JA SOT23 Search Results

Contextual Info: LD2981 SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT . ULTRA LOW DROPOUT VOLTAGE 0.2V AT 100mA LOAD, 7mV AT 1mA LOAD . VERY LOW QUIESCENT CURRENT (MAX 1(jA WHEN IS IN SHUTDOWN MODE) . OUTPUT CURRENT UP TO 100 mA . LOGIC-CONTROLLED ELECTRONIC SHUTDOWN

Marking JA

Abstract: KTK951S
Contextual Info: SEMICONDUCTOR KTK951S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. ① ② A JE 2 J 1 Item Marking Description Device Mark J KTK951S IDSS Grade E C, D, E * Lot No. JA 2009. 1st Week [J:1st Character, A:2nd Character]

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

MMBD6050

Contextual Info: Zowie Technology Corporation Switching Diode 3 MMBD6050 1 CATHODE ANODE 3 1 2 SOT-23 MAXIMUM RATINGS Value Symbol Rating Unit Reverse Voltage VR 70 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ LD2979 SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT . V E R Y LOW DROPOUT VOLTAGE (0.2V TYP. AT 50mA LOAD) . VERY LOW QUIESCENT CURRENT (TYP. 500|jA AT50mA LOAD) . OUTPUT CURRENT UP TO 50 mA . LOGIC-CONTROLLED ELECTRONIC

SIEMENS 5SN

Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

Contextual Info: r r u n m TECHNOLOGY F€fflTUR€S LT1610 1.7MHz, Single Cell M icropow er D C /D C C onverter DCSCRIPTIOn • Uses Tiny Capacitors and Inductor ■ Internally Compensated ■ Low Quiescent Current: 30|jA ■ Operates with V im as Low as 1V ■ 3V at 30mA from a Single Cell

Contextual Info: LTC1665/LTC1660 u f m TECHNOLOGY Micropower O ctal 8-Bit and 10-Bit DACs FCRTURCS DCSCRIPTIOn • Tiny: 8 DACs in the Board Space of an SO-8 ■ Micropower: 56|jA per DAC Plus 1|oA Sleep Mode for Extended Battery Life ■ Pin Compatible 8-Bit LTC1665 and 10-Bit LTC1660

marking Z2

Abstract: BZX84C5V1 BZX84C5V6
Contextual Info: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)

FMMV105G

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

marking z7

Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4

zxtn25012efh

Abstract: transistor 1.25W
Contextual Info: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

marking 1a8

Abstract: ZXTN25015DFH ZXTN25015DFHTA ZXTP25015DFH ZXTN
Contextual Info: ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC cont = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m⍀ PD = 1.25W Complementary part number ZXTP25015DFH Description C Advanced process capability and package design have been used to

ZXTN25020DFH

Abstract: ZXTN25020DFHTA ZXTP25020DFH
Contextual Info: ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV BR CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m⍀ typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description C Advanced process capability and package design have been used to

ZXTN25100DFH

Abstract: ZXTN25100DFHTA ZXTP25100DFH
Contextual Info: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to

Contextual Info: >ki>jxiyki /9-0458; Rev 7/ 9/96 Low-Cost, Micropower, Precision, 3-Terminal, 1.2V Voltage Reference General Description The MAX6120 operates from a supply voltage as low as 2.4V, and initial accuracy is ±1% for the SOT23 pack­ age. Output voltage temperature coefficient is typically

JJ SOT23-3

Abstract: EIA481-1 MAX512 MAX513 MAX6120 MAX6120ESA MAX6120EUR MAX6520 BB51
Contextual Info: 79-0458; R ev 7; 9 /9 6 j v \ j \ y i \ j v \ Low-Cost, Micropower, Precision, 3-Terminal, 1.2V Voltage Reference Features ♦ 3-Pin SOT23 Package ♦ Supply Current Independent of Input Voltage Over Temperature ♦ SOpA Supply Current ♦ 2.4V to 11V Input Voltage Range

Contextual Info: 19-1089; Rev 2; 8/97 Single/Dual/Quad, W ide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps F e a tu re s ♦ 5-Pin SOT23-5 Package MAX4130 With their rail-to-rail inp ut co m m on-m ode range and output swing, the M AX4130-M AX4134 are ideal for lowvoltage, single-supply operation. Although the minimum

ZXTN2018F

Abstract: ZXTN2018FTA ZXTP2027F marking 851
Contextual Info: ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V BR CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1A PD = 1.2W Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to

TS16949

Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to