JUNCTION Search Results

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)

str f 6454

Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
Contextual Info: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453

2SD1433

Contextual Info: 2SD1433 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage : V^go=1500V . Low Saturation Voltage : vCE sat =5V (Max.) (IC=6A, Ib =1.2A) . High Speed : tf=1.0/js (Max.) . Glass Passivated Collector-Base Junction

TIS69

Abstract: TIS70 tis70 texas instruments
Contextual Info: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit

2n5549

Contextual Info: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit

2N3147

Abstract: 2N3146 Texas Germanium Germanium power
Contextual Info: TYPES 2N3146, 2N3147 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS S 5 £m HIGH-VOLTAGE HIGH-POWER TRANSISTORS for w V» z M Z z P ft z “ MILITARY AND INDUSTRIAL APPLICATIONS m ech a n ica l d a ta S » I- These tran sistors a re in precisio n w e ld e d , h e rm e tic a lly s e a le d en closures. The m ounting b a s e p ro v id e s an

2n3820 transistor

Abstract: TIC 106b 2n3820
Contextual Info: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a

2SK161

Abstract: 2SK161GR vI652
Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

4328T

Contextual Info: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit

2N335

Contextual Info: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly

1SS239

Contextual Info: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125

2N117

Abstract: 2n117 texas
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

2n3972

Abstract: transistor 2N3972
Contextual Info: TYPES 2N3970 THRU 2N3972 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L - S 7 31 1 9 1 3 . M A R C H 1973 S Y M M E T R IC A L N-C H A N N EL F IE L D -E F F E C T TRAN SISTO RS FOR HIGH-SPEED C O M M U TA TO R A N D CHOPPER APPLICATIO N S

S6370

Contextual Info: S6370 THYRISTOR SILICON DIFFUSED JUNCTION Unit in mm LOW POWER SWITCHING APPLICATIONS STROBO TRIGGER 0 5 . 1 MAX. • Repetitive Peak Off-State Voltage VDRM=400V • Repetitive Peak Reverse Voltage Vr r m =4° o v • Fast Turn On Time tgt= l .5 jjs I 1

2SD1430

Contextual Info: 2SD1430 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATU RES: . High Voltage : VCB0=1500V . Low Saturation Voltage : V C E sat =4V (Typ.) (XC=3A, IB=0.8A) . High Speed : tf=1.0*is (Max.) (IcP=3A, Ijji (end)= 0. 8A) . Glass Passivated Collector-Base Junction

2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Contextual Info: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)

Contextual Info: TY P ES TID 777, TID778 S ILIC O N SW ITCHING D IO D ES B U L L E T IN N O . D L -S 7 3 1 1 7 4 5 , J A N U A R Y 1 9 7 3 VERY-HIGH-SPEED SWITCHING DIODES • Pico-Second Switching Times • Small-Size, Double-Plug Construction • Very Low Junction Capacitance

Contextual Info: SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK TELCOMMUNICATION APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r h =400V . Average Forward Current : Io=0.5A Ta=47°C . Dual in Line Type. . Plastic Mold Package. . Low Loss Type. POLARITY + o H o o

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1R5DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage VRRM=200V Average Forward Current F (AV) =1.5A (Ta=25°C) 35ns (Max.) Very Fast Reverse-Recovery Time v^o .g sv

S2055AF equivalent

Abstract: S2055af s2055af 4 C5C5 s2055af circuit lf5a
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2055AF COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage V CES=1500V . Low Saturation Voltage v CE sat =lV(Max.) . High Speed tf=0.7i;s(Typ.) . Built-in Damper Type . Glass Passivated Base-Collector Junction

2SD1543

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1543 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage . Low Saturation Voltage: . High Speed ia5±Cl5 ,03.6±a3 : V ;b o = 1500V 3.0ÍCL3 VcE(sat =4V(Typ.) : tf=0.5iis(Typ. ) . Glass Passivated Collector-Base Junction.

1SS TRANSISTOR

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J U n it in mm HIGH FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A TIO N S. A U D IO FREQUENCY A M P LIFIER APP LIC A TIO N S. M A X IM U M R ATINGS Ta = 25°C

2N3330

Abstract: 2N3332 2N3331 2n3329
Contextual Info: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS