JFET 305 Search Results

LF351 op-amp integrator

Abstract: LF351 m op-amp integrator hp 5082-4204 pin photodiode HP 5082-4204 HP5082-4204 application of TL084 LF351 op-amp application 5082-4204 TL074 equivalent HP 5082 4204
Contextual Info: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps U FEATURES DESCRIPTIO • The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision specifications. It replaces all the popular bipolar and JFET

LF351 op-amp integrator

Abstract: tl084 LT LF351 m op-amp integrator LT1057 2N4393 HP 5082-4204 LT1058A P15V application of TL084 LF353 APPLICATION
Contextual Info: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps FEATURES DESCRIPTION n The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision specifications. It replaces all the popular bipolar and JFET

MC34181D

Abstract: 2304 sot 353
Contextual Info: MC34181,2,4 MC33181,2,4 Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 series of monolithic operational amplifiers. This JFET input series of operational amplifiers operates at

transistors 1UW

Abstract: 2N4393 TL084 DATA SHEET LF412A LT1057 LT1058 OP-215 tl072 photodiode tl074 tl084 replace TL084
Contextual Info: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision

NTC SG 120

Abstract: FAN6747 1N4007 JESD22-A114 SOIC127P600X175-8M FAN6747LMY
Contextual Info: FAN6747 Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ High-Voltage JFET Startup ƒ Two-Level Over-Current Protection OCP with 220ms Delay The highly integrated FAN6747 PWM controller provides several features to enhance the performance

ha-5180

Abstract: A5180
Contextual Info: H A -5180 !T! HARRIS Low Bias Current, Low Power JFET Input Operational Amplifier M a y 1990 Features A pplications • Ultra Low Bias C u rre n t. 250fA • Electrometer Amplifier Designs • Low Power Supply Current . 0.8mA

FAN6747

Abstract: hv 102 mosfet motor dc 48v resistor hv 1N4007 JESD22-A114 SOIC127P600X175-8M SMPS INRUSH CURRENT LIMITER
Contextual Info: FAN6747 Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ High-Voltage JFET Startup ƒ Two-Level Over-Current Protection OCP with 220ms Delay The highly integrated FAN6747 PWM controller provides several features to enhance the performance

ha-5180

Abstract: HA2-5180 HA-5180-5 HA7-5180 ha5180 HA5180-5 HA25180 application note 555 electrometer 250FA
Contextual Info: H A -5180 !T! HARRIS Low Bias Current, Low Power JFET Input Operational Amplifier M a y 1990 Features A pplications • Ultra Low Bias C u rre n t. 250fA • Electrometer Amplifier Designs • Low Power Supply Current . 0.8mA

GENNUM HEARING AIDS

Abstract: hearing aids amplifiers hearing loop hearing
Contextual Info: Low Current Quad Inverting Amplifiers LX509 - DATA SHEET DESCRIPTION FEATURES • 210 µA typical current drain The LX509 consists of 4 independent low noise, low current inverting operational amplifiers utilizing Gennum's low voltage bipolar JFET technology. Each amplifier has a minimum open

hearing aid amplifiers loop

Abstract: GENNUM HEARING AIDS circuit diagram of hearing aid hearing aids loop hearing loop telecoil Hearing Aid Circuit Diagram LX509 hearing aids coil hearing aids
Contextual Info: Low Current Quad Inverting Amplifiers LX509 - DATA SHEET DESCRIPTION FEATURES • 210 µA typical current drain The LX509 consists of 4 independent low noise, low current inverting operational amplifiers utilizing Gennum's low voltage bipolar JFET technology. Each amplifier has a minimum open

APT1201R6BVR

Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

A6160

Abstract: 060A00 HA2-5160
Contextual Info: IS SEtllCOND SECTOR IDE D | 43D5271 DOiaatB *5 | 53 HARRIS H A - 5 1 6 0 /6 2 Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifier Applications Features • • • • • • W ide Gain Bandwidth A V > 1 0 . 100MHz

APT1001RSVR

Contextual Info: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

HA170

Abstract: js35
Contextual Info: HARRIS SEMICOND SECTOR 10E D I 4305571 001227a b | HA-5170 gj HARRIS Precision JFET Input Operational Amplifier Features Applications • • • • • • • • • • • Low Offset Voltage. 100 iV Low Offset Voltage D r ift. 2(iV/°C

APT1001RBVFR

Contextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT8075BVFR 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8065AVR 800V 11.5A 0.650W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT6045SVR 600V 15A 0.450Ω POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

LT1010

Abstract: LT1102 LT1102ACH LT1102AMH LT1102CH LT1102MH
Contextual Info: LT1102 High Speed, Precision, JFET Input Instrumentation Amplifier Fixed Gain = 10 or 100 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1102 is the first fast FET input instrumentation amplifier offered in the low cost, space saving 8-pin

VG-S6

Abstract: APT8065BVFR APT8065
Contextual Info: APT8065BVFR Ω 13A 0.650Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8067HVR 800V 11.5A 0.670Ω POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT8065AVR

Abstract: 115AJ
Contextual Info: APT8065AVR 800V 11.5A 0.650Ω POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1201R6BVR

Abstract: APT1201R6SVR
Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

lt 864

Abstract: LT1010 LT1102 LT1102ACH LT1102AMH LT1102CH LT1102MH marking s4b lt11021
Contextual Info: LT1102 High Speed, Precision, JFET Input Instrumentation Amplifier Fixed Gain = 10 or 100 U FEATURES DESCRIPTIO • The LT 1102 is the first fast FET input instrumentation amplifier offered in the low cost, space saving 8-pin packages. Fixed gains of 10 and 100 are provided with