JQ 8 Search Results

Contextual Info: Bare Miniature Speaker Bare Miniature Mylar Speaker Part Number Impedance Ohms PSR-13N08A-JQ PSR-18N08A-JQ PSR-20N08A-JQ PSR-28N08A-JQ PSR-36N08A-JQ PSR-40N08A05-JQ PSR-45N08A-JQ PSR-57N08A01-JQ 8 8 8 8 8 8 8 8 PSR-11N08S-JQ PSR-20F08S-JQ PSR-23F08S-JQ

PSR-45N08A-JQ

Abstract: PSR-20N08A-JQ 11N08 PSR-20F08S-JQ 57n08 40n08 20n08
Contextual Info: MALLORY SONALERT PRODUCTS, INC. . NEW Miniature Speaker Series Suitable for Consumer, Industrial, Medical & Transportation Applications KEY FEATURES: • • • • • Speaker Part Number PSR-13N08A-JQ PSR-18N08A-JQ PSR-20N08A-JQ PSR-28N08A-JQ PSR-36N08A-JQ

Contextual Info: intel 8XC196KR/KQ/JR/JQ COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196K R /K Q /JR /JQ — 16 Kbytes of On-Chip OTPROM 80C196KR/KQ /JR/JQ —ROMIess • High Performance CHMOS 16-Bit CPU ■ 16 MHz Operating Frequency ■ High-Speed Peripheral Transaction

80C196KR

Abstract: N80C196JQ 196KR 80C196KC XLXX TN80C196KR 80C196K TN80C 270912 intel packaging handbook 240800 80c
Contextual Info: in te i 8XC196KR/KQ/JR/JQ COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C 196K R /K Q /JR /JQ — 16 Kbytes of On-Chip OTPROM 80C 196K R /K Q /JR /JQ — ROMIess High Perform ance CHMOS 16-Bit CPU 16 MHz Operating Frequency High-Speed Peripheral Transaction Server PTS

80C196KR

Abstract: 8xc196 programming support 8XC196KR 8XC196 instruction set 80C196kr instruction set N87C196KR intel 80c196 INSTRUCTION SET N80C196KR n80c196 270912
Contextual Info: A E M Ä M ! OMF©KGSiflÄYO [iO in te l 6XC196KR/KQ/JR/JQ COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KR/KQ/JR/JQ—16 Kbytes of On-Chip OTPROM 80C196KR/KQ/JR/JQ—ROMIess High Performance CHMOS 16-Bit CPU 16 MHz Operating Frequency Up to 488 Bytes of On-Chip Register

80C196KR

Contextual Info: A I W A M ! O K lF O ^ R ifl T D ^ in te l 8XC196KR/KQ/JR/JQ COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KR/KQ/JR/JQ— 16 Kbytes of On-Chip OTPROM 80C196KR/KQ/JR/JQ—ROMIess High Performance CHMOS 16-Bit CPU 16 MHz Operating Frequency High-Speed Peripheral Transaction

Contextual Info: Product Selector Table Gates Device Pkg.C A1010A PL PL PQ PG A1020A # Pins Speed Option*2) Temp.<3> 44 68 100 84 Std. Std. Std. Std. -1, -2 -1 , - 2 -1 , -2 -1 C, C, C. C, PL PL PL PQ CQ JQ JQ JQ PG 44 68 84 100 84 44 68 84 84 Std. Std. Std, Std, Std, Std.

ADS-15

Abstract: 80C196Kc 80C196KR 8XC196 8XC196 instruction set 8XC196KR mcs 96 programming 02018H 80C196kr instruction set 8XC196 package
Contextual Info: intel 8XC196KR/KQ/JR/JQ COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KR/KQ/JR/JO—16 Kbytes of On-Chip OTPROM 80C196KR/KQ/JR/JQ—ROMIeea • High Performance CHMOS 16-8tt CPU ■ 16 MHz Operating Frequency High-Speed Peripheral Transaction Server PTS

Contextual Info: 7 8 RoHS COMPLIANT o ^ JQ □ TO □ f B D □ D D D Q D D D D B JQ □ 10 □ JQ Q # 1i"/ 10Px28AWG 1,27 pitch twisted pair fla t cable Cl SEK 20P fenale connector SEK 20P fenale connector f l f l TOLERANCE FOR "L" LENGTH D L e n g th -L P a r t-N o . 33 18 243 150 0068

E1751E20

Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features

JQ1-12V-F

Abstract: JQ1P-24V-F ASCTB185E JQ1a-24V-F JQ1aP-12V-F JQ1-48V-F JQ1a-5V-F 24V 5A VDE RELAY 817138
Contextual Info: JQ VDE 1a/1c 5A/10A small power relays RoHS compliant JQ RELAYS FEATURES TYPICAL APPLICATIONS • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c) • High surge voltage: 8,000 V between

JQ1A-12V

Abstract: JQ1-12V JQ1P-12V JQ1-18V JQ1-24V JQ1-48V JQ1P-18V JQ1P-24V JQ1P-48V JQ1P-5V
Contextual Info: JQ VDE HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY FEATURES 10 .394 20 .787 JQ RELAYS • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c) • High surge voltage: 8,000 V between contacts and coil

JQ1aP-12V

Contextual Info: JQ HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY JQ-RELAYS UL File No.: E43028 CSA File No.: LR26550 •High 1 High >High ' High electrical noise immunity switching capacity in a compact package sensitivity: 200 mW 1a , 400 mW (1c) surge voltage: 8,000 V between contacts and coil

JQ1a-24V-F

Abstract: JQ1-12V-F JQ1-18V-F JQ1-24V-F JQ1-48V-F JQ1P-12V-F JQ1P-18V-F JQ1P-24V-F JQ1P-48V-F JQ1AP-12V-F
Contextual Info: VDE HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 20 .787 JQ JQ RELAYS FEATURES 10 .394 15.6 .614 mm inch • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c) • High surge voltage: 8,000 V between

JQ1-12V-F

Abstract: Matsua relay JQ1 Matsushita relay JQ1 JQ1P-24V-F JQ1-18V-F JQ1-24V-F JQ1-48V-F JQ1P-12V-F JQ1P-18V-F JQ1P-48V-F
Contextual Info: VDE HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 20 .787 JQ JQ RELAYS FEATURES 10 .394 15.6 .614 mm inch • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c) • High surge voltage: 8,000 V between

j2108

Abstract: EDJ2116DEBG-JQ EDJ2108DEBG-JQ EDJ2108DEBG EDJ2116DEBG DDR3-1866L persistent write 96-ball FBGA Elpida DDR3 DDR3 2G 1866 elpida
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization:  32M words × 8 bits × 8 banks (EDJ2108DEBG)  16M words × 16 bits × 8 banks (EDJ2116DEBG)

faders

Contextual Info: Slide Potentiometers/EVA B JQ/EVA(B)NA Thin-type Faders for Audio Mixers Series: Japan EVA(B)JQ/EVA(B)NA • Features ● Thin and compact design with 8 mm body height and 15 mm width ● Light sliding force and excellent operability ● Highly accurate attenuation characteristics, maximum

JQ1P-24V-F

Abstract: JQ1-12 JQ1A-12V-F
Contextual Info: VDE HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 20 .787 JQ JQ RELAYS FEATURES 10 .394 15.6 .614 mm inch • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c) • High surge voltage: 8,000 V between

JQ1P-24V-F

Abstract: JQ1-12V-F JQ1a-24V-F JQ1a-5V-F JQ1aP-12V-F JQ1P-6V-F JQ1aP-18V-F JQ1aP-24V JQ1-18V-F JQ1-24V-F
Contextual Info: VDE HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 20 .787 JQ RELAYS FEATURES 10 .394 15.6 .614 mm inch JQ About Cd-free contacts We have introduced cadmium-free type products to reduce environmentally hazardous substances. Please replace parts that contain cadmium with Cd-free

JQ1-12V-F

Abstract: JQ1-18V-F JQ1-24V-F JQ1-48V-F JQ1P-12V-F JQ1P-18V-F JQ1P-24V-F JQ1P-48V-F JQ1a-5V-F
Contextual Info: VDE HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 20 .787 JQ RELAYS FEATURES 10 .394 15.6 .614 mm inch JQ About Cd-free contacts We have introduced cadmium-free type products to reduce environmentally hazardous substances. Please replace parts that contain cadmium with Cd-free

HIGH VOLTAGE DIODE for microwave ovens

Abstract: Matsushita 10A 125 v JQ1aP-24V JQ1aP-12V JQ1-12V JQ1-24V 5 V DC RELAY Matsushita relay JQ1 JQ1P-24V JQ1P-12V
Contextual Info: JQ HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 10 .394 20 .787 JQ-RELAYS UL File No.: E43028 CSA File No.: LR26550 15.6 .614 • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c)

magnetic head 2mm 3 track

Abstract: JQ1-12V JQ1-18V JQ1-24V JQ1-48V JQ1P-12V JQ1P-18V JQ1P-24V JQ1P-48V LR26550
Contextual Info: JQ HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY 10 .394 20 .787 JQ-RELAYS UL File No.: E43028 CSA File No.: LR26550 15.6 .614 • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW 1a , 400 mW (1c)

smd diode sm 3c

Abstract: tr/smd diode sm 3c
Contextual Info: |p |-0 p p jQ j-jQ P |Q | Provisional Data Sheet No. PD-9.1543A IQ R Rectifier HEXFET POWER MOSFET IRFN0S4 N -C H A N N E L 60 Volt, 0.020Q HEXFET Product Summary H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis­

powerex R9G0 2100

Abstract: BP107 J180 R9G01800A
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 G B / I B Î S I P U fD O S Q Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f jQ ç f jf jQ p p OUEREX IN C bME ]> r — M A RK IN G