JVS Search Results

3fs 4a

Abstract: smd DIODE 3FS smd diode marking 3fs
Contextual Info: Schottky Barrier Diode Single Diode O U T L IN E w n n w D3FS4A U nit! mm P a c k a g e : 2F Weight 0.16g Typ •hy - K - 7 - y 4 0 V 2 .6 A / C arhode m ark Feature I m • Small SMD • Low Vf=0.45V • Prbsm Rating • /JvS yS M D • f f i V f = 0.45 V

"z5w"

Contextual Info: 299 - e 14 « B f range MHz 335. 0 512. 0 30. 0 33.0 Po (W) P i = 0 . 3W 40. 0 45. 0 Vcc=12. 5V V t (%) 2/3 HRM(dB) -30. 0 Zin=Zou t=5 0f t A^JVSWR 2. 8 ffl^ysws 2 0 f(MHz) — E L : 3 35-360, SL: 360-380, UL:380-400, l : 4 004 2 0 , - : 4 3 0 - 4 5 0 , H : 4 5 0 - 4 7 0 , UH:4 7 0 - 4 9 0 , SH:490-5 12

F1310

Contextual Info: TM9765 http://www.amplifonix.com/tm9765.htm Amplifier Datasheet TM9765 Product Data Summary Parameter Min/Max Operating Frequency Noise Figure Gain Jower Output 1 dB Compression 2nd Order Intercept 3rd Order Intercept ¡Reverse Isolation VSWR Input jVSWR Output

PA6-GB20

Abstract: PA6-GB20-GF10 gf10 connector PA6-GB20GF10 ASM15 delphi 0SLD 15326057
Contextual Info: DO NOT SCALE 7 6 5 3 A DATE SYSTEMS AUTH DR CK 04JL97 A WAS PE062633 & RELEASED 970005 PHC JVS 27AP98 Al 15326058 REVISED 187001 PHC JHV 08JN98 B REVISED 187858 AUG AUG G G F F - CONN 16M GT 1 5 0 ,2 8 0 SLD E E 2 0 „5 44406 25 • 0 OHIO ELECTRIC REVISION RECORD

BAS116

Abstract: puls generator
Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 3 1 2 Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage

Q62702-A919

Abstract: MARKING 54 "Pin Diode"
Contextual Info: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit

Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 3 1 2 Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage

Contextual Info: 6 7 DO NOT SCALE 5 A 3 2 DATE SYM R E V IS IO N RECORD AUTH DR CK 2 1 JL95 A RELEASED 950005 AMV WTP 3 1AU95 B 168102 DAR 3KD REVISED MATERIAL 19DE95 B1 ADDED 10° DIM 169066 JVS AUG H H G G HOLD CONDUCTOR WIDTH FOR DISTANCE SHOWN. PRINTED CIRCUIT LAYOUT F

Contextual Info: 7 DO NOT SCALE 6 5 3 A 2 DATE SYM REVISION RECORD AUTH DR CK 14JL95 A RELEASED 950005 JVS AUG 21N095 B REVISED 169721 OOD MVA 25MR96 B1 CHANGED MATERIAL SPEC 171646 MVA MVA 25JL96 B2 REV SYM ADVANCED 174085 RRS RRS 31AU96 B3 23.26 + 0 . 2 4 / - 0 . 15 DIA

GS 069

Abstract: F10-S30 2SK2064 SHINDENGEN DIODE
Contextual Info: L V X v U - X /n° 7 “ M0SFET LVX Series Power M OSFET OUTLINE DIMENSIONS 2SK2064 Oase ; STO-220 F10S30 [U n it! ram] 300V 10A ill 10.2 ±Q-2 1.3 «•= Date code • À 2 S Â (Ciss) ft'/JvSlV =fc T9 a « * # • ^ v ffitn w a r uv m ex-< '.y5: v ? 5 M ' A t f ; s u ,

Contextual Info: MIL-DTL 38999 Series III Contact layouts 09 / A 01 35 98 1 Optical way 6#22D Service M 3#20 Service I 11 / B 01 01 02 02 04 05 12 22 1#12 Service II All series excepted JVS 1#8 Service I only for JVS 2#16 Service I 2 Optical ways 4#20 Service I 5#20 Service I

Contextual Info: 8D Series 38999 Bronze Series Connector part numbers Basic Series JVS 16 A 11 35 P N - 1 G Shell style: 00: Square flange receptacle 07: Jam nut receptacle 16: Plug with RFI shielding Material: A: Bronze housing material Shell size: 09, 11, 13, 15, 17, 19, 21, 23, 25

Contextual Info: 8D-JVS Series with quadrax contacts Derived from: MIL-DTL-38999 Series Serie III MIL-DTL-38999 III 67

IR LFN

Abstract: D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD
Contextual Info: Super Fast Recovery Diode Single Diode m tm m D1FK70 o u tlin e 700V 0.8A Feature • • • • • /JvS JS M D • S iS Œ • Vrm =700V Small SMD High Voltage Low Noise Vrm=700V Main Use • DC/D C o y it—9 • iS Iâ .F A lÆ f ê S • • • •

Contextual Info: h 7 > y ^ 5 ! / T ransistors 2SB851 2SB1278 2SB851 /2SB1278 4l^ ^ j lillliffl/M edium Power Amp. Epitaxial Planar PNP Silicon Transistors • ft* • W f i v liiH / D im e n s io n s Unit : mm 1) /JvSFTR/N- y > r - v lC T P c = 7 5 0 m W T 'i> 5 0 2) VCe o = - 8 0 V t l i E 7 i . 5 „

Contextual Info: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0

Contextual Info: LJ I li % to CO o to TERM . JVS 1 6 0 3 5 1 -1 160 3 5 1 -2 4 & 0 3 5 7 - .3 TINISH None, Tinplated M?Af£ A FOE U5C ON S T B H D fleO i g & tfT - L E F T FEBO PDC U SE OH (l_EFr -R lS M r A PPLICA TO f t &3 A P ft-ir_ *'ro cs | #W D fllN iftn / K E ftPPUc-»TOK£

12040993

Abstract: 12047767 1204099 Delphi 12040993
Contextual Info: DO NOT SCALE DATE SYM REVISIO N RECORD 08MY97 12077589 AUTH DR CK - P ID CREATED FROM SEPARATE P ID & REVISED - NO REV UPDATE REQ 'D 16FE98 177551 PHC JVS 12077589-D E T A IL UPDATEDREV LE V E L ADV TO "C " 186058 CM CM 2 6 . 0 REF £ & ^ S t\. ! ! ! ’— —

BAS116

Abstract: BCW66
Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 !  Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

Contextual Info: DELPHI L WARREN, PACKARD 44486 ELECTRIC OHIO SYSTEMS Dö NÔT Sôa LE DATE SYM REVISION RECORD AUTH DR CK 16JA97 A RELEASED 970005 MSP JAK 12MY97 Al 15305363 REVISED 176241 GPS JVS O4JN90 A2 ADDED NOTE # 4 B #5, #6 & # 7 a REMOVED MATING PART INFO AND REVISED NOTE #3 1B6809 MSP <LC

Contextual Info: DO NOT SCALE nn nn nn LP 1 3 .7 0 REF -2 o z PLCS 1— rr < CL DATE SYM 20JN96 A 13AU96 REVISION RECORD DR CK WAS PE061396 & RELEASED 960005 GGR JVS Al MATERIAL SPEC WAS PM002260-001 SILICONE 30JA98 O m Lfl AUTH A2 ADDED NOTE #5 174174 GGR PYP 1B4726 AUG AUG

Contextual Info: DO NOT SCALE ^t" h' vO C\J I m k LP < ,_i Q. 1 SYMBOL D E F I N I T I O N SYM 05N097 A WAS PE068882 & RELEASED 970005 JBS RMVI 08JA98 B REVISED GRAPHICS 02FE98 C MAT'L WAS R0071754 & 7 LAST NO. USED 7 AUTH DR CK 184762 FRG FKV REVISED 1B5703 JVS JVS 1LMY90

BAS116

Contextual Info: Silicon Low Leakage Diode BAS116 • Low Leakage applications • Medium speed switching times • Single diode Type M arking O rdering code 8-m m tape Package BAS116 JVs Q62702-A919 SOT 23 Maximum Ratings D escription BAS116 Symbol U nit Reverse voltage Peak reverse voltage

a77 smd

Abstract: D2FK60 J532 smd diode 0L
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Package : 2F D2FK60 Single Diode U n it-m m W e ig h t 0 .1 6 g T yp ¿ 7 -P V -? 600V 1.5A ’ • /JvSUSMD • S m all S M D •ra ttŒ • trr=75ns • trr= 75n s • < S V f = 1 .3 V • Low V f= 1.3V * v 2FK