PD4264 Search Results

83TL-7E07A

Abstract: 42644LA-80L
Contextual Info: SEC PD42644 1,048,576 X 4-Bit Silicon File NEC Electronics Inc. Description Pin Configurations The £/PD42644 is a fast-page, low-power dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µ PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

168pin dram socket

Contextual Info: Part Number 64M DRAM U PD4264 4 00 LE - A 70 NEC CMOS Dynamic RAM— 64M Dynamic RAM, Refresh Cycle — 64: 8K Refresh 65 : 4K Refresh :x 4 8 :x 8 Fast Page M : TSOP II (400mil)

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The ^PD4264800, 4265800 are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

PD4265805

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264805, 4265805 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The µ PD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

Contextual Info: NEC PD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Description Pin Identification The ¿/PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE Description The µ PD4264160, 4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

D4264400

Abstract: D42644
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability

NEC uPD

Abstract: 4264405 D42S65405
Contextual Info: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /¿ P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s b y 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility

Contextual Info: PD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Prelim inary Information Pin Identification Description The /j PD42641 is a fast-page, low-power dynam ic RAM o rganized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt power supply. Advanced

0829A

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿ PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ^P D 4 2 6 4 4 0 0 ,4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: N E C ELECTRONICS INC b>4E i WÊ b M E 7 S E S 0030^3=1 3b3 « N E C E ¿/PD4264800, 4265800 8,388,608 X 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Preliminary S e p tem b e r 1993 Description The /PD4264800 and /JPD4265800 are 64M-bit dynam ic RAM s organized as 8,388,608 w ords by 8 bits. They are

PD4264800

Abstract: PD4265800
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-428LFH641 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-428LFH641 is a 8,388,608 words by 64 bits dynamic RAM module on which 8 pieces of 64M DRAM :

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM :

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-428LFH641 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-428LFH641 is a 8,388,608 words by 64 bits dynam ic RAM module on which 8 pieces of 64M DRAM :

4265165

Abstract: 4265165G5 PD4264165 pd4265165
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The µPD4264165, 4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

PD4264800

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD4264800, 4265800 are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

UPD4265160-A60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264805, 4265805 64 M-BIT DYNAMIC RAM 8M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /PD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

PD4264800

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD4264800, 4265800 64M -B IT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The iiPD 4264800, 4265800 are 8,388,608 w ords by 8 bits dynam ic CMOS RAMs. The fast page mode capability