JJPD42 Search Results

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

D4217400

Abstract: nec 4217400
Contextual Info: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

VA140

Contextual Info: JJPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM F l Mlí V NEC Electronics Inc. Pin Identification The pPD424102 is a static-column dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology using trench capacitors mini­

nec 4217400

Abstract: nec 4216400 4216400
Contextual Info: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. • h4275S5 RRb H N E C E JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM ~ h Description T he ¿/PD4216400 and the //PD 4217400 are fast-page d ynam ic RAMs organized as 4,194,304 words by 4 bits

d424400

Contextual Info: í'U'r ¿ i MEC JJPD424400 1,048,576 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. February 1991 Description The pPD424400 is a fast-page dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

UPD4216412

Contextual Info: SEC pPD4216412, 4217412 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information The jjPD4216412 and the ¿¿PD4217412 are staticcolumn dynamic RAMs with write-per-bit organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide tech­

d31010

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000F32 2 M -W O R D BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The M C -422000F32 is a 2,097,152 words by 32 bits dynamic RAM m odule on which 4 pieces of 16 M DRAM: jjPD4218165 are assembled.

nec 4216400

Abstract: 7400g PD4216400
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¡uPD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The JJPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

UPD42S4800-70

Abstract: 42s4800 uPD424800 nec 42s4800 42S4800LE-70 UPD424800-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PP42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The jjPD42S4800, 424800 are 524,288 w ords by 8 bits CMOS dynam ic RAMs. The fa st page mode capability realize high speed access and low power consum ption.

LE-70

Abstract: LE-60
Contextual Info: SEC JJPD4216101, 4217101 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The/iPD4216101 and the/jPD4217101 are nibble-mode dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power

Contextual Info: SEC JJPD42272 Picture-in-Picture Generator NEC Electronics Inc. Description Pin Configuration The ¿iPD42272 is a picture-in-picture generator designed for use in NTSC and PAL broadcasting systems. Picturein-picture describes the device’s ability to combine mul­

Contextual Info: nue 2 « SEC NEC Electronics Inc. JJPD424256 262,144 X 4-Bit Dynamic CMOS RAM July 1992 Description The¿/PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

Contextual Info: " we NEC JJPD4264800, 4265800 8,388,608 X 8-Bit Dynamic CMOS RAM Preliminary Se p tem b er 1993 NEC Electronics Inc. Description RAS-only refreshing and 4096 a ddress co m b in atio n s of The juPD4264800 and p/PD4265800 are 64M-bit dynam ic RAMs organized a s 8,388,608 words by 8 bits. They are

Contextual Info: NEC NEC Electronics Inc. JJPD42505 Line Buffer for Communications Systems Description Pin Configurations The ¿UPD42505 is a 5048-word by 8-bit dual-port line buffer fabricated w ith a silicon-gate CMOS process. The device is capable of asynchronous read and w rite

pd424800

Abstract: nec 424800
Contextual Info: m JJPD424800 524,288 x 8-Bit Dynamic CMOS RAM e NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The PD424800 is a fast-page dynamic RAM organized as 524,288 words by 8 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

EZ 923

Abstract: V907
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT jjPD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800L, 4216800L, 42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

upd 40pin

Abstract: nec upd ic
Contextual Info: SEC pPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The /jPD424190A/L and jjPD42S4190A/L are fast-page dynamic RAMs organized as 262,144 words by 18 bits and designed to operate from a single power supply. Optional features are power supply voltage + 5 V or

lt 6228

Abstract: lt 6224 lt 6225 LT 6227 PD424402-80 PD424402
Contextual Info: NEC JJPD424402 1,048,576 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations Th e /xPD424402 is a static -co lu m n dynam ic RAM organ­ 26/20-Pin Plastic SOJ ized as 1,048,576 by 4 bits and designed to op erate from a single + 5 -v o lt pow er supply. Advanced polycide te c h ­

nec 7805

Abstract: 7805 nec NEC JAPAN 7805 TCA 7805 CI 7805 pin diagram DETAILS of ic 7805 7805 nec japan
Contextual Info: PRELIM INARY DATA SHEET CMOS INTEGRATED CIRCUIT mPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The jjPD42S17805, 4217805 are 2 097 152 words by 8 bits CMOS dynam ic RAMs w ith optional hyper page mode. Hyper page m ode is a kind o f the page mode and is useful fo r the read operation.

Contextual Info: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT juPD42S17405L, 4217405L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE Description The jjPD42S17405L, 4217405L are 4 194 304 words by 4 bits CMOS dynamic RAMs with optional hyper page

itr 8102

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jjPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: '•■ÍlF - N i,.- NEC JJPD42S64400, 42S65400 16,777,216 X 4-Bit Dynamic CMOS RAM Preliminary September 1993 NEC Electronics Inc. Description The ¿iPD42S64400 and /JPD42S65400 are 64M-bit dy­ namic RAMs organized as 16,777,216 words by 4 bits. They are designed to operate from a single +3.3-volt

Contextual Info: SEC JJPD42270 NTSC Field Buffer NEC Electronics Inc. Description Pin Configuration The /JPD42270 is a field buffer designed for NTSC TV applications and fo r other applications where serial data is needed. Equipped w ith four planes of 263-line by 910-bit storage, the /JPD42270 can execute serial w rite

nec upd pulse generator

Contextual Info: L iM li W NEC Electronics Inc. Description The jjPD424810A/L and /JPD42S4810A/L are fast-page dynamic RAMs with the write-per-bit option, organized as 524,288 words by 8 bits, and designed to operate from a single power supply. Optional features are power supply voltage + 5 V or