JUL2008 Search Results

Contextual Info: T H I5 D R A W IN G IS U N P U B L I S H E D . COPYRIGHT 19 RELEASED BY AMP INCORPORATED. FOR ALL LOC PUBLICATION RIGHTS RESERVED. REV I S IONS D IST DY LTR DATE DESCRIPTION ;JUL2008 NPR PER E C R - 08 - 0 I4 3 0 5 DWN A PV D S YJ LSF NOTES m □ — H HRnRnRRnRnRRnRnRRnRnHHHHHHHHHHHHHHHHHHHH

Contextual Info: TH I S D R AW I NG IS UNPUBLI SHED. C O P Y R I G H T 20 RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL 20 PUBLICATION RIGHTS LOC D I ST R E V LTR IO N S DESCRIPTION Al & RELEASED I2 N O V 2 00 7 S. REVISED 0 9 JUL2008 s. REVISED 0 I OC T 2 0 0 9 T.S

SBF2060CT

Abstract: 2060CT
Contextual Info: SBF2050CT thru 2060CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 20 Amperes FEATURES ITO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS EP6KE SERIES REVERSE VOLTAGE - 6.8 to 20 Volts POWER DISSIPATION - 600 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

Contextual Info: B520C thru B540C REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 5.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted applications SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

PAD105

Contextual Info: B240LA SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – FORWARD CURRENT – 40 Volts 2.0 Amperes FEATURES • For surface mounted applications SMA • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

Contextual Info: L30ESDL5V0C3-1 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-1 is a dual voltage suppressor designed to protect components which are connected to data and

Contextual Info: TH I S D R A W I NG IS UNPUBL ISH E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION, FOR PUBLICATION ALL RIGHTS LOC D I ST REV I S I O N S RESERVED. D E S C R I P T I ON MATER 94 D ARE REV PER ECR-07-00026 2MAR2007 DHR DHR REMOVED L O G O S ON V I E W S

Contextual Info: T H 1S DRAW 1NG G I S U N P U B L 1S H E D . C O P Y R 1GHT 20 R E L E A SE D BY TYCO ELECTRON ICS C O RP O RA T I O N FOR P U B L I C A T I O N ALL RIGHTS 20 LOC D I ST REVISIONS R E SE RV ED. P LTR D E S C R 1P T 1ON R E V I S E D PER E C O - 0 8 - 0 0 9 5 9 9

26po

Contextual Info: TH I S DRAW I NG IS COPYRIGHT UNPUBLI SHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL PUBLICATION RIGHTS 20 L OC REV I S IONS D I ST RESERVED. LTR REVISED A D DITION PART REVISED A D DITION PART BI . 65 Cl C 3 . 3± 0 . 0 5 — 2 . 65REF ECR-05-009757

SBF1060CT

Abstract: sbf1060 1060CT
Contextual Info: SBF1050CT thru 1060CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 10 Amperes FEATURES ITO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

smd wb5

Abstract: marking wb5
Contextual Info: LITE-ON SEMICONDUCTOR L35ESD5V0CB2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 350 WATTS BIDIRECTIONAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOD323 Electro Static Discharge ESD protection diodes in ultra small SMD Plastic packages designed to protect one signal line from the

SBL2045CT

Contextual Info: SBL2030CT thru 2045CT REVERSE VOLTAGE – 30 to 45 Volts FORWARD CURRENT – 20 Amperes SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

B340

Abstract: B320 B330 cj230
Contextual Info: B320 thru B340 REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 3.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted application SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

KBJ2008

Abstract: KBJ2008G 2520B
Contextual Info: LITE-ON SEMICONDUCTOR KBJ2004G thru KBJ2008G REVERSE VOLTAGE - 400 to 800 Volts FORWARD CURRENT - 20 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 800V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

SB150

Abstract: SB160
Contextual Info: SB150 thru SB160 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 1.0 Amperes FEATURES DO-41 • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability

marking wb5

Abstract: 25KVp smd wb5
Contextual Info: LITE-ON SEMICONDUCTOR L35ESD5V0CB2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 350 WATTS BIDIRECTIONAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOD323 Electro Static Discharge ESD protection diodes in ultra small SMD Plastic packages designed to protect one signal line from

Infrared object counter circuit

Abstract: object counter circuit Infrared object counter component automatic door infrared sensor application object counter circuit ir water level sensor optical object counter circuit MLX75304 automatic door opening sensor ticking
Contextual Info: Application Note Hand Detection, Break-a-Beam Detection with MLX75303 SensorEyeC Scope Hand Detection is gaining popularity in a lot of consumer applications like water taps, flushing toilets, hand dryers, touchless switches for home appliances, opening doors, etc.

Contextual Info: TH I S D R AW I NG IS U N PU B LI SHED. C O P Y R I G H T 2 0 08 RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL PUBLICATION RIGHTS 2008 L OC D I ST REV I S I ONS RESERVED. LTR P/N 5 - 2 9 3 1 7 2 - 1 R E V . A A S S HOWN ( S T A N D A R D V E R S I O N ; T R A N S P A R E N T , NO C O L O U R )

L30ESDL5V0

Abstract: L30E
Contextual Info: L30ESDL5V0C3-1 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-1 is a dual voltage suppressor designed to protect components which are connected to data and

3060PT

Abstract: SBL3050PT SBL3060PT
Contextual Info: SBL3050PT thru 3060PT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 30 Amperes FEATURES TO-3P • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

MBRF845

Contextual Info: LITE-ON SEMICONDUCTOR MBRF845 REVERSE VOLTAGE - 45 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AC FEATURES B M DIM. A B C D A C K PIN 1 2 E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection

SBL2045CT

Abstract: 2045CT SBL2030CT SBL2035CT SBL2040CT
Contextual Info: SBL2030CT thru 2045CT REVERSE VOLTAGE – 30 to 45 Volts FORWARD CURRENT – 20 Amperes SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

B350

Abstract: B360
Contextual Info: B350 thru B360 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 3.0 Amperes FEATURES • For surface mounted application SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop