JUNCTION MODULES Search Results

cherry DB1

Abstract: TJSE20705 mil-t-81714 TJE120810 diode TJE120810 Mil T 81714 TJS322700 TJE120999 2db3 MIL-t-81714 Series II
Contextual Info: Terminal Junction Systems MIL-T-81714 Series I Class D MIL-T-81714 Series I Junction Modules QPL-approved MIL-T-81714 modules and MIL-C-39029/1 contacts are available in four standard sizes accommodating 12-26 AWG wires in both feedback and feedthru types with full a selection of bussing arrangements. The complete MIL-T-81714 Series I Terminal Junction System

M81714

Abstract: MIL-T-81714 TJT702002 TJT701020 TJT703010 TJT703004 TJT701002 TJT703002 M81714/63-12F
Contextual Info: Terminal Junction Modules Feedback Track Dimensions M81714/5, /10, /16 Series I Terminal Junction Module Mounting Tracks Operating Range Product Description Temperature: -65º to 200ºC Corrosion: No Exposure of Base Metal After 48 Hours of Salt Spray Magnetic Permeability:

Contextual Info: < IGBT MODULES > CM900DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 900A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM150RXL-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 150A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM1000DUC-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 1 0 0 0 A Collector-emitter voltage VCES .… 1 7 0 0 V Maximum junction temperature T j m a x .

nsa937901

Abstract: NSA937901M2202 nas 1749 EN3155 Cross Reference en3155 m39029 EN3155-016M2018 NSA937901M2206 NSA937901M1202 001104 203 02 mil spec M81714
Contextual Info: Modules de distribution à jonction rapide Quick junction modules Edition 05/12 Amphenol Air LB SYSTEMES DE CONNEXIONS ELECTRIQUES ET ELECTRONIQUES ELECTRIC AND ELECTRONIC CONNECTION SYSTEMS SOMMAIRE TABLE OF CONTENTS MODULES TYPE 1750 & DERIVES 4 MODULES 1750 SERIES & DERIVED

SCHOTKY

Abstract: 6RI30E 100X2 2RI100E 2RI60E 6RI100E 6RI100G 6RI30G 6RI50E 6RI75E
Contextual Info: Diode Modules Ratings and Characteristics Type Schematic Diagram — 3 Phase Diode Bridge Rectifier Diode Module 6 Chips in Bridge Insulated Type Part Number o O- Rated Current Surge Current Junction Temp. Insulation Voltage Forward Voltage V (A) (A)

Junction Modules

Abstract: Amphenol 2db3 TJM120701 TJM120702 TJM120708 TJM120706 2DC3 TJM220708 TJM220705
Contextual Info: M81714/2, /7 Series I Size 20 Class D Terminal Junction Modules Operating Range Materials Temperature: -65ºC to 200ºC Insulation Resistance: 5000 Megaohms @ 25ºC Dielectric Withstanding Voltage: 1500 VRMS at Sea Level 200 VRMS at 100,000 ft. Current Rating

Junction Modules

Abstract: Amphenol MIL-T-81714 SJM020300 Amphenol 6020 SJM020400 SJM020600 M81714 SJM020100 602002
Contextual Info: M81714/60-20 Series II Size 20 Socket Junction Modules Operating Range Materials Temperature: -65ºC to 200ºC Insulation Resistance: 5000 Megaohms @ 25ºC Dielectric Withstanding Voltage: 1500 VRMS at Sea Level 200 VRMS at 110,000 ft. Current Rating 7.5 Amps

vs-ufb130fa40

Contextual Info: VS-UFB130FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB230FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 230 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB280FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB130FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB130FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFL80FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB80FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB80FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB80FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

Contextual Info: VS-UFB80FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C

VS-UFB280FA20

Contextual Info: VS-UFB280FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C • Low forward voltage drop

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

APT0406

Abstract: APT0501 APT0502 APTC60HM70SCTG
Contextual Info: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

APT0406

Abstract: APT0501 APT0502 APTC80H29SCTG DIODE S4 75a 75AVGS
Contextual Info: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC60HM24T3G VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Full bridge Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features