K 30 TRANSISTOR Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

PDTA115EE

Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

ADCM371

Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

102 TRANSISTOR

Abstract: Z2E diode KD224503 K0224503
Contextual Info: K M B S r KD224503 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

AD5242

Abstract: AD5200 AD5201 AD5203 AD5204 AD5206 AD5241 digital potentiometer for AC AD5235
Contextual Info: a I2C -Compatible 256-Position Digital Potentiometers AD5241/AD5242 FEATURES 256 Position 10 k⍀, 100 k⍀, 1 M⍀ Low Tempco 30 ppm/؇C Internal Power ON Midscale Preset Single Supply 2.7 V to 5.5 V or Dual Supply ؎2.7 V for AC or Bipolar Operation I2C-Compatible Interface

TEXAS 2N3771

Abstract: 2h37 STR 5012 lc 5012 m
Contextual Info: TYPES 2N3771, 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS ¡5 3 m V> H K> 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current 2N3771 20-A Rated Continuous Collector Current (2N3772)

AF MARKING CODE sot-25

Abstract: sot-25 marking AF
Contextual Info: 13ÌTO K O TK702xx 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Built-In Shutdown Control (Off Current, 8 (¿A Typ) Low Dropout Voltage (30 mV Typ) Very Small Surface Mount Package (SOT-25)

AM28F256

Abstract: A1H Transistor AM28F256-150PC
Contextual Info: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINAL AMDH Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

PSMN2R5-30YL

Contextual Info: LF PA K PSMN2R5-30YL N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN7R0-30YL

Abstract: PSMN7R0-30
Contextual Info: LF PA K PSMN7R0-30YL N-channel 30 V 7 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

10DC

Abstract: TPIC6B259
Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 -A P R IL 1994 • Low r D s 0 n • • . 5 £ 2 Typical • Avalanche Energy . . . 30 mJ • Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current • • • • D w OR N p a c k a g e

pin configuration of ic 1496

Abstract: OA200 IC 1496 function K11220A MARKING code u1 sot 563
Contextual Info: r& T O K O TK112xxA VOLTAGE REGULATOR WITH ON/OFF SWITCH APPLICATIONS FEATURES High Voltage Precision at ± 2.4% Battery Powered Systems Active High On/Off Control Cellular Telephones Very Low Dropout Voltage 80 mV at 30 mA Pagers Very Low Noise Personal Communications Equipment

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

AM28F010A

Abstract: TSR032-32-Pin
Contextual Info: FINAL Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: räTO K O TK75050 SMART MOSFET DRIVER FEATURES APPLICATIONS • 30 ns Rise and Fall into 1000 pF ■ Power MOSFETs and IGBTs ■ 300 |iA Stand-by Current Consumption ■ Switch Mode Power Supplies ■ Under Voltage Lockout Combined with First Pulse ■ Power Factor Controllers

Contextual Info: rsiT O K O TK113xxB VOLTAGE REGULATOR WITH ON/OFF SWITCH APPLICATIONS FEATURES • High Voltage Precision at ± 2.0% ■ Battery Powered Systems ■ Active Low On/Off Control ■ Ceiluiar Telephones ■ Pagers ■ Very Low Dropout Voltage 80 mV at 30 mA ■ Very Low Noise

AM28F256A

Abstract: Am29Fxxx
Contextual Info: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

A0L-A12L

Abstract: l4340
Contextual Info: PRELIMINARY M 67025 8 K x 16 CMOS DUAL PORT RAM FEATURES . . FAST ACCESS TIME: 20/25/30/35/45/55 ns WIDE TEMPERATURE RANGE: - 55 °C TO + 125 C 67025 L LOW POWER 67025 V VERY LOW POWER SEPARATE UPPER BYTE AND LOWER BYTE CONTROL FOR MULTIPLEXED BUS COMPATIBILITY

S2MH

Contextual Info: IHM M 67024 DATA SHEET 4 K x 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY WIDE TEMPERATURE RANGE: - 55 °C TO + 125 °C 67024 L LOW POWER 67024 V VERY LOW POWER SEPARATE UPPER BYTE AND LOWER BYTE CONTROL

HP 3700 optocoupler

Abstract: Optocoupler 117A
Contextual Info: WhoI H EW LE TT m LfiM PA C K A RD 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) 15 to 30 Volts -40°C to 100°C UL Recognized (UL1577) 2500 Vrms/1 min. (HCPL3150) 3750 Vrms/1 min. (HCPL-315J)

Contextual Info: W h p t HEW LETT mL’HM P A C K A R D High CMR Analog Isolation Amplifier Technical Data HCPL-7820 Features • Fast Propagation Delays for Over-Current and Fault D etection Sensing • High Common Mode Rejection CMR : 30 kV/ps at VCM = 1000 V* • 3% Gain Tolerance