JI 32 Search Results

Contextual Info: 88, 9 DO NOT SCALE DIMENSIONS 85, 4 THIRD ANGLE METRIC IN mm PROJECTION 83, 4 75 X 5, 08 = 76, 2 0,45- S, 08 if i - ~f~ \ —¡f - -ji |r~ ji ji I I ji li ji ~ir~~ -02, 6 0,2 0, 585 DETAIL 21 ,8 0, 85 "X 1 0, 7 -J L-, . i — DETAIL NO N F -48 ROW -Q •o

euro connectors 8609

Abstract: euro connector 8609
Contextual Info: 2 „ , 3 4 ^ + 0 -2 4 4 .6 - 0 TECHNICAL SPECIFICATION 1 . 0 - 8.1 1 2 i I íI HOUSING MATERIAL 1516 11 11 11 íI JI JI iI 11 iI JI JI JI iI THERMOPLASTIC POLYESTER U L 9 4V -0 , GREY iI H O U S IN G W HEN CAN USED W IT H CONNECTORS A CONTACT / HARPOON C O N T A C T A C T IV E

tqfp128 weight

Abstract: RS232-Connector C161 C161CS J1850 JP13
Contextual Info: kitCON-161CS/JC/JI Hardware-Manual Edition December 1999 A product of a PHYTEC Technology Holding company kitCON-161CS/JC/JI In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark  symbol does not infer that a

3K45

Contextual Info: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1641 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ji-MOS II 15.9 MAX 0 32±02 “ '/ I High Speed, High Current DC-DC Converter, Chopper Regulator, Relay Drive and Motor Drive Applications

ocr4

Abstract: 2SD1762 transistor 2a h
Contextual Info: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o

FPS200

Abstract: schematic diagram of fingerprint sensor schematic diagram of fingerprint attendance sensor block diagram of fingerprint sensor fingerprint based attendance system microcontroller fingerprint block diagram of Fingerprint based security system Fingerprint based security system Veridicom fps200 gabor filter
Contextual Info: Nios II Processor-Based Fingerprint Identification System Third Prize Nios II Processor-Based Fingerprint Identification System Institution: College of Communication Engineering, Chongqing University Participants: Ji Wang, Liang Wu, Yong Liu Instructor: He Wei

Contextual Info: □Mn ADC-530 12-Bit, Ultra-fast, Low-Power A/D Converter FEATURES ji 12-Bit resolution 350 Nanoseconds maximum conversion time Low-power, 2.1 W Small initial errors Three-state output buffers -55 to +125 °C operation Small 32-pin DIP No missing codes i 4L

Contextual Info: ÇTEYC-1 15 1H P f l r ò # I I-: i/ft ht j g iS {60 H J iâ T EY C -11 51 H P ^ Î Ï S J k f i .¡it Ü Æ ÜS - ü Ji j r - m ¡i1: í ;i J is h Ji lr: .¡it fV : o 6. 2 2 0 6 8 K P a i li f f ît 2 4 V D C fi'j 0 .2 . 0 .2 5 . 0 .5 :iiiu Hi fr'i : 4 -2 0 m A { - M

Contextual Info: 1 QuickS/vitch Products Hi gh-Speed CMOS Q ji ckSwi tch s iconducior,inc. QS34XR245 32- B t Low Resistance Multi Width™ Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs

cl 740

Contextual Info: I ITCrtl JI L I I CL*J LI T - l 3/4 5mm Ultra Bright AlInGaP Yellow LED Lamps LTL2F3VYK LTL2H3VYK LTL2P3VYK LTL2R3VYK 8degree 15degree 22degree 30degree Package Dimensions Features Very high luminous intensity output. Low power consumption. High efficiency.

n channel mosfet 900v

Contextual Info: 2SK2655-01R FU JI N-channel MOS-FET FAP-IIS Series 900V High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 03.0\ » > Applications - 100W Switching Regulators UPS

L04A

Contextual Info: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance

SN74LV74

Contextual Info: SN74LV74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP _ SC LS1B9- FEBRUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted D, DB, OR PW PACKAGE (TOP VIEW CMOS) 2-ji Process Typical Vq lp (Output Ground Bounce)

017Q

Contextual Info: FU JI 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Q 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SK2760-01 FU JI SILSKLrtJiaJG FAP-IIS Series N-channel MOS-FET 600V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 > Applications - 0.6 Switching Regulators

Contextual Info: I ITEffl JI L I I CL*J k I T - l3/4 5mm Ultra Bright AS AlInGaP Yellow LED Lamps LTL2F3KYK LTL2H3KYK LTL2P3KYK LTL2R3KYK 8degree 15degree 22degree 30degree Package Dimensions Features High luminous intensity output. Low power consumption. High efficiency.

Contextual Info: PD - 9.1505A International I R Rectifier IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S IQ E ji-i / p T Voss = -30V RDS on = 0.058Q Top View Description

Contextual Info: CRYSTAL RESONATORS Miniature Resistance Weld Type 'h&bkBJHnTAT-49, AT-38 •RESISTANCE OF SERIES RESONANCE Cl AT-38 - . TYPE m& FREQUENCY _ -Ji & ~— 3.072~ 3.5MHz IlS rt-K Fund. 3000 max. 3.5~ 3.8MHz Fund. 1500 max. 3.8~ 4.1MHz Fund. 1200 max.

Contextual Info: F U JI 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: LITEM JI SEMICONDUCTORS MBR1530CT thru 1560CT TO-220CT FEATURES • Plastic package has U /L Flam m ability Classification 94V-0 Exceeds environmental standards of M IL S-19500 Metal of silicon rectifier, m ajority carrier conduction Lo w power loss, high efficiency

intel 945 motherboard schematic diagram

Abstract: 3FS SMA CS9233 HPF 505 mPC 514 yamaha ic CS4232 CS4232-KM CS4232-KQ MPU-401
Contextual Info: CS4232 Semiconductor Corporation Games Compatible Plug-and-Play Audio System Comjoatible with Sound B la ste r , Sound Blaster Pro , and Windows Sound S ystem ™ Fully Plug and Play Compatible Industry Leading Delta-Sigma Data Converters ADPCM, ji-Law & A-Law

Contextual Info: <^£.m.i-C.and\Ji<Aoi ZPioducti., {Jnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

2sk2082

Abstract: 2SK2082-01 equivalent
Contextual Info: FU JI 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V 9A 150W > Outline Drawing > Features - 1,4Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators