JC 7K Search Results

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2005 RELEASED FOR PUBLICATION BY - 2 3 OCT. 2005 LOC E ALL RIGHTS RESERVED. D B P ES HOL DESCRIPTION LTR B2 B3 DATE DWN APVD Released as per ECR-09-006012 16-MAR-09 SP JC ECR-13-007968 14MAY2013 KR TN 2 FOR A SPECIFIC PN FOR A RESISTANCE VALUE

Contextual Info: REVISIONS D fiA iV lS G MADE IN AMERICAN PH O iEC T'O N B1 COZ^Máx B2 REVISED PER ECO-09-0221 78 ECR-10-022530 i 1 DWN DATE DESCRIPTION LTR APVD AEG KK 25SEP09 14FEB11 KK HMR !=P Jio a jC C T <*8> 3í í r 0 0 5 C1lA $3 i / * i 0,1 s D1A" (S W ns %}—

cd 3313 eo

Abstract: SIS630 sis 630 TFK U 111 B TFK U 4311 B 340S2 tfk 014 TFK S 153 P 101 SIS-630 PPCV
Contextual Info: 13/ SlEYiCTRL Q RTTCTWL 340S2 REV: 05 PN:37-38016U -50 -JiliSMCEIHERMON ,AU1 Afc£2ac 23 23 23 .AN31 A i 23. . AL», _AM2Zc A U JC JiMaiL HR&oy? HREQfi H V 33 HREOfO •> wtj5 1 W H - » fVMUJ ~FTOT "hOTT H HA«? u* vu tu a or oc m i* W M IP M '* a et ec S k t e v tr

Contextual Info: REVISIONS i m MÆA * DCP No: 1398 DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE 14-53 A RELEASED JWM 8 /2 7 /0 3 JC 8 /2 8 /0 3 DJC 8 /2 8 /0 3 V V A nn n r J3 u. u SL A V E Dn n D U. U _ POWER SUPPLY 4 MASTER TFMMfA 7 2 -7 2 4 5 i o 1 Effective: 7 / 8 / 0 2

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Contextual Info: s fit C JZ /À fP JÆ JC /s r PINS AND SNAP RINGS ¿ ¿ -/S WIRE CRIMP CRIM P SYMBOL DIM a a - / s GO NO GO TERM M AL CRIMP HEIGHT JX Z 5 M T S */=> / -Æ /G NO GO TÄ /s r a z - / s INSULATION CRH4P CRIM P SYMBOL DIM Z 2 -/Ö A GO f L Ç & 0 O S LO 7-k INACTIVE,

Contextual Info: H AMI A 'p • 'M il i Ht . î = i h1r ôàÀAJnm * • c_r . A .* * * V ’ or’ «a_i, o t /-.mucu^u - [M.s 3^ Í aNV V-«,< - o e e « P i^ c M » M i r & i / c n 5 e ^ t ü >r«iffw x x jf rii^ia ' « j* * 'w»^enw h««t » « jc * " l ü -ww« ~|‘ ~>*/& tÜNDtm: C t HJT*_T_ ii.s.ai

Contextual Info: 6 1 AA 22 ECO-11-OUS7B A MECHANICAL: 6610176-5 Mag45tw YYW W D CH IN A MMNQ012 JC KZ M ATE R IALS: -H O USING - TH ERM O PLASTIC PET P O LY E ST E R FLA M M A B ILIT Y RATING UL 9 W - 0 . -S H IE L D - .010" THICK. C26800 B R A S S P R E P LA T E D WITH 3 0 m INCH MIN SEM I-BRIGHT

2SK680

Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Contextual Info: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Contextual Info: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/23
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AFAA

Abstract: HCJ 5B hcj 91 hcj 6a a5lc
Contextual Info: 97-07,9 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHVWTKU _ x=;< G9BG=H=J9o ecgj1 _ {CK <9=;<Ho fjcl AA _ j?0 8=9@97HF=7 GHF9B;H< ^69HK99B 7C=@ 5B8 7CBH57HG_ _ sF99D5;9 8=GH5B79o feAA _ 0tueihjdekhfdelee _ *FC8I7H =B 577CF85B79 HC yus kehhjbf 5J5=@56@9 _ -C7?9HG 5J5=@56@9

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 425 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 25 100 112 124 6 144 K AK A G K G K VWK February 1996 TT 425 N, TD 425 N, DT 425 N

tt 95 n 12

Abstract: TT430 TT 56 N 1200
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 430 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 25 100 112 124 6 144 K AK A G K G K VWK February 1996 TT 430 N,TD 430 N, DT 430 N Elektrische Eigenschaften

tt 500 n 14

Abstract: 1tt500 ctt500
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 500 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 112 6 144 100 25 124 K AK A G K G K VWK February 1996 TT 500 N Elektrische Eigenschaften

kl3 ox

Contextual Info: KO R^kb^l Kn`4RgZi2bg S^kfbgZe Sri^.c~{<7K/1 RmZg]Zk].ymJ/ FEASTQER 63 Dbk^\mer fhngmZ[e^ hg ikbgm^] \bk\nbm [hZk] pbmahnm ahe]^kl3 73 RfZee^k ehp ikh_be^ lbs^l maZg hk]bgZkr \ZiZ\bmhkl3 83 S^kfbgZe liZ\bg` _bq^] Zm 65ff _hk OC [hZk] ien` bg3 93 Aenfbgnf \Zl^ ]^lb`g^] ^qiehlbhg2ikhh_ o^gm3

chn 539

Abstract: chn 537 chn 637 955 539 ic cn 7555 CQC57556556 XISO69556 kl 668 A5655 85VDC
Contextual Info: 8E1},-4~,-4/ .HF9>F4HF9>FA/ :7;7/@A>3 =<C3> >39/D 4IFSTQIR Y :A mqcn]bcha ][j[\cfcns Y 6 Filg A ]ih`caol[ncih Y 7KV ^c_f_]nlc] mnl_hanb .\_nq_h ]icf [h^ ]ihn[]nm/ Y Sfcg mct_.qc^nb :gg1b_cabn 673:gg/ Y Hcab m_hmcncp_? 675gW Y Ehpclihg_hn[f `lc_h^fs jli^o]n [p[cf[\f_

Contextual Info: LD42_ _50 LD47_ _50 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Module 500 Amperes/1600 Volts OUTLINE DRAWING M10 THD M10 THD M10 THD M H K J R N A U U 4K 5G P 7K 6G LD42_ _50, LD47_ _50 SCR/Diode POW-R-BLOK™ Module

2SD976

Abstract: 2SD976A
Contextual Info: 2SD976,2SD976A V lJ =1 > NPN = S IL IC O N NPN T R IP L E D IF F U S E D _ T V 7k ¥ i i ì é 3ttì*ffi POW ER S W IT C H IN G T V H O R IZ O N T A L D E F L E C T IO N O U T P U T 1 . "< — X ! B a s e 2. ^ v -9 9 C o lle c to r 7 7 > V ( F la n g e )

b1116a

Contextual Info: A ffig g i m _ s / 1 } D O N a Jì&£fe 0 Z Ó 8 2 0 PS N O . 2 94. 12. 2 1 3 5 1 6 0 3 95. 3 5 9 7 5 5. 1 C m s « f i m *e ' e a Ì I Ì É i s ì t *n 'M i TfT LU 7K S? — .— 4 1# ± O . 1 54 ±o. 1 4 7 .8 ± 0 .0 5 4 4 .6 OiD -H . in OCM om

Contextual Info: 19 STICK > ì) NOTES. L ^7~ yzfit&)o BOTH ENDS WI TH C A P S . 2 . M : 600±2 TOTAL LENGTH 3 „ r a jp : 0 „6 ± 0 „2 THICKNESS s < oc Q < CJ KTi I5 I80 5 3 4 8 6 - I809 C_) ÛC GENERAL TOLERANCES QUANTITY tin M ATERIAL :7KUMk£-JL 00 z o STICK 00

GV285

Abstract: WB2F ZX 27s GCYK RWV73 3183B kd-153 STRZ 37XE1 u286
Contextual Info: r B^bZch^dch r PeZX^[^XVi^dch K R GV9U27S Mlbga_rmp ? I AQU PZg^Zh Smucp amlqsknrgml GV9U?Ennpmv3 8Y1 GV9U27S?Ennpmv3 83:Y1 GV;U2M?Ennpmv3 73<Y1 GV;U?Ennpmv3 839Y1 GV;U27S?Ennpmv3 9Y1 GV;[2M?Ennpmv3 8Y1 GV;[?Ennpmv3 9Y1 GV;[27S?Ennpmv3 9Y -79XHG. GV9U?Ennpmv3 ;XE1 GV9U27S?Ennpmv3 <XE1 GV;U2M?Ennpmv3 :39XE1 GV;U?Ennpmv3 ;3=XE1

W001

Contextual Info: SKM 800 GA 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

Dow Corning SI 340

Abstract: RPS 250
Contextual Info: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • High overload capability • Easy mounting • Low thermal radiation of the case Developed for specific applications such as railroad electrical traction, this series can bear short overloads

sfernice RESISTOR RPS 250

Abstract: RPS 250
Contextual Info: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • High overload capability • Easy mounting • Low thermal radiation of the case Developed for specific applications such as railroad electrical traction, this series can bear short overloads as high as fifteen