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current 2N3771 20-A Rated Continuous Collector Current (2N3772)