JAN21 Search Results

FS1-R26-3001

Abstract: SFF-8086 FS1-R26-2001 SFF8086
Contextual Info: 7 8 6 5 1.14 MIN 1 2 3 4 13.39±0.10 REVISIONS 11.50 11.80±0.10 REV. 8.60 DESCRIPTION ECN DATE APPROVED C PROPOSAL JAN21/07 ML D E TOLERANCE ADDED TO LOCATION PIN FS1-R26-3001 ADDED FEB27/07 ZLJ F G H J APR05/07 ZLJ DIAM. PEG DIM'S. ADDED, TOLERANCE ADDED TO .472 APR09/07

Q62702-F1594

Abstract: transistor marking RHs
Contextual Info: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-Z2035

Abstract: VPS05163
Contextual Info: PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage 4 • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP 3 2 1 Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C 3=E VPS05163

SG101

Abstract: M38510/10105 JAN2101AJ M38510 SG2101AJ 10105bea SG2101 sg m38510
Contextual Info: SG2101A ADDENDUM TO SG101A DATA SHEET SILICON GENERAL DUAL OPERATION AL AMPLIFIERS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same

Contextual Info: A D B REVISIONS ECN, ERN NO. SYM ZONE .650±.01 5 [16.51 ±0.38] G H J 1,108± .015 [28.1 4±0.38] TOP LED 1 TOP LED 2 ADD DWV Sc OPERATING TEMP. JAN. 79, 72 L.CHAN ADD SHIELD TAIL DIM. AUG. 19, 13 L.CHAN ADD TOLERANCE EOR CUT-OUT AUG. 30, 13 L.CHAN r \ j

IC 2272

Abstract: Q62702-F1601 GMA marking
Contextual Info: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

101M

Contextual Info: 1. M echanical D im en sions: 2. S ch em a tic: 1 O- c \ 5.40 2 o- 3. E lectrica l SIDE VIEW S p ecifica tio n s: OCL: 100uH±20% I.O KH z 1V DCR: 0.300 Ohms Max IDC: 1.05Adc Max Notes! 1. S a ld c rn b ilrty : L e n d s s h a ll m e e t M IL - 5 T D - 2 0 2 G ,

Contextual Info: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E

sg2101AF

Abstract: 10105 SG101A
Contextual Info: SG2101A 5IUCDN ADD ENDU M TO SG101A DATA SHEET ŒNERAL DUAL OPERATIONAL AMPLIFIERS UNEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same package. '

42RA

Contextual Info: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E

BFP 181R

Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Contextual Info: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

SG-101

Contextual Info: SG2101A SILICON ADDENDUM TO SG101A DATA SHEET GENERAL DUAL OPERATIONAL AMPLIFIERS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same package. •

Contextual Info: R E V IS IO N S SYM Z O N E F G H E C N , ERN NO. APPRD. DATE SEP PROPOSAL 1 3 /1 2 A .G . ADD DISTANCE BETWEEN PANEL A t& COW ECTOi .M A Y 0 6 /1 3 L .C H A N ADD OPERATING TEMPERATURE. L .C H A N M A Y 1 0 /1 3 GREEN 2-10 L^L 2-8 1- lO J + sJ -ll-B TOP 2-

26 pin ribbon cable connector female

Abstract: CONNECTOR 5 PIN pitch 2.54mm 70400A
Contextual Info: Molex Welcome Connectors Interconnects electrical,electronic, fiber .able, SIMM, DIMM, PLCC, I/O, Input/output, Microminature, industrial Print Search By: Datasheet Ribbon Cable and Wire Trap Connectors 2.54mm .100" C-Grid SL" Insulation Displacement Connector Assembly,

TNI30BF

Contextual Info: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C SUNLED WALNUT.CA.91789, U.S.A. E-MAIL: sales@sunled.com URL ADDRESS: http://www.sunled.com TNI30BF 3mm Infrared Emitting Diode *Blue transparent Lens "k Î io Y— J5 j 3(.118) Absolute Maximum Ratings (Ta = 25 C)

TNI30W

Abstract: SunLED
Contextual Info: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C SUNLED WALNUT.CA.91789, U.S.A. E-MAIL: sales@sunled.com URL ADDRESS: http://www.sunled.com TNI30W 3mm Infrared Emitting Diode * Water Clear Lens "k Î io Y— .3 j 3(.118) Absolute Maximum Ratings (Ta = 25 C) Power Dissipation

Contextual Info: 3. E le c tr ic a l 1. D im e n s io n s : — 0.50 S p e c ific a tio n s : 2 5 °C solation Voltage: Max — " X' rx ^ O •- 4H H H f -in0.030 0.020 0.01 6 1500 VAC Turns Ratio: 1 6 — 14 :(1 Turns Ratio: (1 1—9 ) : ( 6 —7 —S)=1 :2.41 CT ±3%

Contextual Info: 友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150102 Issue Date Jan-21-2015 LR1108G SOT-25 Separate into LR1108G/LR1108EG Page 1 of 2 變更主旨 TITLE : LR1108G SOT-25區分為LR1108EG及LR1108G.

SG101

Contextual Info: SG2101A SILICON ADDENDUM TO SG101A DATA SHEET GENERAL DUAL OPERATIONAL AMPLIFIERS LINEAR IN TEG R ATED CIRCUITS DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same package.