heat sink design guide, IGBT
Abstract: air cooled heatsink AN4505 AN4505-5 heatsink EM HEATSINK PROFILE Dynex Semiconductor
Contextual Info: AN4505 Heatsink Issues For IGBT Modules Application Note AN4505-5.2 April 2007 LN 25345 The maximum permissible junction temperature Tjmax of an IGBT is fixed and a suitable heatsink must be selected to keep the junction temperature (Tj) below this maximum.
|
Original
|
an4505an4505-5heat sink design guide, igbtair cooled heatsink+3heatsinkem heatsink profiledynex semiconductor
|
PDF
|
RHODORSIL
Abstract: unial BICC BX13 AN4505 AN4505-5 RHODORSIL COMPOUND 5 oil bicc
Contextual Info: AN4505 Application Note AN4505 Heatsink Issues For IGBT Modules Application Note Replaces March 2001 version, AN4505-5.0 AN4505-5.1 July 2002 The maximum permissible junction temperature Tjmax of an IGBT is fixed and a suitable heatsink must be selected to keep
|
Original
|
an4505an4505-5rhodorsilunial+4biccbx13rhodorsil compound 5oil bicc
|
PDF
|
Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
|
Original
|
ds5766-4tag 225-600igbt cross-referencescr gto+7fast diode 3000vtag 200-600522.500. 5 x 20 mmhvdc plusscr phase control battery chargeresm 30 450 vgto thyristor application notes
|
PDF
|
GP800
Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Contextual Info: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
|
Original
|
gp800dcs18ds5221-4ds5221-5gp800+5an4508an4502an4503an4505dc chopper circuit application
|
PDF
|
GP801DCM18
Abstract: AN4502 AN4503 AN4505 AN4506
Contextual Info: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
|
Original
|
gp801dcm18ds5365-3an4502an4503+2an4505an4506
|
PDF
|
AN4502
Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
|
Original
|
gp401lss18ds5288-1an4502an4503+2dsa0018823ups sine wave inverter circuit diagram
|
PDF
|
AN4502
Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001
|
Original
|
gp2401esm18ds5345-1ds5345-2an4502+3an4503an45053,3 kw high frequency transistor module
|
PDF
|
AN4502
Abstract: AN4503 AN4505 AN4506 GP800DCM18
Contextual Info: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
|
Original
|
gp800dcm18ds5363-3an1800van4502+3an4503an4505an4506
|
PDF
|
AN4502
Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS
|
Original
|
gp200mlk12gp200mks12ds5448-1an4502+5an4503gp200mls12igbt 200a 1200v application induction heatingdiode 10v 10maan5190
|
PDF
|
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
|
Original
|
ds5766-4kpb 307kp8 500kp9 1500 -12+7kpd 1500 tegkp5-600 thyristorkp8 800igbt types 6000vkp7 500tba 1240 icteg thyristor
|
PDF
|
AN4502
Abstract: AN4503 AN4505 AN4506 GP2400ESM18
Contextual Info: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)
|
Original
|
gp2400esm18ds5406-1an4502an4503+2an4505an4506
|
PDF
|
AN4502
Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
Contextual Info: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001
|
Original
|
gp800nss33ds5358-2an4502an4503+5an4505an4506an5167440nfds-5358
|
PDF
|
DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
|
Original
|
4500veeds5766-4dcr370tdcr370t18+8dcr1560f26dcr1560fdrd2960y40alsic 105dcr1710f18dcr650g34dcr2760vdrd850d34
|
PDF
|
DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
|
Original
|
ds5766-4dcr2950wk1457tag 225-600+7dim1200fss12thyratronigbt cross-referencedcr890fdsf110igbt types 6000vdim800dcs12-a
|
PDF
|
|
|
K1p TRANSISTOR
Abstract: AN4502 AN4503 AN4505 GP1600FSM18
Contextual Info: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001
|
Original
|
gp1600fsm18ds5361-1ds5361-2k1p transistor+3an4502an4503an4505
|
PDF
|
AN4502
Abstract: AN4503 AN4505 AN4506 GP400DDS18
Contextual Info: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)
|
Original
|
gp400dds18ds5359-2an4502an4503+2an4505an4506
|
PDF
|
AN4505
Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Contextual Info: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
|
Original
|
gp800ddm18ds5364-2ds5364-33300y+4an4505an4502an450312v dc sine wave inverters circuit diagram
|
PDF
|
AN4502
Abstract: AN4503 AN4505 GP800FSS18
Contextual Info: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
|
Original
|
gp800fss18ds5261-2ds5261-3an4502+2an4503an4505
|
PDF
|
BJT 2222
Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit Si321x 2N2222 bjt IBJT W6 13A Diode PC40EF12 IRLL014N equivalent
Contextual Info: AN45 DESIGN GUIDE Si3210/15/16 DC-DC CONVERTER FOR THE Introduction The ProSLIC from Silicon Laboratories integrates a complete analog telephone interface into one low-voltage CMOS device and offers extensive software programmability to meet many global telephony
|
Original
|
si3210/15/16si321xbjt 2222npn bjt 2n2222+7bjt 2n2222 datasheetbjt 2n2222 driver circuit2n2222 bjtibjtw6 13a diodepc40ef12irll014n equivalent
|
PDF
|
BX13
Abstract: copper bus bar torque RHODORSIL COMPOUND 5 busbar bolt torque value oil bicc RHODORSIL COMPOUND 7
Contextual Info: device clam ping and m odule m ounting D isc D evice C la m p in g R e c o m m e n d a tio n s The Forward Voltage Drop and Thermal Resistance of a disc hockey puck semiconductor is affected by the clamping force that is applied to the device. This is because, unlike stud type
|
OCR Scan
|
130x140mm190x140mman4505bx13+5copper bus bar torquerhodorsil compound 5busbar bolt torque valueoil biccrhodorsil compound 7
|
PDF
|
DS5402-1
Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
Contextual Info: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
|
Original
|
gp800fsm18ds5402-1an4502an4503+2an4505an4506
|
PDF
|
AN4502
Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
Contextual Info: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001
|
Original
|
gp1601fss18ds5248-3ds5248-4an4502+2an4503an4505
|
PDF
|
AN5190
Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Contextual Info: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ
|
Original
|
gp200mhs12gp200mhb12sds4339-5ds5296-1+4an5190an4502an4503an4508
|
PDF
|
DS5401-1
Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
Contextual Info: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
|
Original
|
gp801fsm18ds5401-1basic single phase ac motor reverse forwardan4502+4an4503an4505an4506ds5401
|
PDF
|