K 30 TRANSISTOR Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

PDTA115EE

Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

ADCM371

Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: ANALOG DEVICES ± 1 5 V Operation Digital Potentiometer AD7376* FEATURES 128 Position P otentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdown: Less than 1 jjiA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)

102 TRANSISTOR

Abstract: Z2E diode KD224503 K0224503
Contextual Info: K M B S r KD224503 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

AD5242

Abstract: AD5200 AD5201 AD5203 AD5204 AD5206 AD5241 digital potentiometer for AC AD5235
Contextual Info: a I2C -Compatible 256-Position Digital Potentiometers AD5241/AD5242 FEATURES 256 Position 10 k⍀, 100 k⍀, 1 M⍀ Low Tempco 30 ppm/؇C Internal Power ON Midscale Preset Single Supply 2.7 V to 5.5 V or Dual Supply ؎2.7 V for AC or Bipolar Operation I2C-Compatible Interface

BC516

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current

KTA1658

Abstract: KTC4369
Contextual Info: SEMICONDUCTOR KTA1658 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Good Linearity of hFE. Complementary to KTC4369. G B E SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING Ta=25 VCBO -30 V Collector-Emitter Voltage

TEXAS 2N3771

Abstract: 2h37 STR 5012 lc 5012 m
Contextual Info: TYPES 2N3771, 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS ¡5 3 m V> H K> 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current 2N3771 20-A Rated Continuous Collector Current (2N3772)

ICE2AS01 equivalent

Abstract: ICE2as01 ICE2BS01 equivalent ICE2AS01 power S01G ICE*2as01 ICE2BS01G SMPS controller 365 ICE2BS01 mouser transformer 006
Contextual Info: Datasheet, Version 2.1, 30 Jun 2006 PWM-FF IC ICE2AS01/S01G ICE2BS01/S01G Off-Line SMPS Current Mode Controller Pow e r M a na ge m e nt & S upply N e v e r s t o p t h i n k i n g . ICE2AS01/S01G ICE2BS01/S01G Revision History: 2006-06-30 Previous Version:

AF MARKING CODE sot-25

Abstract: sot-25 marking AF
Contextual Info: 13ÌTO K O TK702xx 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Built-In Shutdown Control (Off Current, 8 (¿A Typ) Low Dropout Voltage (30 mV Typ) Very Small Surface Mount Package (SOT-25)

IRG4BC30KD-S

Contextual Info: International IG R Rectifier euminaw 4 IR G B C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 30 PD9,594A K D -S Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tjc = 1 0 ms , @360V Vce start , T j = 125°C,

TMP17

Abstract: "temperature control" thermocouple OP196 OP97 REF43 TMP17FS TMP17GS
Contextual Info: Low Cost, Current Output Temperature Transducer TMP17* FEATURES Operating Temperature Range: –40؇C to +105؇C Single-Supply Operation: 4 V to 30 V Excellent Repeatability and Stability High Level Output: 1 ␮A/K Monolithic IC: Temperature In/Current Out

Contextual Info: AVANTEK INC M4È D ^A V A N T E K n . m i t t O Q O T ^ a i IA VA 3 UTO /UJC 514 Series Thin-Fiim Cascadable Am plifier 30 to 200 MHz • FEATURES APPLICATIONS • • • • • IF/RF Amplification • Low Power System Frequency Range: 30 to 200 MHz Low Noise Figure: 1,9 dB Typ

AM28F256

Abstract: A1H Transistor AM28F256-150PC
Contextual Info: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

PSMN5R0-30YL

Contextual Info: LF PA K PSMN5R0-30YL N-channel 30 V 5 mΩ logic level MOSFET in LFPAK Rev. 4 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN4R0-30YL

Contextual Info: LF PA K PSMN4R0-30YL N-channel 30 V 4 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN3R5-30YL

Contextual Info: LF PA K PSMN3R5-30YL N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK Rev. 4 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

2N1722

Abstract: S48SC 2N1724 2N343B
Contextual Info: TYPES 2N1722, 2N1724 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS 30 09 H m C < HIGH-FREQUENCY POWER TRANSISTORS • 50 Watts at 100*C Case Temperature • Minimum h of 10 Megacyles <r 2 • Maximum Res of 0.5 Ohm at 2 Amperes k • Maximum V b i of 2 Volts at 2 Amperes lc

Contextual Info: FINAL AMDH Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

TMP17

Contextual Info: Low Cost, Current Output Temperature Transducer ANALOG DEVICES TMP17* FUNCTIONAL DIAGRAM FEATURES Operating Temperature Range: -40°C to +105°C Single Supply Operation: + 4 V to +30 V Excellent Repeatability and Stability High Level Output: 1 jxA/K Monolithic 1C: Temperature In/Current Out