A5LC Search Results

Contextual Info: IDT7130SA/LA IDT7140SA/LA CMOS DUAL-PORT RAM 8K 1Kx 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns (max.) —Commercial: 25/35/55/100ns (max.) —Commercial: 20ns 7130 inPLCC and TQFP • Low-power operation

Contextual Info: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port

DTC144EU T107

Contextual Info: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/DTC144TV h 7 > y X $ /Transistors DTC144EU/DTC144EK/DTC144ES DTC144EF/DTC144EL/DTC144EA DTC144EV 7 -^/Transistor Switch Digital Transistors Includes Resistors • W f^ fjilS l/ D im en sio n s (U n it: mm)

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Contextual Info: :8.18,0 =;>;3CDA7 :;9: @?F7A A7<3G 8KHVWTKU V her GK=H7<=B; 75D56=@=HM V i?1 8=9@97HF=7 GHF9B;H< _69HK99B 7C=@ 5B8 7CBH57HG` V t@5GG w =BGI@5H=CB 5J5=@56@9 V hAA 7CBH57H ;5D 5J5=@56@9 V vBJ=FCBA9BH5@ :F=9B8@M DFC8I7H _-Cy. 7CAD@=5BH` V *IH@=B9 u=A9BG=CBGo _jecj L hicj L jfce` AA

IDT7M135

Abstract: IDT7M134 IDT7M145 IDT7M135S IDT7M144 7M135 R270LC
Contextual Info: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • ■ • • • • • • • • High-density 64K /128K C M O S Dual-Port RAM modules 16K x 8 (ID T 7 M 1 3 5 ) or 8K x 8 (ID T7M 134)option

A5H9

Abstract: cibh ge ecm ICME 2VLE C58A 8GRE1
Contextual Info: 97.07,. <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT V her GK=H7<=B; 75D56=@=HM w=@9 ~Ccovfhijfl V i?1 8=9@97HF=7 GHF9B;H< ^69HK99B 7C=@ 5B8 7CBH57HG_ V t@5GG w =BGI@5H=CB 5J5=@56@9 w=@9 ~Cco-jefjilgg V hAA 7CBH57H ;5D 5J5=@56@9 V vBJ=FCBA9BH5@ :F=9B8@M DFC8I7H ^-Cy. 7CAD@=5BH_

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8 Bits CMOS Dual Port Static Random Access Memory The Fujitsu MB8441 is a dual-port high-performance static random access memory SRAM organized as 8,192 words x 8 bits and fabricated using CMOS technology.

9ROM

Abstract: as db2 hf nu ATFB mwsj NJU6623A NJU6623AFG1 TQFP100 ZZ1SB350 ZZISEG52
Contextual Info: NJU6623A 15 «ri K'V h 7 i l h ' J 7 ^ X L C D a > h n - 7 K7^A* m s NJU6623AltJ51fj1 frayiWMtLCDTAn-jyW U t , fl 0 ttli» * » Œ a t> /W * i'Ay 7<ía* . ¡JUBA*' -YMîW/ i^U-ÍROM/ ram, * * f ->ram, i - m m m j y m v m . ftísm mx-mmztizto » » Œ a t V W m y Mn* lis

2R56A

Abstract: A2LC
Contextual Info: INTEGRATE» DEVICE 47E D El MÛ2S771 QÜ10Q17 7 Hi IST 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1001 1DT7M1003 T - % - 2 3 - 1 4 FEATURES DESCRIPTION: • High density 1M /512K C M O S dual-port static RAM module • Fast access times:

k 9707

Contextual Info: 97.07,. <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT V her GK=H7<=B; 75D56=@=HM w=@9 ~Ccovfhijfl V i?1 8=9@97HF=7 GHF9B;H< ^69HK99B 7C=@ 5B8 7CBH57HG_ V t@5GG w =BGI@5H=CB 5J5=@56@9 w=@9 ~Cco-jefjilgg V hAA 7CBH57H ;5D 5J5=@56@9 V vBJ=FCBA9BH5@ :F=9B8@M DFC8I7H ^-Cy. 7CAD@=5BH_

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AFAA

Abstract: HCJ 5B hcj 91 hcj 6a a5lc
Contextual Info: 97-07,9 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHVWTKU _ x=;< G9BG=H=J9o ecgj1 _ {CK <9=;<Ho fjcl AA _ j?0 8=9@97HF=7 GHF9B;H< ^69HK99B 7C=@ 5B8 7CBH57HG_ _ sF99D5;9 8=GH5B79o feAA _ 0tueihjdekhfdelee _ *FC8I7H =B 577CF85B79 HC yus kehhjbf 5J5=@56@9 _ -C7?9HG 5J5=@56@9