JY MARKING Search Results
JY MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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JY MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking JY sot-23
Abstract: bav199 JY marking marking JY JY diode BAV199
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OT-23 BAV199 OT-23 150mA marking JY sot-23 bav199 JY marking marking JY JY diode BAV199 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV199 SOT-23 SWITCHING DIODE FEATURES z This Switching Diode has The Following Features: z Low Leakage Current Applications 1 3 Marking: JY 2 Maximum Ratings @Ta=25℃ Parameter |
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OT-23 BAV199 OT-23 150mA | |
Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel BA V 199 JY s Q62702-A921 Pin Configuration Package1) 3 ¿ -EH I SOT-23 EH ° DM07005 |
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Q62702-A921 OT-23 DM07005 | |
JY diode
Abstract: marking code JY BAV199W JY marking
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BAV199W JY diode marking code JY BAV199W JY marking | |
S763T
Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
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000543Q 569-GS S763T JY marking transistor TRANSISTOR SOT-23 marking JE | |
diode marking code 4n
Abstract: JY diode JY marking E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw marking code jyw
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0514Please diode marking code 4n JY diode JY marking E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw marking code jyw | |
HIU-766
Abstract: HIU 766 LQ080V3DG01 TV backlight inverter Transformers LCY-03094B D1601 harison HIU-766 LCY-03094
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LCY-03094B LQ080V3DG01 LCY-03094 LCY-03094A LCY-03094B-17 lcy-03094b-18 LQ080V30001 LCY-03094B-19 DH479 DH480^ HIU-766 HIU 766 LQ080V3DG01 TV backlight inverter Transformers LCY-03094B D1601 harison HIU-766 | |
Contextual Info: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode |
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Q62702-A921 OT-23 EHA07005 fl535bOS D1ED421 | |
Contextual Info: TO SHIBA J1FWJ44L TOSHIBA 5CHOTTKY BARRIER RECTIFIER SCH OTT KY BARRIER TYPE 111 F W I d d i Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Low Forward Voltage ; Vp = 0.40 V (Max. • Average Forward Current : Ijr (AV)= 1*0A • Repetitive Peak Reverse Voltage : Vj^j^jy/[ = 30V |
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J1FWJ44L U1FWJ44L | |
diode "jyw"
Abstract: JYW diode JY diode RELAYS FUJITSU 250VA E56140 relay 3a 30VDC
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48VDC diode "jyw" JYW diode JY diode RELAYS FUJITSU 250VA E56140 relay 3a 30VDC | |
marking jyw
Abstract: jyw marking JY transistor JY-105-K JY-101-K jy5h JY marking JY marking transistor diode marking code 4n jy105k
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JY marking transistor
Abstract: JY diode E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw JYW MARKING jy105k
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HC49/U5HContextual Info: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:51 Uhr 25. Seite 25 0 Jy actual size SMQ series • SMU5 surface mount quartz crystal features • same pad layout as MG3A ■ extended temperature range SMU5 HC49/U5H - SMD type frequency 3.579545 MHz ~ 25.0 MHz fundamental AT-cut |
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HCJ/KA/A027E/2000 HC49/U5H | |
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R EVIS IO N S 00 AD LTR DESCRIPTION H1 REV PER ECO—1 0 —001 91 5 DATE DWN APVD 05M AR2010 JY SY 10SEP10 JS MQW |
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AR2010 10SEP10 ECR-10-018652 31MAR2000 | |
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mcr 5152
Abstract: UM82C450 csc 5151 rts 5136 um82c650 csc 5151 a T-15 UM82C550 UM82C550l
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UM82C550 UM82C450 UM82CS50 UM82C650 UM82C550 UM82C550L 44LPLCC mcr 5152 csc 5151 rts 5136 csc 5151 a T-15 | |
VDE 0435 time relay
Abstract: diode marking code 4n JY diode relay vde 0435 E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw
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0514Please VDE 0435 time relay diode marking code 4n JY diode relay vde 0435 E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw | |
JY-101-K
Abstract: JY marking transistor diode marking code 4n JY marking marking code 4n C150 JY-105-K JY-107-K LR35579
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0514Please JY-101-K JY marking transistor diode marking code 4n JY marking marking code 4n C150 JY-105-K JY-107-K LR35579 | |
Contextual Info: i s jy u HI-REL HM 65681 5 Mill A1ATRA-HARRIS SEMICONDUCTOR 4K x 4 CMOS STATIC RAM JANUARY 1986 Pinout Features@ - ss°c to 125°C TO P VIEW • • • • • • • • • HIGH SPEED, FAST ACCESS TIME : 70/85/100 ns ASYNCHRONOUS STAND BY CURRENT : 500 pA max |
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MIL-STD-883C | |
1DEC2009Contextual Info: THIS DRAWING IS U N PU B LIS H E D . COPYRIGHT 2 3 4 RELEASED FOR PUBLICATION - - BY TYCO ELECTRONICS CORPORATION. REVISIONS H ALL INTERNATIONAL RIGHTS RESERVED. LTR D ESC RIPTIO N N2 DATE REV PER ECR—0 9 —0 2 7 1 3 6 1DEC2009 DWN APVD JY SY D D C C |
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1DEC2009 -10x2 0-24x2 48ROLLED 1DEC2009 | |
48lc
Abstract: 8M16 MT48LC16M8A2TG-8B MT48LC32M4A1 128MSDRAM MT48LC8M16A1TG
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096-cycle 128MSDRAM 54-PIN 48lc 8M16 MT48LC16M8A2TG-8B MT48LC32M4A1 MT48LC8M16A1TG | |
GSN2020R2
Abstract: GE C150 GSV2020R2 GS-2020 GE. C150 G-3130 3412R gs2030m G-3120 QMFZ2
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E56140 101-K JY101-K GSN2020R2, GSV2020R2, GS-2020 G-2520. 3412R. G-3120. GSN2020R2 GE C150 GSV2020R2 GE. C150 G-3130 3412R gs2030m G-3120 QMFZ2 | |
LT1841
Abstract: transistor 5B11 S8150 LT1241
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LT1241 250nA) 500kHz UC1842 300mV 300kHz T-5B-11 000bt LT1841 transistor 5B11 S8150 | |
Contextual Info: i jy?ow5w5ng W tfg g 1mSSmAn^imd _ 1_ 2 REVISIONS In H it ft r momribotura a r n h h r m m oont than bn whhoat Ra prior oonoert. A that no right la granM a ogy hriewnonon in thh rioounwnt sv u DESCRIPTION EEN DATE APPROVED Dec/07/10 1 ea on IP D -S U B TECHNICAL DATA |
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Dec/07/10 50sistance L717TW 21WA4 D90/07/H L717TWC21WA4PMP3SVRM6 | |
Contextual Info: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks M T48LC8M 8A1/A2 - 2 Meg x 8 x 4 banks M T48LC4M 16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron |
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MT48LC16M4A1 T48LC8M T48LC4M 16A1/A2 54-PIN |