HA170 Search Results

Contextual Info: HA17008R 8-Bit Multiplying Digital to Analog Converter Description The HA17008R series are 8-bit monolithic D/A converters which have built in, a reference current amplifier, an R-2R ladder resistor, and 8 high speed current switches. By setting the reference voltage and resistance, the maximum output current can be freely varied in response

HA17084

Abstract: ha17080 equivalent HA17082 DP-14 HA17080 HA17080A HA17082A HA17083 HA17083A HA17084A
Contextual Info: HA17080 Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high input impedance and a low input bias current. Thus they can be

ha17741

Abstract: HA17741 datasheet HA17008RFP HA17008RP Hitachi DSA0047
Contextual Info: HA17008RP/RFP 8-Bit Multiplying Digital to Analog Converter Description The HA17008R series are 8-bit monolithic D/A converters which have built in, a reference current amplifier, an R-2R ladder resistor, and 8 high speed current switches. By setting the reference voltage and resistance, the maximum output current can be freely varied in

Contextual Info: HA1708T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.9pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1050 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: HA1703H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio5.3 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: HA1702A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio5.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: HA1705E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2pì C1/C2 Min. Capacitance Ratio5.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: HA1709F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.4.7pì C1/C2 Min. Capacitance Ratio6.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1050 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: HA1703F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio5.3 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: HA1704A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.8pì C1/C2 Min. Capacitance Ratio5.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: HA1704H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.8pì C1/C2 Min. Capacitance Ratio5.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: HA1704D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.8pì C1/C2 Min. Capacitance Ratio5.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: HA1708H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.9pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1050 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: HA1705F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2pì C1/C2 Min. Capacitance Ratio5.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: HA1708D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.9pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1050 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: HA1707EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.1.7pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1100 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

Contextual Info: HA1707B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.3pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: HA1705EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.1.1pì C1/C2 Min. Capacitance Ratio5.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1200 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

HA17012

Abstract: Digital to analog converter HA17012 HA17012B H150 HA17012C HA17012P B511-1
Contextual Info: H A 1 7 0 1 2 ~ > 'J — X 1 2 -b it Multiplying D igital-to-A n alo g C o n verte r HA17012x i j - X l ± , 121' ••/ -f > ? 'D /A a V ' < — 9 X \ itlg 'fiffjg , / U J: 1 2Kfrl?£ 0i t , HA17012P • 4$ * • • 1 m A * ¥ A * S 7 £ T ', i-ro t- U > /^ra*< 250ns typ t M <, i S ^ & ^ n r t g - C t „

HA17324 equivalent

Abstract: HA17358 equivalent M5218 equivalent HA17458 equivalent HA17555 equivalent LM555 ha17555 M51841 HA17431A LM741 equivalent HA17324 equivalent 8 pin
Contextual Info: Function NEC Single Op-Amps |iPC741 TOSHIBA MATSUSHITA! i TA7504 AN1741 jr c MITSUBISHI! NS Tl FUJITSU NJM741 M51802 LM741 J1A741 MB3603 HA17741 MB3608 HA17080 AN1081 HPC801 Others HITACHI LF351 TL080 LM747 JJA 7 47 HA17747 LM1458 MC 1458 •HA17458 tPC1458

Contextual Info: HA1706E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: HA1707F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.3pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: HA1707D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.3pì C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: HA1704EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.900fì C1/C2 Min. Capacitance Ratio5.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.1.2k P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS