JO 4070 Search Results

4029

Contextual Info: • Case Outline Unit ; mm No. 4021C No. 4029 Unit ; mm r tj QA 5.2 No. 4032A — 19 — 5.5 Unit ; mm No. 4033 Unit ; mm No. 4070 y- No. 4075 - Unit ; mm ^ l'io. ‘t-'Jo 1 Unit ;mm 8.5 No. 4083 Unit ; mm No. 4086A Unit ; mm ■j' 9.0 — 20 — Case Outline

2NS404

Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55

URS4235S

Abstract: 3864S SM-19A 3655S 3863S 3865S URS2620S
Contextual Info: FLYBACK TRANSFORMER CORES Features • TV ±QII % a M N DISPLAY o|H Applications CRT°| AN0DE§ • Flyback transformers • High voltage transformers i|a |o |E a o jo lc t S S * £o|?W n o is e d ! m ^ \E . MM GAP*t£j m Materials • The flyback transform er core is used for

GR12881

Abstract: GR281 TT B6 C 110 N 12
Contextual Info: GREENWICH INSTRUMENTS USA 21E D • 4124774 0000052 3 ■ B IS GREENWICH ÜIHSTBUMEHTSUSA_ 3401 MONROE RD • CHARLOTTE. NC 28205 • 704 376-1021 • FAX 335-8707 • 1-800-476-4070 NON-VOLATILE MEMORY •* LOW PROFILE •* LOW POWER

CD40708

Contextual Info: Ib lS B 407713 Types CMOS Quad Exclusive-OR and Exclusive-NOR Gates High-Voltage Types 20-Volt Rating CD4Q70B — Quad Exclusive-OR Gate CD4077B — Quad Exclusive-NOB Gate The RCA-C D 4070B contains fo u r independ­ e nt Exclusive-OR gates. The R CA-C D 40778

4077B

Abstract: 4070B HCF4070B
Contextual Info: r z 7 SGS-THOMSON [LICTMOiSS ^ 7 # K HCC4070/77B HCF4070/77B GATES 4070B-QUAD EXCLUSIVE-OR GATE 4037B-QUAD EXCLUSIVE-NOR GATE . MEDIUM-SPEED OPERATION tpm = t p LH = 70ns typ. AT Vcc = 10V, C l = 50pF . QUIESCENT CURRENT SPECIHED TO 20V FOR HCC DEVICE . 5V, 10V AND 15V PARAMETRIC RATING

RS422 TO RS232 CONVERTOR CIRCUIT

Abstract: GW232 Greenwich Instruments rs232 crossover
Contextual Info: NOTE This e q u ip m e n t has bee n te s te d and found to com ply with the limits for a Class B d ig ita l de vice , p u rs u a n t to p a rt 15 of the FC C Rules. Those limits are d e s ig n e d to p ro v id e re a s o n a b le protection against harm ful interference in

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

IC ANA 618

Abstract: ANA 618 4057A 4072A 405b 1N4057A 4066A ANA 618 200 10
Contextual Info: 1N4057 thru 1N4085A Mierosemi Corp. ' T h e d 'o d e e x p e r t s SCOTTSDALE, A l SANTA ANA, CA F o r m o re in fo rm a tio n call: 602 9 4 I-6 3 0 0 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES . ZENER VOLTAGE 12.4V to 200V . TEMPERATURE COEFFICIENT RANGE: 0.0 05% / °C to 0.002% /°C

Contextual Info: RoHS THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PR O PR IE TA R Y' TO B E L FUSE INC, AND SH ALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPR O VAL OF B E L FUSE INC, 2002/95/EC E L E C T R I C A L C H A R A C T E R IS T IC S 8 25°C

CD40708

Abstract: CD40778 CD4070B 15-V CD4077B RCA-CD4077B cd4070b harris ja0b
Contextual Info: HARRI S HARRIS j j CMOS Quad Exclusive-OR and Exclusive-NOR Gates High-Voltage Types 2 0 -V o lt Rating C D 4 0 7 0 B - Quad Exclusive-OR Gate C D 4 0 7 7 B - Quad Exclusive-NO R Gate • C D 4 0 7 0 B c o n ta in s f o u r in d e p e n d ­ e n t E x c lu s iv e -O R gates. T he R C A -C D 4 0 7 7 B

SANYO sh2a027-1

Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Contextual Info: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead

Sii 9573

Abstract: transistor 21Y S-8252 ed 7aa dude hx 630
Contextual Info: R O C K W E L L S E M I C O N D U C T O R S Y S T E M S access RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY *Ü O ¥ ¡8 S N & B -, Rockwell September 1998 fô i S y s iiîs Preliminary Information This do cum e nt contains in fo rm a tio n on a pro du ct under developm ent. The param etric in fo rm a tio n contains target

VEB mikroelektronik

Abstract: mikroelektronik DDR aktive elektronische bauelemente ddr TESLA Tesla katalog 74c915 V4093D 4502c mosfet 4040BC K561TM2
Contextual Info: DATEN DIGITALER INTEGRIERTER SCHALTKREISE AMATEUR BIBLIOTHEK Klaus K.Streng Streng, Klaus K.: Daten digitaler integrierter Schaltkreise CMOS-Schaltkreise . Berlin: Militirverlag der DDR. 1987. - 192 S.: 314 Bilder (Amateurbibliothek) ISBN 3-327-00360-2 l. Auflage, 1987

high power Triode for induction heating

Abstract: BRIMAR general electric valve data 4043 POWER TRIODE cold cathode thyratron 4228A BS448 cathode ray x ray filament transformer Vacuum Tube 300B
Contextual Info: Standard Valves Standard Telephones and Cables Limited V A L V E D IV IS IO N C O N N A U G H T HOUSE, A L D W Y C H , L O N D O N , W .C .2 Telephone : Holborn 8765 Telegrams “ Relay, Telex, London” PRICE Septem ber, 1947 15/- A_I Standard Telephones and Cables Limited

11018-A

Abstract: LQ 450 led segment pdr to sma SDIP64 TLCS-470 TMP47C662N TMP47C862N
Contextual Info: TOSHIBA TMP47C662/862 UNDER DEVELOPMENT CMOS 4-BIT MICROCONTROLLER TMP47C662N, TMP47C862N The 47C662/862 have extended I/O ports, A/D converter, programmable pulse generator, and high breakdown voltage outputs based on the TLCS-470 series. PART No. ROM RAM

RXPE 40

Abstract: Reverse Power Relay RXPE40 RAEPA RXPE 40 Abb reverse power relay rxpe 42 relay ASEA rk 47 CT 3-12 overload relay rk511 ASEA abb diode
Contextual Info: 4L M U INFORMATION M » ASE*BROWNBD^Éflr F ra m 'û a tB R F R , December 19S3 ABB Refays IjîFû'Nd. RK 511-300 E fie g . P ag« 5625 1 Edition i Directional relay type R X PE k o Single phase directional current relay using voltage reference o Different current ranges available for operate values from 3 nriA

Contextual Info: HARRIS S S E M I C O N D U C T O R H April 1996 I 5 1 2 - B it, H ig h S p e e d D /A 7 3 1 C o n v e rte r Description Features • 100MHz Throughput Rate fiSO W • Low P o w e r. m • 0.75 LSB Integral Linearity Error

scr FIR 3d

Abstract: D1414 DSP56001 cd 7638 10-band Graphic Equalizer Amplifier JD 1803 scr FIR 3D 41 kaiserwindow 72 jqc 14111
Contextual Info: APR7/D Rev 2 Implementing IIR/FIR Filters with Motorola's DSP56000/DSP6001 Motorola Digital Signal Processors Implementing IIR/FIR Filters with Motorola’s DSP56000/DSP56001 by John Lane and Garth Hillman Digital Signal Processor Division MOTOROLA APR 7 Motorola Inc. 1993

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

31-CO

Abstract: cd 5890 marking code 1CJ
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS LS nickicon Snap-in Terminal Type, Smaller-Sized series Smaller • W ithstanding 3 0 0 0 hours application of ripple current at 85°C. • One rank smaller case sized than LU series. • H igher production efficiency due to 4.0 m m long term inal.

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4

lvoh-6

Abstract: Crystal Oscillator 204B-6F 4.0000 .. 07 one shot pulse generator pdr to sma TMP47C662N TMP47C862N SDIP64 TLCS-470
Contextual Info: T O S H IB A TMP47C662/862 UNDER D EVELO PM EN T CM O S 4-BIT M ICRO CO N TRO LLER TMP47C662N, TMP47C862N The 47C662/862 have extended I/O ports, A/D con verter, p ro g ram m ab le pulse g e n e ra to r, and high breakdown voltage outputs based on the TLCS-470 series.

4017BP

Abstract: 4013BP 4069BP 4016BP 4066bp hef 4011bp IC NAND 4040BP 4000BP 40106BP 4030BP
Contextual Info: Signetics Integrated Circuits - Loemos HEF 4000 Series LOCIMOS Locally Oxidised CMOS LOCM OS g e n e r a l d e s c r ip t io n LOCMOS is com ple tely pin, fu n c tio n and ty p e num ber com patible w ith th e 4 0 0 0 and 14000 fam ilies. Compared w ith o rd in a ry CMOS, LOCMOS c irc u it