J12 IR Search Results

J12TE2-66D-R01M

Abstract: J12TE3-66D-R250U INSB PHOTODIODE jones chopper J12-18C-R250U RBBG J12-18C thermistor inas detector inas hsa2
Contextual Info: Judson Technologies J12 SERIES INAS DETECTORS PB 220 October 2000 Operating Instructions Typical J12 Series Operating Circuit RF > 10x RD IS - Vo = IS • RF + Detector Ios Preamp Selection vs Shunt Selection Impedance Recommended Detector Shunt Op Amp Impedance ohms

HgCdTe

Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
Contextual Info: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon­ generated current source I h w ith parallel

so805

Abstract: HEADER16 MDIO MDC SD17 HEADER7 SD10 SD12 C35-C37 SD14 SD15
Contextual Info: 5 4 DVDD_33V 3 C1 220uF C2 0.1uF C4 0.1uF C5 0.1uF C6 0.1uF C7 0.1uF C8 0.1uF C9 0.1uF C10 0.1uF AVDD_33V C11 220uF C12 0.1uF DVDD_33V AVDD_18V TXD2_3 GP6 GP5 DVDD_33V C13 0.1uF R3 C14 0.1uF EECK 4.7k J13 3 2 1 EEDO D 2 DVDD_33V DVDD_18V J12 C19 0.1uF C20

R536

Abstract: PG1102W RIRQ15 J507 J1213 RDDS12 SD411 SOT-23A
Contextual Info: 1 2 3 4 5 6 7 8 PRIMARY IDE & GLIDE PAD CONNECTOR PDD[0.15] 12 PDD[0.15] PDD3 PDD11 PDD4 PDD1 PDD13 PDD2 PDD15 PDD0 PDD12 PDD8 PDD7 PDD9 PDD6 PDD14 PDD10 PDD5 A J12 RDDP3 RDDP11 RDDP4 RDDP1 RDDP13 RDDP2 RDDP15 RDDP0 RDDP12 RDDP8 RDDP7 RDDP9 RDDP6 RDDP14

POL 4558

Abstract: GW 5820 m5635 pol 4558 ic 32M736 45M4 MN62 M4C5 MO-45 l05 74254
Contextual Info: TC9325F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC9325F ! Single-Chip DTS Microcontroller DTS-20 ! ! ! "#$!"%&'()*!+,!-!,+./0$12#+3!4+/+5-0!56.+./!,7,5$8!9:";<! ! !

SAMTECTSW10608GS3PIN

Abstract: PJ-102A PJ102A cy7c68013a-56pvxc SAMTECTSW-106-08-G-S PC74 TSW-102-08-G-S LX1206 C129 10UF
Contextual Info: 8 6 7 2 3 4 5 1 REVISIONS REV DESCRIPTION DATE APPROVED D D J12 1 IRQ C40 2 3 4 5 AVDD_3.3V M3 M2 M1 M0 DVDD_3.3V M7 M6 M5 M4 DVDD_1.8V DNI R19 24.9 .1UF J11 DNI R18 24.9 1 2 3 4 5 C39 .1UF 3PF .1UF XFMRP 12NH L4 22NH 2 3 4 5 1 J13 DNI R20 24.9 DNI R21 24.9

Contextual Info: All MikroElektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to

B43875

Abstract: B43875A5228 semikron SKHI 123D SKS 25F semikron SKm 50 GB 123D semikron SKS B6CI 16 V12 IGBT J19 Connector SKHI B4387
Contextual Info: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITRANS Stack Three-phase inverter SKS 25F B6U+B6CI 09 V12 SKM 50 GB 123D SKKD 46/12 P3/410F SKHI 23/12-S 1 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w Cooling

DB9-connector

Abstract: pmc connector J1231 J833 J1230 J1220 FLOPPY pinout 24 Floppy connector 34 pin IDC J839 j824
Contextual Info: VMIACC-0577 CompactPCI Rear Transition Board Installation Guide 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA 256 880-0444 ♦ (800) 322-3616 ♦ Fax:(256)882-0859 522-800577-000 Rev. C 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA

SDS S4 24V

Abstract: SI03 TC5242
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,144-wordx 4 bit dynamic random access memory RAM port and a 512-word x 4 bit static serial access memory(SAM) port.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,1 4 4 - w o r d x 4 bit dynamic random access memory RAM port and a 5 1 2 - w o r d x 4 bit static serial access memory(SAM) port.

lcd m278

Abstract: 64GS24 M339 m329 lcd marking M117 motorola m120 m131 m233 M317 M346
Contextual Info: MMCPFB1200 Platform Board User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

Contextual Info: 3Z4M 3Z4M Laser Displacement Sensor 3Z4M High Resolution to 10 µ or 50 µ, Gives Precise Linear Output and Displays Distance • Distance is displayed in millimeters on controller ■ Ready-to-use linearized output is both -10 to +10 VDC and 4 to 20 mA ■ Sensing distances of 40 mm and 100 mm

222J400

Abstract: 222J63 102J100 472J100 472J400 102j63 153j63 103j100 101J j12 ir
Contextual Info: PFR RoHS Compliant • Polypropylene film/foil capacitor • According to IEC 60384-13 typical applications Construction High speed applications requiring low losses at high frequencies and high dU/dt. Typical applications electrical ballasts,TV/ video, telecommunications.

3Z4M-S01

Abstract: 3Z4M-S22 LASER DISTANCE METER J10 DIODE analog displacement sensor for 0 to 50 mm 3z4m OMRON variable resistor distance sensor with measuring range 30 m 3Z4M-S01-7 linear displacement sensor
Contextual Info: 3Z4M 3Z4M Laser Displacement Sensor 3Z4M High Resolution to 10 µ or 50 µ, Gives Precise Linear Output and Displays Distance • Distance is displayed in millimeters on controller ■ Ready-to-use linearized output is both -10 to +10 VDC and 4 to 20 mA ■ Sensing distances of 40 mm and 100 mm

TC55B8128

Abstract: TC55B8128P DIP32-P-400 TC55B8128J
Contextual Info: TOSHIBA TC55B8128P/J-12/15/20 SILICON GATE BiCMOS 131,072 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B8128P/J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

222J63

Abstract: tolerance j12 102J100 103j100 223J63 EVOX pfr5 472J63 222J630J12L4 682J100 222J100
Contextual Info: PFR • Polypropylene film/foil capacitor • According to IEC 60384-13 TYPICAL APPLICATIONS CONSTRUCTION High speed applications requiring low losses at high frequencies and high dU/dt. Typical applications electrical ballasts,TV/ video, telecommunications.

223j63

Abstract: tolerance j12 102J630J11L4
Contextual Info: PFR RoHS Compliant • Polypropylene film/foil capacitor • According to IEC 60384-13 typical applications Construction High speed applications requiring low losses at high frequencies and high dU/dt. Typical applications electrical ballasts,TV/ video, telecommunications.

rifa capacitor fmd

Contextual Info: PFR RoHS Compliant • Polypropylene film/foil capacitor • According to IEC 60384-13 typical applications Construction High speed applications requiring low losses at high frequencies and high dU/dt. Typical applications electrical ballasts,TV/ video, telecommunications.

Contextual Info: ^ V ^ l- b A O P R E L IM IN A R Y 65,536 W O R D x 4 BIT Bi C M O S STA TIC RA M D ESCRIPTIO N The TC55B464P/J is a 262,144 bits high speed static random access memory organized as 65,536 words by 4 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba’s BiCMOS

7614-6002 3m

Abstract: CPU CP30 A21E
Contextual Info: REJ10J1262-0101 SH7211 CPU Board M3A-HS11 32 User's Manual Renesas 32-Bit RISC Microcomputers SuperH RISCengine Family / SH7211 Group TM Rev. 1.01 Issued : Jan 31, 2008 Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate

Contextual Info: 3 2 ,768 W O R D X 8 BIT BiCMOS STATIC R A M PRELIM INARY DESCRIPTION The TC55B328P/J is a 262,144 bits high speed static random access memory organized as 32,768 words by 8 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS

XH414HG-II06E

Abstract: 47k thermistor ntc
Contextual Info: TWL6032 Evaluation Module EVM User’s Guide User's Guide Literature Number: SWCU105 October 2012 WARNING: EXPORT NOTICE Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data (as defined by the U.S., EU, and

si4432

Abstract: SI1000 ezradiopro Si4030 Si100x silabs GFSK 10S AN415 Si4430-B SI1010
Contextual Info: Si1000/10 QSG Si1000/Si1010 W IRELESS MCU Q UICK - S TAR T G UIDE 1. Introduction This application note will help you get a quick start on demonstration, evaluation, or code development with the Si10xx products. 1.1. Choose between Evaluation, Demonstration, or Code Development