J1440 Search Results

WJ-A28-2

Contextual Info: u u J A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: <1.4:1 (TYP.) Outline Drawings

Contextual Info: SME900-17 SURFACE MOUNT MIXER FOR CELLULAR APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ RF 820 to 960 MHz LO 720 to 940 MHz IF 20 to 100 MHz HIGH 3IIP: +29 dBm TYPICAL LO DRIVE: +17 dBm (OTHER LEVELS AVAILABLE) NO INTERNAL SOLDER CONNECTIONS Outline Drawing Specifications*

SP-3383

Abstract: power supply AMPLIFIER 1800w AMPLIFIER 1800w SP338
Contextual Info: W a t k i n s - J o h n s o n : The Cel l E x t e n d e r s Power Am plifiers SA1068 CDMA 10.0-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module • 45 dB Gain PU B:+48 dBm atkm s-Johnsons SA 1068 Power W Amplifier provides exceptional Linearity for CDMA digital modulation

Contextual Info: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR CELLULAR AND PCS APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK EXCELLENT FLATNESS OVER TEMP 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Characteristics

Contextual Info: SR1020 PCS-BAND UPCONVERTER The SR1020 is a broadband PCS-band upconverter iff* ? with integral low phase noise synthesizer. Outline Drawing Specifications Characteristics Guaranteed Frequency* LO IF IF BW SSG Gain Flatness 1930-1945 MHz 2000-2015 MHz 70 MHz

RA-89-1

Abstract: 31.823
Contextual Info: uuU RA89-1 / SMRA89-1 10 to 500 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES: 30.0 dB TYP. HIGH OUTPUT POWER: +21.5 dBm (TYP.) HIGH THIRD ORDER I.P: +36 dBm (TYP.) LOW VSWR: <1.5:1 (TYP.) Outline Drawings

WJ-CA37

Abstract: bc 162 transistor WJ-A37
Contextual Info: uuU A37 / SMA37 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A 37 Specifications* 0 200

Contextual Info: uuU M8H-7 / M8HC-7 DOUBLE-BALANCED MIXER ♦ ♦ ♦ ♦ ♦ ♦ LO 2.0 TO 6.0 GHz RF 2.4 TO 6.0 GHz IF DC to 2000 MHz LO DRIVE+7 dBm NOMINAL HIGH ISOLATION 40 dB (TYP.) MIL-M-28837 EQUIVALENT LEVEL SCREENING AVAILABLE Outline Drawings M 8 H -7 ,2,3 Guaranteed Specifications1'2

Contextual Info: uud ICA1001 4.5 to 6.5 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER AMP AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED MULTIPLE ON-CHIP BIAS OPTIONS ICA1001 Chip Outline Guaranteed Specifications”

wj my63

Abstract: wj m63 wj M63C 0-S80 Y63c
Contextual Info: u u l M 6 3 /M 6 3 C M Y63 / M Y63C DOUBLE-BALANCED MIXER ♦ ♦ ♦ ♦ ♦ ♦ LO 2.5 TO 7.0 GHz RF 2.5 TO 5.5 GHz IF DC TO 1.5 GHz LO DRIVE +9 dBm NOMINAL) LOW NOISE FIGURE: 5.8 dB (TYP.) MIL-M-28837 EQUIVALENT LEVEL SCREENING AVAILABLE Outline Drawings

bc 149 transistor

Abstract: atic 144 WJ-CA45-1
Contextual Info: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11

WJ-CRA69

Abstract: WJ-RA69 cra69
Contextual Info: u u U RA69 / SMRA69 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABILITY IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 25.0 dB TYP. HIGH OUTPUT POWER: +23.0 dBm (TYP.) HIGH THIRD ORDER I.P.: +34 dBm (TYP.) Outline Drawings Specifications* RA69

Contextual Info: uuJ V1801-910 1780 to 1840 MHz LOW PHASE NOISE VCO FOR PCS BASE STATION APPLICATIONS ♦ PHASE NOISE: 110 dBc/Hz @ 10 KHz Offset ♦ FREQUENCY BAND: 60 MHz ♦ BUFFER AMPLIFIER INCLUDED r Specifications •" Outline Drawing Typical @ +25°C @ +25°C 1780 to 1840

TDA5100

Abstract: ALPs modulator TDA 1084 TDA series microcontroller IC free down toko rcl alps encoder pd alps encoder alps encoder 12 tss-3b 13.56Mhz class e power amplifier
Contextual Info: Wireless Components ASK/FSK Transmitter 868/433 MHz TDA 5100 Application Note Version 1.2, March 2000 Revision History Current Version: 1.2 as of 09.03.00 Previous Version: 1.1, September 1999 Page in previous Version Page (in current Version) Subjects (major changes since last revision)

Contextual Info: 2.0 to 8.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +11 V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED TWO ON-CHIP BIAS OPTIONS ICA1007 Chip Outline Guaranteed Specifications*

HMJ5

Contextual Info: HMJ5 WIDEBAND HIGH DYNAMIC RANGE FET MIXER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ RF: 40 to 1000 MHz LO: 30 to 900 MHz IF: 5 to 250 MHz LO DRIVE: +21 dBm NOM HIGH 3IIP: +38 dBm (TYP) DC POWER SUPPLY: 3V at 35 mA LOW COST SURFACE MOUNT J-LEAD PACKAGE e sst -T l

Contextual Info: ICA1008 i i 1 i • m m ¡1 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS

153456

Contextual Info: uuJ AH 2 Advanced Product Information H igh D ynam ic Range Am plifier Product Description Product Features 50-860 M H z Bandwidth ® -61 dBc C TB, 110 Channels * -63 dBc CSO , 110 Channels » 3 . 0 dB N oise Figure * 16 dB Gain « 20 dBm P ld B * H igh Reliability

WJ-la17

Contextual Info: uuU LA17/SMLA17 10 to 1000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER » ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN-ORDER SUPPRESSION ♦ MEDIUM OUTPUT LEVEL: +10 dBm TYP. ♦ HIGH THIRD-ORDER INTERCEPT POINT: +28 dBm (TYP.) ♦ FAST PULSE RECOVERY TIME: <50 NSEC

Contextual Info: SR1022 AMPS to PCS UPCONVERTER The SR1022 is a broadband AM Ps to PCS-band upconverter with integral low phase noise synthe­ sizer. Outline Drawing Specifications Characteristics Guaranteed Frequency RF 5 to 15 MHz Bands LO IF 1930-1990 MHz 1061-1096 MHz

WJ-CA19-1

Contextual Info: uuU A19-1 /SMA19-1 W M BM KKm 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER I.P. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 Specifications

Contextual Info: ICA1009 m 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ m I•' j□# h I 1 I IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS

transistor su 312

Contextual Info: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1068 C D M A 1 0 .0 -W a tt 1.93 G H z to 1.99 G H z L in e a r P o w e r A m p lifie r M o d u le • ■ 45 iB Sain PláB:+48 dBm atkins-Johnson’s SA1068 Power W Amplifier provides exceptional

WJ-A88

Contextual Info: u j U A88 / SMA88 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.7 dB TYP. HIGH OUTPUT POWER: +20.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.)