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    K 30 TRANSISTOR Search Results

    K 30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    K 30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


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    1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA PDF

    3819

    Abstract: 80424 T072
    Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15


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    PDF

    PDTA115EE

    Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ


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    PDTA115E R75/03/pp14 PDTA115EE PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89 PDF

    Darlington Transistor

    Abstract: MPSA13 MPSA14
    Contextual Info: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V


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    MPSA13/14 100mA, MPSA13 MPSA14 100MHz, Darlington Transistor MPSA13 MPSA14 PDF

    BCY55

    Abstract: "bcy 55" "dual TRANSISTORs" "Differential Amplifier" transistor t05
    Contextual Info: Compound Devices N P N Dual Transistors in 6 lead T 0 5 Encapsulation Type Characteristics at T am|D = 25°C Maxim um ratings 'C/M mA Pto f1 W hF E {V C E n C i V/uA hF E 1 lh F E 2 V N K T 6003 40 30 0.15 100 (5/101 0.83 .1.2 N K T 6010 40 30 0.15 100 (5/101


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    PDF

    D38S5

    Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
    Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,


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    2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 hitachi 16 X 2 lcd 2N5232A PDF

    IC 7500

    Abstract: MOC3002 MOC3003 MOC3007 MOTOROLA SCR 1Ft TRANSISTOR H11C1 4N39 H11AA1 H11AA2
    Contextual Info: OPTOELECTRONICS — COUPLERS/ISOLATORS continued SCR Output — Style 7 Device Peak Blocking Voltage LED Trigger Current-lp-|(VA k = 50 V) Min Volts mA Max Industry Motorola 200 200 200 200 200 200 250 250 200 30 20 20 30 (TTL drive) 14(VAk = 100) 30 20


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    H11C1 H11C2 H11C3 H74C1 MOC3002 MOC3003 MOC3007 IC 7500 MOTOROLA SCR 1Ft TRANSISTOR 4N39 H11AA1 H11AA2 PDF

    ADCM371

    Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
    Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA


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    128-Position AD7376 AD73762 TSSOP-14 PR01119-0-7/05 ADCM371 Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512 PDF

    PDTB123Y

    Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


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    PDTB123YT O-236AB) PDTD123YT. AEC-Q101 BC807 PDTB123Y PDF

    BC807

    Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
    Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


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    PDTB123YT O-236AB) PDTD123YT. AEC-Q101 BC807 PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT PDF

    Contextual Info: Preview iiK inRMS DATA SHEET_ March 1994 M 65604 256 K x 4 ULTIMATE CMOS SRAM FEATURES . . . . . . . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25/30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW typ


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    65604/Rev PDF

    AD7376AN100

    Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation


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    AD7376* AD7376 128-position 16-Lead AD7376AN100 PDF

    Contextual Info: ANALOG DEVICES ± 1 5 V Operation Digital Potentiometer AD7376* FEATURES 128 Position P otentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdown: Less than 1 jjiA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation


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    AD7376* AD7376 16-Lead PDF

    Contextual Info: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)


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    PDF

    Contextual Info: LOW INPUT CURRENT HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES . FEATURES DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5000 Vr.m.s. • HIGH SPEED SWITCHING tr = 30 us, tf = 30 us TYP, @ Rl_ = 10 k ft PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically


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    PS2503-1, PS2503L-1, b427S25 PS2503L-1 PS2503L-2 PS2503L-4 PDF

    G524

    Abstract: HTRB 2N3501 sem 2C3501KV 2C3637KV
    Contextual Info: Data Sheet No. CP3501 2N3498, 2N3499 2N3500, 2N3501 Chip Type 2C3501KV Geometry 5620 Polarity NPN REF: MIL-PRF-19500L/366 30 MILS B E 30 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance


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    CP3501 2C3501KV 2N3498, 2N3499 2N3500, 2N3501 MIL-PRF-19500L/366 2C3637KV MIL-PRF-19500L G524 HTRB 2N3501 sem PDF

    102 TRANSISTOR

    Abstract: Z2E diode KD224503 K0224503
    Contextual Info: K M B S r KD224503 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    KD224503 Amperes/600 102 TRANSISTOR Z2E diode KD224503 K0224503 PDF

    KTC8050A

    Abstract: KTC8050
    Contextual Info: SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ・Complementary to KTC8050A. N K MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V VEBO -5 V


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    KTC8550A KTC8050A. KTC8050A KTC8050 PDF

    AD5242

    Abstract: AD5200 AD5201 AD5203 AD5204 AD5206 AD5241 digital potentiometer for AC AD5235
    Contextual Info: a I2C -Compatible 256-Position Digital Potentiometers AD5241/AD5242 FEATURES 256 Position 10 k⍀, 100 k⍀, 1 M⍀ Low Tempco 30 ppm/؇C Internal Power ON Midscale Preset Single Supply 2.7 V to 5.5 V or Dual Supply ؎2.7 V for AC or Bipolar Operation I2C-Compatible Interface


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    256-Position AD5241/AD5242 AD5241 16-Lead R-16A) C00926 RU-16) 14-Lead RU-14) AD5242 AD5200 AD5201 AD5203 AD5204 AD5206 AD5241 digital potentiometer for AC AD5235 PDF

    BC516

    Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current


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    BC516 -100mA, 100MHz BC516 PDF

    KTC8050A

    Abstract: IC350 KTC8050
    Contextual Info: SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ・Complementary to KTC8550A. N K MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V VEBO 5 V Collector Current


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    KTC8050A KTC8550A. KTC8050A IC350 KTC8050 PDF

    Amplifier with transistor bc549

    Abstract: BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet
    Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING Ta=25 G J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 VEBO


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    BC549/550 BC559/560. BC550 BC549 100mA, 100MHz Amplifier with transistor bc549 BC550 BC549 BC549 NPN transistor BC549 DATASHEET bc549 equivalent transistor bc550 bc549 noise figure LBC550 BC549 NPN transistor download datasheet PDF

    KTA1658

    Abstract: KTC4369
    Contextual Info: SEMICONDUCTOR KTA1658 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Good Linearity of hFE. Complementary to KTC4369. G B E SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING Ta=25 VCBO -30 V Collector-Emitter Voltage


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    KTA1658 KTC4369. -10mA, KTA1658 KTC4369 PDF

    TEXAS 2N3771

    Abstract: 2h37 STR 5012 lc 5012 m
    Contextual Info: TYPES 2N3771, 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS ¡5 3 m V> H K> 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current 2N3771 20-A Rated Continuous Collector Current (2N3772)


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    2N3771, 2N3772 2N3771) 2N3772) 2N3771 2N3772 TEXAS 2N3771 2h37 STR 5012 lc 5012 m PDF