J3 PACKAGE Search Results

efch1950

Abstract: F330 EFCHJ897MMT1 F600 EFCH1575MTE3 EFCH906MMTEK EFCHJ1842MT2 EFCHJ2140MN4 EFCHJ942MMT2 EFCHJ960MT2
Contextual Info: SAW Devices SAW Devices Products Part No. System Package EFSD836MB111 AMPS ND EFSD836MC111 AMPS C EFCHJ2140MN4 W-CDMA Rx J1 EFCHJ897MMT1 E-GSM Tx J3 EFCHJ942MMT2 E-GSM Rx J3 EFCHJ1842MT2 DCS Rx J3 EFCHJ960MT2 PCS Rx J4 EFCHJ1575MT1 GPS J4 EFCH1950MTE1 W-CDMATx

marking J3 sot23

Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
Contextual Info: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

TE28F640J3C-120

Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Contextual Info: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current

DP5Z1MM8NKH3

Abstract: 00FIH
Contextual Info: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

DP5Z1MM16PH3

Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Contextual Info: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

Flash SIMM 80

Abstract: 4mx32 80 pin simm flash 8mx32 80-pin 4Mx8 8mx32 simm 72 pin 4mx32 80-pin DQ24-31 intel flash simm A0-A21
Contextual Info: WED7F324XDNSN White Electronic Designs 4Mx32 / 2x4Mx32; INTEL J3 BASED, FLASH MODULE FEATURES FIG. 1 BLOCK DIAGRAMS  4Mx32 and 2x4mx32 Densities  Based on Intel's Strataflash J3 family of Flash Devices WED7F324DNSN: 4Mx32 80 PIN SIMM A0-A21 E0# G#

80 pin simm flash

Abstract: larry PROGRAM WED7F324XDNSN 80pin-SIMM Flash SIMM 80 80 pin simm flash 32mb
Contextual Info: WED7F324XDNSN 4Mx32 / 2x4Mx32; INTEL J3 BASED, FLASH MODULE FEATURES FIG. 1 • 4Mx32 and 2x4mx32 Densities BLOCK DIAGRAMS • Based on Intel's Strataflash J3 family of Flash Devices • E28F320J3 WED7F324DNSN: 4Mx32 80 PIN SIMM • (32) 128Kb Erase Blocks (Symetrical)

80 pin simm flash

Abstract: 4mx32 Flash SIMM 80 A0-A21 WED7F324XDNSN 4mx32 80-pin 8mx32 80-pin
Contextual Info: White Electronic Designs WED7F324XDNSN 4Mx32 / 2x4Mx32; INTEL J3 BASED, FLASH MODULE FEATURES FIG. 1 BLOCK DIAGRAMS „ 4Mx32 and 2x4mx32 Densities „ Based on Intel's Strataflash J3 family of Flash Devices WED7F324DNSN: 4Mx32 80 PIN SIMM A0-A21 E0# G# „ E28F320J3

TMS34061FNL

Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
Contextual Info: SM J 3 4 0 1 0 GRAPHICS SYSTEM PROCESSOR NOVEMBER 1 98 8 - • Military Temperature . . . - 5 5 ° C to 12 5°C • Instruction Cycle Time: 200 ns . . . S M J3 4010-40 160 ns . . . S M J3 4010-50 REVISED SEPTEMBER 1989 GB PACKAGE 68-PIN GRID ARRAY TOP VIEW

Flash SIMM 80 64mb

Abstract: 80 pin simm flash E28F640 80 pin simm flash 64mb
Contextual Info: EDI7F328XDNSN EDI7F2328XDNSN White Electronic ADVANCED* 8M x 32 / 2 x 8Mx 32; INTEL J3 BASED, FLASH FEATURES GENERAL DESCRIPTION „ 8M x 32 and 2 x 8M x 32 Densities „ Based on Intel’s Strataflash J3 family of Flash Devices The EDI7F328XDNSN and EDI7F2328XDNSN are

PWM-84C

Abstract: digital phase shifters 30 MHz phase shifters phase shifters 4 bit digital to pwm converter
Contextual Info: PWM-84C Series PHASE SHIFTERS, DIGITAL 30 to 2500 MHz / 360 Range / 1.4 Resolution / 8-bit TTL Input / Monotonic / SMA Connectors Connector J3 Pinout J3 Pin Function PRINCIPAL SPECIFICATIONS Ideal phase characteristic 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Bit 8 MSB

strataflash 512 p30

Abstract: Spansion Intel StrataFlash Memory j3 Spansion S29GL256N Intel J3 memory TSOP 56 SPANSION Intel SCSP S29GL-N S29GL-A S29GL-M
Contextual Info: Migrating to the Spansion S29GL-N Flash Family from Intel StrataFlash Memory J3 /Embedded Memory (P30) Devices Application Note Introduction This application note provides conversion guidelines to Spansion™ S29GL-N Flash Family devices from Intel StrataFlash® Memory (J3) and Intel StrataFlash® Embedded Memory (P30) devices.

1230A1

Contextual Info: 16 Megabit FLASH EEPROM D E N S E - P A C M I C K OS V S T M S \í DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 AD VAN CED IN FO RM ATIO N DESCRIPTION: The DP5Z1MM16PY/Í3/H3/J3/DP5Z1MW16PA3 "SLCC" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'

J308

Abstract: J309 J310
Contextual Info: E SOLI» STATE 3875081 □1 G E S O LID DE P 3575051 OOllCm? □ 01E STATE 11047 D J3 0 8 -J3 1 0 Ü308-J310 N-Channel JF E T High Frequency Amplifier FEATURES APPLICATIONS • • • • • • V H F/U H F Am plifiers • O scillators • M ixers Industry Standard Part In L ow C o st P lastic Package

DAM-15PA

Abstract: DAM-15S
Contextual Info: PWM-84C Series_PHASE SHIFTERS, DIGITAL 30 to 2 5 0 0 M H z / 360' R a n g e /1.4" Resolution/ 8-bit TTL Input / Monotonie/ SMA Connectors Connector J3 Pinout J3 Pin 1 Bit 8 MSB 2 Bit 7 3 Bit 6 4 Bit 5 5 Bit 4 6 Bit 3 7 Bit 2 8 Bit 1 (LSB) 9 (NC) -15V

Contextual Info: Package outline BGA582: plastic ball grid array package; 582 balls; with stiffner ring SOT1162-1 B D D1 J1 J3 A ball A1 index area J2 E1 E A A2 A1 detail X J3 e1 e AF AD AC AA V R M J Y U P L H F C E 1/2 e ∅v ∅w b AB e W T e2 N 1/2 e K G D B 1 2 4 3 5

kt201

Contextual Info: 2.0x1.2mm SMD LED WITH CERAMIC SUBSTRATE PRELIMINARY SPEC Part Number: KT-2012SYS-J3 Super Bright Yellow Features z Dimensions:2.0mmX1.2mmX0.9mm. z Ceramic package with silicone encapsulation. z Ideal for backlight and indicator. z Package : 2000pcs / reel.

Contextual Info: OVAL SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description zOutstanding material efficiency. The Hyper Red device is based on light emitting diode chip zReliable and rugged. made from AlGaInP. zRoHS compliant. Package Dimensions

Contextual Info: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description  Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip  Reliable and rugged. made from AlGaInP.  RoHS compliant. Package Dimensions

Contextual Info: T-1 3mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7104SEC/J3 Hyper Red Features Description zLow power consumption. The Hyper Red device is based on light emitting diode chip zPopular T-1 diameter package. made from AlGaInP. zGeneral purpose leads.

Contextual Info: OVAL SOLID STATE LAMP Part Number: L-5603SIDL/SD-J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions

KT2012

Abstract: JESD22-A120 KT201
Contextual Info: 2.0x1.2mm SMD LED WITH CERAMIC SUBSTRATE PRELIMINARY SPEC Part Number: KT-2012SES-J3 Hyper Orange Features z Dimensions:2.0mmX1.2mmX0.9mm. z Ceramic package with silicone encapsulation. z Ideal for backlight and indicator. z Package : 2000pcs / reel. z Moisture sensitivity level : level 2a.

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions