JO 2015 Search Results

Contextual Info: M an A M P company SPST Absorptive Switches With Drivers 2661 Series V2.00 Features • Broadband Frequency Ranges — A2 • Environmentally Sealed 3 .0 : CIA T H R J H C IE ¡2 P ^ A C Ü S : • TTL Compatible 1 JO ¡33 0 • Constant VSWR é Description

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include

Contextual Info: TAIWAN s SEMICONDUCTOR M B R 2 0 3 5 C T - M B R 2 0 2 0 0 C T 20.0 AMPS. S ch o ttky B a rrie r R ectifiers R o H S TO-220AB COMPLIANCE Features I I— P la s tic m aterial used ca rrie s U nd e rw rite rs Laboratory C la ssifica tio n s 94V -0 M etal silicon ju n ctio n , m a jo rity ca rrie r conduction

AG13

Abstract: military switch tt7705cp ag13 or lr44 CR14500 JO 2015 TT7792CP LED lights manufacturing technology Emergency Lights New type Lumens
Contextual Info: 10
#PY

t
1PSUMBOE
03
 
t
'BY
 5PMM
'SFF
 XXXDPBTUQPSUMBOEDPN 3/08 LED Lenser Manufacturing $0"45
-&%
-FOTFS
MJHIUT
BSF
EFTJHOFE

FSNBOZ
VTJOH

4 LETTER mark code

Abstract: 1772-XXX-2015 L1414
Contextual Info: AC - CAPACITORS Suppression Capacitors Class X2 AC 275 V MKT F 1772-2000 / 2004 / 2015 2030/2900/2901 Ordering Code* Lead Length X in mm 4-1 F 1772-XXX-2004 6-1 15-1 30+5 F 1772-XXX-2000 F 1772-XXX-2015 F 1772-XXX-2030 Reference Standards: EN 132 400, 1994

Contextual Info: PX-400 Clock Oscillator 00 4 PX- 19 Features t
$PNNFSDJBM
BOE
.*-
NPEFMT t
'VMMZ
3P 4
$PNQMJBOU
* t
5FNQFSBUVSF
SBOHF
GSPN
¡$
UP
¡$
UP
¡$
UP
¡$ t
4UBOEBSE

BOE

QJO
%*1
IFSNFUJD
QBDLBHFT t
"WBJMBCMF
XJUI
$MBTT
#4DSFFOJOH
QFS
.*-13'

TM 2016 AP

Abstract: 32L3
Contextual Info: A fa Detector Appendix All d e t e c t o r p ro d u cts are m anufactured, tested and handled u n d e r stringent electrosta tic d is­ Reliability and Parts Screening charg e p ro te c tio n . Each d e t e c t o r leaves th e fa c to ry in its o w n anti-static envelo pe.

Contextual Info: PD-30-150_ 0 POWER DIVIDER / COMBINER 1 to 300 MHz / 3-Way / Broadband / Lumped Element Design / Low Insertion Loss / BNC Connectors PRINCIPAL SPECIFICATIONS Model Number Isolation, Insertion Frequency Frequency Range, Performance, dB, Loss, dB, MHz

VOLTRONICS CAPACITORS

Contextual Info: A_55HV & A_55SD Series - 55pF Teflon Dielectric Trimmer Capacitors GENERAL SPECIFICATIONS A.55HV SERIES Q at 75 MHz at maximum rated C U.S. PATENT NUMBER 5,229,911 1,0 0 Temperature Coefficient 0±100 ppm/°C Insulation Resistance 10s megohms Seal 40 pounds/in2

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. GP 00 LTR A D E S C R IP T IO N IN IT IA L DATE DWN 1 8 /D E C /0 7

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T by t II ttc o E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 ,- RESERVED. GP C O R P O R A T IO N . REVIS IO N S 00 LTR D E S C R IP T IO N DATE 13SEP07 ECO —07 —02941 5

Contextual Info: M an A M P com pany SPDT Medium Power Switches With Drivers 2665 Series V2.00 Features Mechanical Outline • O ctave Bands to 18 GHz • 10 Watts CW • TTL C om patible • Environm entally Sealed 2-4 and 4-8 GHz 2 30 5MA jALK n pi arrfi; 4: . 1?=i ?-• ■ V-:

ISL91106

Contextual Info: Tehosyöpöt kännykät kuriin Uusimmat älypuhelimet vaativat välillä enemmän tehoa esimerkiksi webbiselailussa. Tämä asettaa isoja vaatimuksia järjestelmän tehonsyötölle. Niihin voi vastata uuden polven regulaattoripiireillä. Toiminta-aika akulla ja lämpöbudjetti ovat kaksi ratkaisevaa haastetta, joihin mobiililaitteiden

Contextual Info: C A TALO G MICRO SWITCH F R E E P O R T ILLINOIS. U. S. A A DIVISION O F H O N E Y W E L L INC. L IS T IN G 8AS228 ACTUATOR SWITCH F E D . M FC . C O D E 81929 2 - 5 6 U N C X . 6 2 5 REF ROUND P A R T NO. JS - I0 3 6 5 (2 ) 2 -5 6 UNC HEAD MACHINE SCREW

PN3634

Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO VCB vi M IN I V I M IN IV I M IN | m A I M A X (V I HFE <§> \?C & 1C M IN M AX COB ( p i M A X FT (V I Im A I 10 10 10 10 150 150 20 20 8 8 10 10 250 250 15 15 1 500 3 10 1 500 1 500 e 2 12 5.5 25 25 1 150 500

Contextual Info: JlfcZCM M a n A M P co m pa n y SPDT Reflective Switches With Drivers 2664 Series V2.00 Features • B roadb an d F re q u en cy Ranges • E n viron m en tally S ealed • TTL C o m p a tib le • Small Size 12 <3 0 D /A T H R U H O L E 2 P L A C E S } - 1 2 0 -(3 0 .5

Contextual Info: Type TBS All-Tantalum Button Formerly W13 Wet Tantalum Capacitors • Wet Tantalum C apacitors High AC and Surge Currents All Tantalum Construction Qualified to MIL-C- 83500 3 Volt Reverse Voltage To125°C 100% Burn In Custom Designs Available MallorY The TBS design was the first unit of

OM361

Abstract: SF240 booster-amplifiers vHF amplifier module
Contextual Info: OM361 J V_ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a th in -film substrate, intended fo r use in mast-head booster-amplifiers, as an am plifier in M ATV systems, and as generalpurpose am plifier fo r v.h.f. and u.h.f. applications.

philips om360

Contextual Info: • bbSBRBl 003243A 25b M A P X i N AMER PHILIPS/DISCRETE OiV360 b^E J> _ _ y v _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a thin -film substrate, intended

pin DIAGRAM OF DIP TOP 244 PN

Abstract: OM2064 philips ferrite core 4b1 wideband amplifier uhf amplifier HYBRID V.H.F./U.H.F. AMPLIFIER HYBRID V.H.F./OM2Q64
Contextual Info: Product specification Philips Semiconductors Hybrid integrated VHF/UHF wideband amplifier OM2Q64 PINNING DESCRIPTION A three-stage wideband am plifier in hybrid integrated circuit technology on a thin-film substrate, intended for use in mast-head booster-am plifiers,

OM2050

Contextual Info: O M 2050 _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band am plifier in hybrid integrated circuit technique on a th in -film substrate, intended fo r RATV and M ATV applications. QUICK REFERENCE D A T A vB f = Frequency range

Contextual Info: J A E ELECTRONICS INC S1E D • ^jC£ MflTBMbS Q0Q038fi 0 ■ PIN HEADER WITH MOUNTING EARS TX5-LT-M: Angle through hole type With Expansion Posts (H) .146 (3.7) S B ä .276(7) .050 ± .004(1.27 ± 0.1 ) (Pitch) A ± .0 0 6 (± 0 .1 5 ) Without Expansion Posts (IN!)

transistor BFR91

Abstract: BFR91 transistor CR NPN BFR91 philips
Contextual Info: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,

OM370

Contextual Info: OM370 _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a th in -film substrate, intended fo r use in mast-head booster-amplifiers, as an am plifier in M ATV and CATV systems, and as