K 30 TRANSISTOR Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

3819

Abstract: 80424 T072
Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15

PDTA115EE

Contextual Info: DISCRETE SEMICONDUCTORS DAT PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

PDTA115EE

Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

H 13003

Abstract: SH 13003 13003 sd transistors 13003 SA5055 H13003
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.2 D -P A C K Type T ran sisto rs lc Device Type A VcEO (V) NPN PNP 0.5 300 K SH 3 40 K SH 3 50 1 40 K SH 2 9 K SH 3 0 KSH 30C Condition Condition Ve V ce (V) 10 lc (A) 0.05 lc (A) Ib (A) MIN MAX 30 240 4 1 15 75 1 V CE(sat)(V)

PDTC144TE

Abstract: PDTA144
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144T series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open Product specification Supersedes data of 2003 Oct 30 2004 Apr 27 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

Darlington Transistor

Abstract: MPSA13 MPSA14
Contextual Info: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V

MPC555

Abstract: QADC64
Contextual Info: TRANSPORTATION SYSTEMS GROUP CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC555.K Mask Set: 01K02A General Business Use Report Generated: Thu Mar 30, 2000, 13:53:03 Page 1 = | MPC555.K 01K02A Modules |

PEMB1

Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.

PEMB1

Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.

BCY55

Abstract: "bcy 55" "dual TRANSISTORs" "Differential Amplifier" transistor t05
Contextual Info: Compound Devices N P N Dual Transistors in 6 lead T 0 5 Encapsulation Type Characteristics at T am|D = 25°C Maxim um ratings 'C/M mA Pto f1 W hF E {V C E n C i V/uA hF E 1 lh F E 2 V N K T 6003 40 30 0.15 100 (5/101 0.83 .1.2 N K T 6010 40 30 0.15 100 (5/101

OTC4330

Abstract: 2N6563 2N6561 OTC4530 OTC453Q SVT7600 SVT7601 SVT7602
Contextual Info: MAE D OPTEK TECHNOLOGY INC bTTfiSaO ODDlHfl? 4TS • OTK ■ ProductBulMlnQTC4530 duct Built August 1990 U K Ifc K Fast Switching NPN Power Transistor Type OTC453Q T-ss-n 300V, 30 A ■ a Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

D38S5

Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,

ADCM371

Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA

PDTB123Y

Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

MPC555

Abstract: QADC64 AR588
Contextual Info: MOTOROLA Part: MPC555.K Mask Set: 01K02A Transportation Systems Group Errata Sheet Customer Errata and Information Sheet Transportation Systems Group Part: MPC555.K Mask Set: 01K02A. Report generated 30 March 2000 . TRANSPORTATION SYSTEMS GROUP CUSTOMER ERRATA AND INFORMATION SHEET

BC807

Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

ad8601

Abstract: ad5263
Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM 256-position, 4-channel End-to-end resistance 20 kΩ, 50 kΩ, 200 kΩ Pin-selectable SPI - or I2C®-compatible interface Power-on preset to midscale Two package address decode pins AD0 and AD1 Rheostat mode temperature coefficient 30 ppm/°C

AD8501

Abstract: FDV301N AD5280 AD5282 RU-14 TSSOP-16 ADR512
Contextual Info: Single/Dual, +15 V/±5 V, 256-Position, I2C-Compatible Digital Potentiometer AD5280/AD5282 FEATURES APPLICATIONS AD5280: 1 channel AD5282: 2 channels 256 positions 5 V to 15 V single supply; ±5.5 V dual-supply operation 20 kΩ, 50 kΩ, 200 kΩ Low temperature coefficient 30 ppm/°C

Contextual Info: Preview iiK inRMS DATA SHEET_ March 1994 M 65604 256 K x 4 ULTIMATE CMOS SRAM FEATURES . . . . . . . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25/30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW typ

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: ANALOG DEVICES ± 1 5 V Operation Digital Potentiometer AD7376* FEATURES 128 Position P otentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdown: Less than 1 jjiA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)