J177 TRANSISTOR Search Results

J174

Abstract: j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking
Contextual Info: Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information Information as of 2001-11-13 J174; J175; J176; J177; P-channel

EQUIVALENT FOR J175

Abstract: J175 EQUIVALENT FOR J174 J177 J176. P-CHANNEL. TO-92 J177 equivalent J174 equivalent J176 J174 EQUIVALENT FOR J176
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

j174 transistor

Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

j177 TRANSISTOR

Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

J175

Abstract: J174 J176 J177
Contextual Info: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

B53 transistor

Abstract: j177 TRANSISTOR J176 J177 equivalent SMPJ177 J177 PJ99 SMPJ176
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-53 B-53 01/99 J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

"P-Channel JFETs"

Abstract: 2N5116
Contextual Info: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92

S75 J175

Contextual Info: FM M J174 to FMMJ177 SOT23 P-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J174 FM M J175 FMMJ1 76 FM M J177 - S74 S75 S76 S77 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or Gate-Source Voltage 30V Continous Forward Gate Current

Contextual Info: J177-18 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)1.0n I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)135õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: J177 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)50m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V).8 I(DSS) Max. (A)20m

J174

Abstract: J176 MPF970 j177 J175 j175 motorola
Contextual Info: J174 thru J177* C A SE 29-04, STYLE 30 TO-92 TO-226AA f MAXIMUM RATINGS Rating Sym bol Value Unit Drain-Source Voltage Vd S 30 Vdc Drain-Gate Voltage Vdg 30 Vdc Gate-Source Voltage VGS 30 Vdc Gate Current Total Device Dissip ation Derate above 2 5 ’C <a

J174

Abstract: J177 J176 J175
Contextual Info: m bbS3*ì31 N AMER DOBMOtn 7DÖ « A P X PHILIPS/DISCRETE b ?E J174 TO 177 D P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel ju nction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc.

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

Contextual Info: B 53 9 -9 7 J1 7 6 J1 7 7 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • ANALOG SWITCHES A bsolute m axim um ratin gs at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

FMMJ174

Abstract: MJ176
Contextual Info: FMM J174 to FMMJ177 SOT23 P-CHAMNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM MJ174 FM MJ175 FM MJ176 FM MJ177 - S74 S75 S76 S77 ABSOLUTE MAXIMUM RATINGS at Tamb = 25°C Gate Drain or Gate-Source Voltage 30 V Continous Forward Gate Current

SD5200

Abstract: SST177 Amplifier k thermocouple texas j177 TRANSISTOR SD5400-2 ALD4201 74HC137 CS5525 CS5526 AN75
Contextual Info: AN75 Application Note Using the CS5525/CS5526 in Multiplexed Applications By Jerome Johnston The CS5525/CS5526 A/D converter is optimized for the measurement of thermocouples. It is designed with a single analog input, but includes four digital output pins to control analog switches and

Bsv80

Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78

BF991

Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485

PMBFJ174

Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number characteristics - RD S o n ^ max. (Q) ± V DS -IG max. max. (mA) min. (mA)

bfw11 jfet

Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72

2sj44

Abstract: IFP44 PJ99 j174 transistor
Contextual Info: G 30 9-97 PJ99 Process SILICON JUNCTION FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, Ts 10 mA +150°C -65°C to +175°C

Contextual Info: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5

2sj44

Abstract: J177 equivalent PJ99 j177 equivalent transistor
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-30 F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts