J3 DIODE Search Results

TE28F640J3C-120

Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Contextual Info: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current

DP5Z1MM8NKH3

Abstract: 00FIH
Contextual Info: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

DP5Z1MM16PH3

Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Contextual Info: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

1117 S Transistor

Abstract: TOSHIBA bat Transistor b 1117
Contextual Info: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode

100C1032

Abstract: BNC T connectors INSERTION LOSS 100C10
Contextual Info: F E AT U R E S MODEL NO. 100C10 3 2 1 0 0 - 14 0 0 MHz 0.5 dB Insertion Loss 20 Watts CW TTL Driver SMA, BNC or TNC Connectors SP2T Medium Power PIN Diode SP2T 1.00±.03 2.75±.03 PART IDENTIFICATION 2.250 . 25 .50 J1 J3 J2 1.75 .06 . 25 J3 +5V CONT 1.250

GT10J312

Abstract: CP20A
Contextual Info: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode

30A18

Contextual Info: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'

Contextual Info: OVAL SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description zOutstanding material efficiency. The Hyper Red device is based on light emitting diode chip zReliable and rugged. made from AlGaInP. zRoHS compliant. Package Dimensions

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 PRELIMINARY SPEC Super Bright Yellow Features Description zOutstanding material efficiency. The Super Bright Yellow device is based on light emitting zReliable and rugged. diode chip made from AlGaInP. zRoHS compliant.

Contextual Info: T-1 3mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7104SEC/J3 Hyper Red Features Description zLow power consumption. The Hyper Red device is based on light emitting diode chip zPopular T-1 diameter package. made from AlGaInP. zGeneral purpose leads.

Contextual Info: 5.0X6.0mm SURFACE MOUNT LED LAMP PRELIMINARY SPEC Part Number: AA5060SEC/J3 Hyper Orange Features Description z Single color. The Hyper Orange device is based on light emitting diode z Suitable for all SMT assembly and solder process. chip made from AlInGaP.

Contextual Info: T-1 3/4 5mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7083SED/J3 Hyper Red Features Description zOutstanding material efficiency. The Hyper Red device is based on light emitting diode chip zReliable and rugged. made from AlGaInP. zRoHS compliant.

WP9294SEC

Abstract: "orange led" 5mm
Contextual Info: 5mm ROUND LED LAMP PRELIMINARY SPEC Part Number: WP9294SEC/J3 Hyper Orange Features Description z High luminous white emission The Hyper Orange device is based on light emitting diode z Low power consumption. chip made from AlInGaP. z General purpose leads.

Contextual Info: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7083SYD/J3 PRELIMINARY SPEC Super Bright Yellow Features Description zOutstanding material efficiency. The Super Bright Yellow device is based on light emitting zReliable and rugged. diode chip made from AlGaInP.

Contextual Info: T-1 3mm SOLID STATE LAMP Part Number: WP7104SYC/J3 PRELIMINARY SPEC Super Bright Yellow Features Description z Low power consumption. The Super Bright Yellow device is based on light emitting z Popular T-1 diameter package. diode chip made from AlGaInP.

5mm white super bright led

Contextual Info: 5mm ROUND LED LAMP Part Number: WP9294SYC/J3 PRELIMINARY SPEC Super Bright Yellow Features Description z High luminous white emission The Super Bright Yellow device is based on light emitting z Low power consumption. diode chip made from AlInGaP. z General purpose leads.

Contextual Info: 5.0X6.0mm SURFACE MOUNT LED LAMP Part Number: AA5060SYC/J3 PRELIMINARY SPEC Super Bright Yellow Features Description z Single color. The Super Bright Yellow device is based on light emitting z Suitable for all SMT assembly and solder process. diode chip made from AlInGaP.

Contextual Info: HITACHI/ OPTOELECTRONICS S1E t • IMIbSOS QD1171D Mb? BiHITM HE1301R- T-4 T-J3 Infrared Em itting D iod es (IRED) Description HE1301R is a 1.3 /¿m InGaAsP infrared emit­ ting diode with double heterojunction structure, which provides high speçd response.

9294

Abstract: L9294 L929
Contextual Info: 5mm ROUND LED LAMP PRELIMINARY SPEC Part Number: L-9294SEC-J3 Hyper Orange Features Description z High luminous white emission The Hyper Orange device is based on light emitting diode z Low power consumption. chip made from AlInGaP. z General purpose leads.

Contextual Info: 5.0X6.0mm SURFACE MOUNT LED LAMP Part Number: AA5060SES/J3 Hyper Red Features Description z Single color. The Hyper Red device is based on light emitting diode chip z Suitable for all SMT assembly and solder process. made from AlGaInP. z Available on tape and reel.

j3 ic

Contextual Info: T-1 3/4 5mm HOUSING FOR LED LAMP PRELIMINARY SPEC Part Number: WP7113WYP/SEC/J3 Hyper Orange Features Description z Outstanding material efficiency. The Hyper Orange device is based on light emitting diode z Reliable and rugged. chip made from AlInGaP. z Low current capability.

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APTD1608SEC/J3 Hyper Red Features Description z 1.6mmX0.8mm SMT LED, 0.95mm thickness. The Hyper Red device is based on light emitting diode chip z Low power consumption. made from AlGaInP. z Wide viewing angle. z Ideal for backlight and indicator.

Contextual Info: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7524SYC/J3 PRELIMINARY SPEC Super Bright Yellow Features Description z Low power consumption. The Super Bright Yellow device is based on light emitting z Popular T-1 3/4 diameter package. diode chip made from AlInGaP.

Contextual Info: T-1 3/4 5mm SOLID STATE LAMP Part Number: WP7113SYC/J3 PRELIMINARY SPEC Super Bright Yellow Features Description z Low power consumption. The Super Bright Yellow device is based on light emitting z Popular T-1 3/4 diameter package. diode chip made from AlGaInP.