JB OL Search Results

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded

80C152

Abstract: 80C152JA
Contextual Info: irrte* 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80051 Architecture ■ 64KB Data Memory Addressing ■ Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB Mem ory Back-Up Use series • Developed for memory back-up, with load life of 1000 hours at +85°C. • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

DHA-PC36-3G

Abstract: DDK Connectors DHA 36 half-pitch 20 IEEE1284-C DHA-RC36-R132N DHA-36RB-405
Contextual Info: m >Jb Conforming to IEEE-1284-C Bitronics Connectors DHA Series EE-ODHA-2B APPLICATION Interface connections for printers and computers etc. per IEEE-1284-C Bitronics standard. FEATURES • Space saving 1.27mm .050" centerline • Highly-reliable, scoop-proof cantilever contact design

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB xtxcK xcon M em ory Back-U p Use • Developed for memory back-up, with load life of 1000 hours at + 85"C . • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

80C152JA

Abstract: 80C152 80C152JC 80C51 83C152JA 83C152JC
Contextual Info: i n t o i P W ilL D fifiJD R IÄ lR Y 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available Superset of 80C51 Architecture ■ 64KB Data Memory Addressing Multi-Protocol Serial Communication

83C152JA

Abstract: JC JB jt
Contextual Info: ß ff ig y iM iß O A B n f 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80C51 Architecture ■ 64KB Data Memory Addressing ■ Multi-Protocol Serial Communication

Contextual Info: 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ ■ Superset of 80C51 Architecture Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max — SDLC/HDLC Only — CSMA/CD and SDLC/HDLC

Contextual Info: _ bq2090 Q jB E N C H M A R Q Gas Gauge 1CWith SMBus-Uke Interface Features General Description >- Provides conservative and repeatable m easurem ent of available charge in NiCd, NiMH, and Lithium Ion rechargeable batteries The bq2090 G as G auge IC W ith

62320 rectifier

Abstract: e62320
Contextual Info: I Bulletin 12715 rev. E 0 8 /97 International IQR Rectifier m b & jb series SINGLE PHASE BRIDGE Power Modules 10 A 25 A 35 A Features • Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package, electrically insulated case

S0433

Abstract: transistor DAG
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D □S0433Ö 00D3bS3 2 «ALGR T - 9 -ol P R O C E S S B JB Process BJB NPN High-Speed Switching Transistor Process BJB is a double-diffused epitaxial planar NPN silicon device. It is designed to be used in high­ speed, medium-current switching applications.

Contextual Info: ireserved. Property nf BERC ELECTRONES CnpyngH BERG ELECTRONES NC. From the proprietor. Reproduction or Issue 1s third puriles In an; whatever Is not permitted vlthoirl vrflten euthmty Ml rights strictly Form jB E B S Ö n g g g a stdctemsnt rsasrvse. Propriété

Contextual Info: CD54HC30, CD74HC30, CD74HCT30 Jb Tfxas In s t r u m e n t s Data sheet acquired from Harris Sem iconductor , . SCHS121 , _ . , High Speed CMOS Logic 8-lnput NAND Gate August 1997 Features Description • Buffered Inputs The Harris CD74HC30, CD74HCT30, each contain an 8-input

Contextual Info: Assembly Instructions J lohlNSOIN Com ponents INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST MMCX RIGHT ANGLE PLUG FOR .086 (2.18) SEMI-RIGID CABLE CABLE 135-3693-101 J EN n —1 .110 AD / 9' ] JB/ )L ( J /U J Y 1. Identify piece parts. (2 piece parts)

DM54ALS390

Abstract: DM54ALS390J DM74ALS DM74ALS390M DM74ALS390N J16A M16A N16A
Contextual Info: DM54ALS390/DM74ALS390 r jÇ I National PRELIMINARY /jb/m Semiconductor Æ Æ Corporation DM54ALS390/DM74ALS390 Dual 4-Bit Decade Counters General Description Features Each of these monolithic counters contains eight masterslave flip-flops and additional gating to implement two independent four bit counters in a single package.

2C5339

Abstract: 2C6193
Contextual Info: P P C PRODUCTS CORP SSE D ta jb lll OOOOÖ'iD T • ! 5-A NPN Power Transistor Chips 2C5339 • T -lV O S t CHIP TYPE: AL FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector ■ Gold - 3,000 A Nominal

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS JB x tx c k x c o x t Memory Back-U p Use series StiCvOYdVO • Developed for memory back-up, with load life of 1000 hours at +85°C. • Superior to electric double layer type capacitors in the following characteristics: • Better voltage maintenance.

Contextual Info: 1 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST GP 00 LTR DESCRIPTION DATE REVISED PER EC 0 5 1 1 - 0 0 8 9 - 0 4 A DWN D JB BK 23MARO4 MATERIAL: HOUSING - HTN NYLON, BLACK,

T500N

Contextual Info: XRD9814/XRD9816 Preliminary 3-Channel 14/16-Bit Linear CC D /C IS Sensor Signal Processors JB* EXAR May 1999-1 FEATURES • • • • • • • • • • • • 16-Bit A/D Converter XRD9816 No Missing Codes Triple-Channel, 2.5 MSPS Color Scan Mode

osram valves

Contextual Info: < « s M a d e in Lngïand. f"ml ITL l|jB f7 1 "IMS!. illustrating Type GUI . 7. . M a xim um Dimensioni, . Overall length including p in s 110 m /m . Diameter of bulb 45 m /m . TYPE GUI TYPE GIT5 HOT CATHODE MERCURY VAPOUR RECTIFYING VALVES (H alf W ave).

"multiplier accumulator"

Abstract: 64 bit booth multiplier 16 bit multiplier
Contextual Info: b »V2 o < i 5 *J TACT1010-65E 16-BIT BY 16-BIT MULTIPLIER/ACCUMULATOR 361 i D 2834, DECEMBER 1986 7 - 7^ • jb OR N DUAL-IN-LINE PACKAGE 16-Bit by 16-Bit Parallel Multiplication/Accumulation TOP VIEW • 35-Bit-Wide Accumulator • Inputs are TTL-Voltage Compatible

sample and hold amplifier

Contextual Info: 'jB l 2 1993 B U R R -B R O W N • M SHC5320 l % High Speed Bipolar Monolithic SAMPLE/HOLD AMPLIFIER FEATURES DESCRIPTION • ACQUISITION TIME TO 0.01%: 1.5^s max The SHC5320 is a bipolar monolithic sample/hold circuit designed for use in precision high-speed data

Contextual Info: TOSHIBA 2SC5150 TOSHIBA TANSI5TOR 2 SILICON NPN TRIPLE DIFFUSED MESA TYPE S C 5 1 5 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, U n it in mm COLOR TV. 15.5 + 0-5 HIGH SPEED SWITCHING APPLICATIONS. • H ig h Voltage : V£ jb q = 1700V • Low Satu ratio n Voltage