J210 EQUIVALENT Search Results

transistor j210

Abstract: J210 J211 J212 marking J212
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212

SS211

Abstract: ss 211
Contextual Info: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

SSTJ210

Abstract: J210
Contextual Info: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

2N5911

Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

"Z2" marking

Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

SST210-11

Abstract: FL-41 J210 SST212 SST210
Contextual Info: calocfic N-Channel JFET CORPORATION J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

Contextual Info: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

J210 equivalent

Contextual Info: J210 SERIES N-Channel JFETs flTSEconix in co rp o rated The J210 Series of n-channel JFETs provides good general purpose amplifiers for a wide range of test and Instrumentation applications. This series features low-leakage Iq s s < 100 pA , high gain (g*, > 7 mSfor

J210

Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Contextual Info: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

transistor j210

Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Contextual Info: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.

SSTJ211

Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

transistor j210

Abstract: J210 J211 J212 SSTJ211 SSTJ212
Contextual Info: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features

Siliconix JFETs Dual

Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
Contextual Info: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features

Siliconix AN104

Abstract: AN104 J210 J211 J212
Contextual Info: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features

J210 Replacement

Abstract: J210 J210 equivalent
Contextual Info: J210 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J210 FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

Siliconix Dual N-Channel JFETs

Abstract: J210 211 siliconix
Contextual Info: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.

Contextual Info: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS

low igss

Abstract: J212 J211 J210 transistor j210 J210 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

Contextual Info: J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS

Contextual Info: LSJ210 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J210 FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF

Contextual Info: J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

Contextual Info: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA

Contextual Info: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS