JUPD4264 Search Results

UPD4264405

Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT juPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >iPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

UPD4265160-A60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jUPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The ^PD4264800, 4265800 are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

IRF 748 n

Abstract: PD4264800
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

PD4264800

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JuPD4264800, 4265800 64M -B IT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The ¿xPD42648Q0, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

4265165G5

Abstract: Oil 00037
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.

Contextual Info: " we NEC JJPD4264800, 4265800 8,388,608 X 8-Bit Dynamic CMOS RAM Preliminary Se p tem b er 1993 NEC Electronics Inc. Description RAS-only refreshing and 4096 a ddress co m b in atio n s of The juPD4264800 and p/PD4265800 are 64M-bit dynam ic RAMs organized a s 8,388,608 words by 8 bits. They are

Contextual Info: PRELIM INARY DATA SHEET M OS INTEG RATED CIRCUIT NEC juPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /JPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD4264400,4265400 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low pow er consum ption.

1T06-5

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC juPD4264805,4265805 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, HYPER PAGE MODE Description The fiPD4264805,4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: • •’er c m JUPD4264400, 4265400 16,777,216 X 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Preliminary S eptem ber 1993 Description RAS-only refreshing and 4096 address com binations of Ao - A ^ to perform CAS before RAS and hidden refresh­ ing of the mem ory during a 64-ms period. The

toco

Contextual Info: PRELIMINARY DATA SHEET i n j e c MOS INTEGRATED CIRCUIT : juPD4264805, 426 5805 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, HYPER PAGE MODE Description The fxPD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynam ic RAMs w ith optional hyper page mode. Hyper page m ode is a kind o f page m ode and is useful fo r th e read operation.

83CL-8867A

Contextual Info: JTV "* JL W NEC Electronics Inc. Pin Identification The juPD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes silicon area and pro­

axn 4

Abstract: UPD428
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD4264805, 42S65805, 4265805 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO D e s c rip tio n T he ,uPD4264805. 42S65805, 4265805 are 8,388,608 w ords by 8 bits CMOS dynam ic RAMs w ith optional EDO. EDO is a kind of the page mode and is useful fo r the read operation.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264805, 4265805 64 M-BIT DYNAMIC RAM 8M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /iPD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 4264160, 4265160 64 M BIT DYNAMIC RAM 4M -W O R D BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 2 6 4 16 0 , 4 2 6 5 16 0 64 M-BIT DYNAMIC RAM 4M -W O RD BY 16-BIT, FAST PAGE MODE Description The /iP D 426 416 0,4265160 are 4,194,304 words by 16 bits dynamic C MOS RAMs. The fast page mode capability

d42s65405g5

Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿PD42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿PD42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4264800, 4265800 64 M BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD4264800, 426580Q are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

uPD4265160

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

iaa 180

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 426 416 0 , 4 2 6 5 16 0 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D e s c rip tio n ThefiP D 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability

NEC c

Contextual Info: Part Number 64M DRAM 1 x 4 / x 8 /¿PD4264 4 00L E - A 70 NEC CMOS Dynamic RAM —^ 64M Dynamic RAM, Refresh Cycle — 6 4 : 8K Refresh 65 : 4K Refresh O :x 4 8 : x8 Fast Page M o d : TSOP (II)(400mil)

u729

Abstract: D42644
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JU PD 426 4 40 0 , 4 2 6 5 4 0 0 64M -BIT DYNAMIC RAM 16 M-WORD BY 4-BIT FAST PAGE MODE D es c rip tio n The /iPD426440Q, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: NEC yPD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Description Pin Identification The ¿/PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced