J210 MARKING Search Results

transistor j210

Abstract: J210 J211 J212 marking J212
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212

SSTJ210

Abstract: J210
Contextual Info: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

2N5911

Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

"Z2" marking

Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

J210

Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Contextual Info: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

SSTJ211

Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

transistor j210

Abstract: J210 J211 J212 SSTJ211 SSTJ212
Contextual Info: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features

Siliconix JFETs Dual

Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
Contextual Info: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features

Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings

A5050

Abstract: A25100 A1831 A1231 A5062 A1527 A1237 A3775 A3181 a1535
Contextual Info: A COMPANY MODEL A W irewound Bobbin Resistors OF ULTRONIX Com m ercial/Industrial, Precision A xial Leaded, Sub-M iniature and M iniature FEATURES • • • • • • • All-welded construction Moisture-resistant encapsulation and/or molded polyester alkyd

Contextual Info: Extract from the online catalog PT 2X1-BE/FM Order No.: 2920036 Base element to accept a protective plug with diagnostic and status indicator for two signal wires with common reference potential.

J210

Contextual Info: Extract from the online catalog PT 1X2+F-BE/FM Order No.: 2920023 Base element to accept a protective plug with diagnostic and status indicator for one floating double wire, integrated spark gap to provide a

Contextual Info: Extract from the online catalog PT 2X1+F-BE/FM Order No.: 2920049 Base element to accept a protective plug with diagnostic and status indicator for two signal wires with common reference potential,

FZ 51

Abstract: HY 214A MC J13 "FZ 51" GK-60 GX90 GV 85 D 304 x FZ 5.1 BFP36
Contextual Info: Approve Sheet Part Number: 1.5SMCJ SERIES 3.DATA SHEET 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMC / DO-214AB VOLTAGE - 5.0 to 220 Volts 1500 Watt Peak Power Pulse Unit: inch mm .280 (7.11) .260 (6.60) .103 (2.62) .079 (2.00) .012 (.305)

J100

Abstract: J110 J120 "FZ 51" FZ 51 IHD-1-10 FZ 5.1 2326S K 644
Contextual Info: Approve Sheet Part Number: 3.0SMCJ SERIES 3.DATA SHEET 3.0SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMC / DO-214AB VOLTAGE - 5.0 to 220 Volts 3000 Watt Peak Power Pulse Unit: inch mm .280 (7.11) .260 (6.60) .103 (2.62) .079 (2.00) .012 (.305)

smd transistor j210

Abstract: J205 J206 430kHz SMD R220 transistor j210 TS615 TS616 TS616IDW TS616IDWT
Contextual Info: TS616 Dual Wide Band Operational Amplifier with High Output Current • ■ ■ ■ ■ ■ ■ ■ ■ Low noise: 2.5 nV/√Hz High output current: 420 mA Very low harmonic and intermodulation distortion High slew rate: 420 V/µs -3dB bandwidth: 40 MHz @ gain = 12 dB

Contextual Info: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on

smd transistor j210

Abstract: SMD R220 transistor j210 J205 J206 TS615 TS616
Contextual Info: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on

smd transistor j210

Abstract: SMD R220 J303 transistor j210 F2230 J207 J210 smd marking f2 J205 J206
Contextual Info: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5 nV/√Hz ■ High output current: 420 mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420 V/µs ■ -3dB bandwidth: 40 MHz @ gain = 12 dB on

gf 103 94vo

Abstract: J210A j170c bet GP 123 20/gf 103 94vo
Contextual Info: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.220 5.59 0.245(6.22) • Low profile package 0.108(2.75) • For surface mounted applications in order to optimize board space.

L 7 HL 33 GE 644

Abstract: J12A J11A mc 741 HY- 211 94V j43a hy 214 J180C J75A J220CA
Contextual Info: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief

MAX9590

Abstract: R20 marking C1608X7R1E104K MAX9590EVKIT MAX9590ETU J226 J236 TMK107BJ104K marking R10 10pin
Contextual Info: 19-0561; Rev 0; 5/06 MAX9590 Evaluation Kit/Evaluation System Features The MAX9590 evaluation kit EV kit is a fully assembled and tested circuit board that evaluates the MAX9590. The MAX9590 EV kit provides 14 programmable voltage references and 4 static voltage references for

marking code BEV

Abstract: J15-C L 7 HL 33 GE 644 J60A Bd 141 marking code GGt J36A BD 667 HY 400
Contextual Info: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.220 5.59 0.245(6.22) • Low profile package 0.108(2.75) • For surface mounted applications in order to optimize board space.

HY- 214 94V

Abstract: J45A J28CA j170ca HY- 211 94V J28C HY- 211 94Vo J15A J180A hy 211 94vo
Contextual Info: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.220 5.59 0.245(6.22) • Low profile package 0.108(2.75) • For surface mounted applications in order to optimize board space.