JSS 62 Search Results

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

BAS 20 SOT23

Abstract: DIODE BAS 21 sot-23 JSs
Contextual Info: BAS 19 . BAS 21 Silicon Switching Diodes 3
High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C

Contextual Info: Non-polarized,height 5mm N O N P O LA R IZ ED , H E IG H T 5 M M SERIES II IS 5 M M & i i t i p no • Non-polarized and low profile series with 5m m heighc ■ Uniquely designed for use in lightweight and portable equipment SPECIFICATIONS K t i * Item JSS

JSs 57

Contextual Info: February 1997 Revision 1.0 data sheet ESA2UN3282 A -(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282(A)-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3282(A) supports 2K refresh.

OEN relays

Abstract: led free 68-24-2AE diode DIN 12VDC30A 192 1C 12 single pole 24 vdc 110vac BSP 280 112502 JSs diode
Contextual Info: CLASSIFICATION MODEL UNIT STYLE DIMENSION WEIGHT II SIGNAL RELAYS 42 46 52 56 PC PC PC DIP PC DIP 20 x 7.2 x 7.5 20.5x12x16 15.5x11 gms X 11.5 20.2x9.9x12 HERMETICALLY SEALED RELAYS SIGNAL RELAYS 3.5 77 36 PC POWER RELAYS 30 43 61 65 PC/Solder Hook/Plug in

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

11B31A

Abstract: FA S72 EIA-310
Contextual Info: HB MAIES ORIGNAL □ATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TD TROMPETER ELECTRONICS INC, AND SHALL NDT BE DISCLOSED, COPIED DR USED FDR PROCUREMENT OH MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. REV REVISIONS DESCRIPTION -1 WAS BASIC; ADDED -2j

74366

Abstract: 74LS366 8T96
Contextual Info: - 2 1 I - Hex 3-State Bus Inverters 7 43 66 8T96 Q 8 T 9 6 [ i P N P a. )1 o 7 4 3 6 6 1 1 Y i t i f l II V c c t G N D | : ? 7 > V iin in iriA T liJ liiliJ lL r 4 > £ - r > G i o r Gz Gi . G i £ Y = A CONTROL SECTION • TOOTHER DRIV ERS 1 0 F 6 0 R IV E R S

ESA2UN3241-60JS-S

Abstract: 1MX4
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3241- 60/70 JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

1Mx4 dram simm

Abstract: 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3241A- 60/70 JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241A-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

t85 5e4

Abstract: BZ-2RW82212T 2660I 9351-D
Contextual Info: CATALOS LISTING MICRO SWITCH B Z-2RW 82212T SWITCH - BASIC A DlVfttM Of M inW CUS^M fYV Hl KKtfUTOt mm F E O , M F R . COOE 9 1 9 2 9 H * CM evi .3 8 0 ± .0 3 0 CM GO .37 D IA X .2 5 W IDE H A R D E N ED STEEL RO LLER cr CM IMv i m ça m2 oZ|U * I.2 6 6 ± .0 I5

2SK2528-01

Abstract: LFT 5A
Contextual Info: FU JI 2SK2528-01 N-channel MOS-FET ö ü J M e ir u ö L J K FAP-II Series 900V 3 ,6 Q 5A 80W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications

2SK150

Abstract: 2sk1508
Contextual Info: FU JI 2SK1508 N-channel MOS-FET F -lll S e rie s 60V 35 A 60W > Outline Drawing > Features - 0,035£2 High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier

Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON [MOigœilLiera *® STW80N06-10 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss R dS oii Id STW 80N06-1 0 60 V < 0 .010 a. 80 A • . . . . . . . TYPICAL RDS(on) = 0.0085 £1 AVALANCHE RUGGED TECHNOLOGY

International Rectifier IRF520

Contextual Info: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

schematic diagram UPS

Abstract: STP12NR20 STP12NR20FI
Contextual Info: SGS-THOMSON [MOigœilLiera *® STP12NR20 STP12NR20FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP12NR20 S TP12N R20FI • . . . . V dss R d S o ii Id 200 V 200 V < 0 .3 Q. < 0 .3 il 12 A 7 A TYPICAL RDS(on) = 0.23 £1

Contextual Info: STB5NB80 N - CHANNEL 800V - 1 ,8H - 5A - D^PAK PowerMESH MOSFET TYPE S TB5N B80 • . . . . . V d ss R d S o ii Id 800 V < 2.2 Q. 5 A TYPICAL RDS(on) = 1 -8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: SMP10N20-400 Siliconix N-Channel 200-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY V (BR)DSS (V ) r 200 •d (A) DS(ON) (-2) 10 0.4 @ VGS = 10 V D TO-220AB Q o DRAIN connected to TAB Ò G D S s Top View N-Channel M O SFET A B S O L U T E M A X IM U M R A TIN G S (T c

Contextual Info: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: £ f7 SGS-THOMSON » r a m ie « STU 36 N B 20 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU36NB20 . . . . . . V dss RDS on Id 200 V < 0 .0 6 5 Q. 36 A TYPICAL RDs(on) = 0.052 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

IRF620

Abstract: 7n20 TI74 IRF220 IRF620-623 MTP7N20 IRF221 IRF222 IRF621 IRF622
Contextual Info: FAIRCHILD SEMICONDUCTOR • ■ n H £ £ £ H ~ Û4 n iM £ ¡ ¡ ¡ ¿ DE | 3MLTb7M □□27Ô7M 5 IR F 2 2 0 -2 2 3 /IR F 6 2 0 -6 2 3 5 M T P 7 N 1 8 /7 N 2 0 A Schlumberger Company N -C h a n n e l T P o w e r 7 A , 1 5 0 -2 0 0 V Power And Discrete Division

TIC 136 Transistor

Contextual Info: 1 0 SGS- H M S N [M O ig œ ilL ie ra *® 8 STU NA 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STU8NA80 V dss R dS oii Id 800 V < 1 .0 fl 8.3 A • TYPICAL RDS(on) = 0.85 £1 . EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP