31.823 Search Results

Intel Microprocessor 240440

Abstract: 82360SL intel 82360SL
Contextual Info: in te i November 1992 Intel486 SL Microprocessor SuperSet Data Book Order Number: 241325-001 2-1 Intel486™ SL Microprocessor SuperSet CONTENTS CONTENTS page page 1.0 INTRODUCTION . 2-6 3.0 82360SL I/O SPECIFICATIONS . . . . 2-79

7922 diode

Abstract: AN609
Contextual Info: Si4648DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

RA-89-1

Abstract: 31.823
Contextual Info: uuU RA89-1 / SMRA89-1 10 to 500 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES: 30.0 dB TYP. HIGH OUTPUT POWER: +21.5 dBm (TYP.) HIGH THIRD ORDER I.P: +36 dBm (TYP.) LOW VSWR: <1.5:1 (TYP.) Outline Drawings

PCF 7953

Abstract: J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code
Contextual Info: UM0877 User manual 1.4 kW digital power factor corrector based on the STM32F103ZE Introduction This system has been designed to evaluate the capabilities of the high-density STM32F103ZE microcontroller to perform a digital power factor corrector. An application

M 57741

Abstract: AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129
Contextual Info: THN6501 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA

ice 38156

Abstract: 52169 TARF1504E 6012 transistor 20449 163462 76129 62639 160505 67551
Contextual Info: TARF1504E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1504E is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package

9694E

Abstract: 81800E 226e DIODE SPX29152 09 18 510 6823 649 592E DIODE 40c 0644 SPX29150T-1-8 SPX29150 SPX29151
Contextual Info: Product Characterization Report for the SPX29151 Family of Products SPX29150, SPX29151, SPX29152, SPX29153, SPX2940, SPX2941, SPX3940, SPX3942 Products Prepared By: Velvet Doung, Salvador Wu & Greg West Date: October 13, 2006 SPX29151 Product Family Characterization Report

AN609

Abstract: Si4900DY
Contextual Info: Si4900DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: intei A D W M C B O M IF Û fô G M T tM M82370 INTEGRATED SYSTEM PERIPHERAL Programmable Walt State Generator — 0 to 15 Wait States Pipelined — 1 to 16 Wait States Non-Pipelined High Performance 32-Blt DMA Controller for 16-Bit Bus — 16 MBytes/Sec Maximum Data

INTEL 82360

Abstract: intel 82380 82380 lm 3361 82380 dma 82380-16 intel 80386 bus architecture pipeline architecture for 80386 82384 82380-20
Contextual Info: INTEL CORP -CUP/PRPHLS} h?£ 1 • 482^175 0151355=) in te l 82380 HIGH PERFORMANCE 32-BIT DMA CONTROLLER WITH INTEGRATED SYSTEM SUPPORT PERIPHERALS ■ High Performance 32-Bit DMA Controller — SO MBytes/sec Maximum Data Transfer Rate at 25 MHz — 8 Independently Programmable

M 57741

Abstract: marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080
Contextual Info: THN6501 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA

672047

Abstract: 74303 47464 342637-3 8748 AN609 Si4559ADY 179502
Contextual Info: Si4559ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

intel 82370

Abstract: M82370 60386 27116 M8237 148237
Contextual Info: P B ilL B B S ID liO Ä IS V in te l MILITARY 82370 INTEGRATED SYSTEM PERIPHERAL High P e rfo rm a n c e 3 2 -B it D M A C o n tro lle r fo r 16-B it Bus — 16 M b y te s /S e c M axim um Data T ra n s fe r R a te a t 16 M H z — 8 In d e p e n d e n tly P ro g ram m a b le

527-01

Contextual Info: + – Revised Thermocouple Reference Tables J TYPE Reference Tables N.I.S.T. Monograph 175 Revised to ITS-90 °C -10 -9 -8 -7 -6 -5 -4 Thermocouple Grade Iron vs. Copper-Nickel + – Extension Grade MAXIMUM TEMPERATURE RANGE Thermocouple Grade 32 to 1382°F