JUPD434001 Search Results

Contextual Info: fiPD434001 4,194,304 X 1-Bit Static CMOS RAM W NEC Electronics Inc. Description Pin Configuration The /j PD434001 is a 4,194,304-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A unique design with CMOS peripheral circuits and N-channel memory cells, the juPD434001 is a high­

D434001

Abstract: D434001ALG5
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434001 AL 4M -BIT CMOS FAST SRAM 4M-W ORD BY 1-BIT Description The /¿PD434001AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

D434001

Abstract: D4340
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434001 A 4M -BIT CMOS FAST SRAM 4M-W ORD BY 1-BIT Description The /¿PD434001A is a high speed, low power, 4,194,304 bits 4,194,304 w ords by 1 bit CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: Iff IB 1992 SEC NEC Electronics Inc. fiPD434001 4,194,304 X 1-Bit Static CMOS RAM Preliminary Information September 1992 Description Pin Configuration The pPD434001 is a 4,194,304-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A