J10R Search Results
J10R Price and Stock
TE Connectivity RP73PF1J10RBTDFRES SMD 10 OHM 0.1% 1/6W 0603 |
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RP73PF1J10RBTDF | Digi-Reel | 1,358 | 1 |
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RP73PF1J10RBTDF | 16 Weeks | 1,000 |
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RP73PF1J10RBTDF | 1,358 | 1 |
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CIT Relay & Switch KJ10RTRSWITCH SLIDE DIP SPST 0.025A 24V |
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KJ10RTR | Cut Tape | 740 | 1 |
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Ohmite Mfg Co 20J10RRES 10 OHM 5% 10W AXIAL |
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20J10R | Bulk | 239 | 1 |
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20J10R | 290 |
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Ohmite Mfg Co 90J10RERES 10 OHM 5% 11W AXIAL |
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90J10RE | Bulk | 215 | 1 |
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90J10RE | 5 | 1 |
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90J10RE | Bulk | 600 | 5 |
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90J10RE | 100 |
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TE Connectivity HCF80J10RJHCF80 75W 10R 5% LEAD |
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HCF80J10RJ | Box | 43 | 1 |
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HCF80J10RJ | Bulk | 1 |
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HCF80J10RJ |
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HCF80J10RJ | 43 | 1 |
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J10R Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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6726BContextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 8 Bit Fast Static Random Access Memory The M C M 6726B is a 1,048,576 bit static random access m em ory organized as 131,072 w ords of 8 bits. T h is device is fabricated >ising high perform ance s ili con—gate BiCM O S technology. S atic design e lim inates the need fo r external |
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6726B 6726B 6726BW CM6726BW 26BWJ10 MCM6726B | |
m6926Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6926 Product Preview 128K x 8 Bit Fast Static Random Access Memory The MCM6926 is a 1.048,576 bit static random i>c access memory organized as 131,072 words of 8 bits. This device is fabricated r high performance silicongate BiCMOS technology. Static design eliminates•the need for external clocks |
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MCM6926 MCM6926 MCM6926W m6926 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729 Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729 is a 1,048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. T h is device is fabricated using high p erform ance siiicon-gate |
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MCM6729 MCM6729 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67Q804 Product Preview 256K x 4 Bit Synchronous Fast Static RAM WJ PACKAGE 400 MIL SOJ CASE 893 The M otorola M C M 67Q 804 is a 1.048,576 bit static random a ccess memory, o rganized as 262,144 x 4 bits. This device is fabricated using M otorola’s highperform ance silicon-gate B iC M O S technology. It features separate TTL input and |
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MCM67Q804 CM67Q804 67Q0Q4 70804W MCM67Q804 | |
54260
Abstract: 5L426 4260B/BSL-70
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MCM54260B 54260BJ70 54260BJ80 54260BJ10 54260BT70 54260BT80 54260BT10 54260BJ70R 54260BJ80R 54260 5L426 4260B/BSL-70 | |
LCD 2x16, 16 pin up, 16 pin down Module Date Code
Abstract: push button using psoc to activate a counter project report of simple PWM circuit 9v ac power supply using bread board MINIPROG3 verilog code to generate sine wave led display board using psoc mini projects topics Uart project mini hardware projects
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CY8CKIT-001 CY8CKIT-001 LCD 2x16, 16 pin up, 16 pin down Module Date Code push button using psoc to activate a counter project report of simple PWM circuit 9v ac power supply using bread board MINIPROG3 verilog code to generate sine wave led display board using psoc mini projects topics Uart project mini hardware projects | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 Product Preview 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048.576 bit static random access memory organized as 131,072 x 8 bits. This device is fabricated using high performance silicon-gate |
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MCM6726 MCM6726 | |
6726AWContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726A Product Preview 128K x 8 Bit Fast Static Random Access Memory The M C M 6726A is a 1,048,576 b it static random a ccess m em ory organized as 131,072 x 8 bits. This device is fab rica ted using high perfo rm a n ce silicon-gate |
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MCM6726A MCM6726AW 6726AW J15R2 J10R2 | |
26DQ3Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs The M otorola M C M 67P 804 is a 1.048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fabricated using M otorola's highperform ance sllicon-gate B iC M O S technology. It fea tu re s separate TT L input and |
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MCM67P804 DQ255i MCM67P804 67P804 67P804W J10R2 MCM67P804W J12R2 26DQ3 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The MCM67Q804 is a 1,048,576 bit static random access nemory, organized as 262,144 x 4 bits. This device is fabricated using Motorola’s high-performance silicon-gate BiCMOS technology. It features separate TTL input and output buff |
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MCM67Q804 MCM67 67Q804 J10R2 J12R2 MCM67Q804 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicongate BiCMOS technology. Static design eliminates the need for external clocks |
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MCM6726 MCM67; J10R2 J12R2 | |
Contextual Info: MOTOROLA O rder this docum ent by M CM 6926A/D SEMICONDUCTOR TECHNICAL DATA MCM6926A Advance Information 128K x 8 Bit Fast Static Random Access Memory W J PACKAGE 400 MIL SOJ CASE 8 5 7 A -0 2 The MCM6926A is a 1,048,576 bit static random access memory organized |
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926A/D MCM6926A MCM6926A MCM6926A/D | |
OHMITE 4854
Abstract: ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803
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0200B 0200C 0200D 0200E 0200F 0200G 0200H 0200J 0200K 0200L OHMITE 4854 ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803 | |
smd diode code pj 3139
Abstract: pj 3316 diode 0/smd diode code pj 3139
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CY8CKIT-001 CY8CKIT-001 smd diode code pj 3139 pj 3316 diode 0/smd diode code pj 3139 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing |
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MCM6728 J10R2 J12R2 J15R2 | |
MCM6706A-12Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6706A 32K x 8 Bit Static Random Access Memory The MCM6706A is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. |
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MCM6706A 28-lead MCM6706A-8 CM6706A-10= 67Q6A 6706AJ8 6706AJ10 6706AJ12 MCM6706A-12 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,0-18,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon— gate BiCMOS technology. Static design eliminates the need for external clocks |
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MCM6728 MCM6728 J10R2 J12R2 | |
J10R2Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729A Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729A is a 1,048,576 bit static random a ccess m em ory orga n ized as 262,144 x 4 bits. This device is fabricated using high perform ance silicon-gate |
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MCM6729A 6729AW J10R2 729AW J12R2 MCM6729AW J15R2 J10R2 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM101510 1M x 1 Bit Fast Static Random Access Memory with ECL I/O ECL 101K Levels ECL 100K @ - 5.2 V Are Required W J PACKAGE 4 0 0 M IL S O J C A S E 810 The M C M 101510 is a 1,048,576 bit static random a ccess m em ory organized as |
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MCM101510 01510W CM101510 | |
display lcd 16x2 232
Abstract: CY8C3866 J6 SMD Philips ECG catalog CY8C3866AXI-040 push button using psoc to activate a counter CY8C5588AXI-060 3m 3335 10 pin ribbon cable philips ecg component guide doc lcd 16x2 14 pin
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CY8CKIT-001 727-CY8CKIT-009A CY8CKIT-009A display lcd 16x2 232 CY8C3866 J6 SMD Philips ECG catalog CY8C3866AXI-040 push button using psoc to activate a counter CY8C5588AXI-060 3m 3335 10 pin ribbon cable philips ecg component guide doc lcd 16x2 14 pin | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs T h e M o torola M C M 6 7 P 8 0 4 is a 1,048,576 bit static random a c c e s s m em ory o rg a n ize d a s 2 62 ,14 4 x 4 bits. T h is d e v ice is fabricated using M o torola’s highperform ance s ilicon-gate B iC M O S technology. It featu res sep arate T T L input and |
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MCM67P804 MCM67P804 67P804 MCM67P804WJ10 MCM67P804W J10R2 MCM67P804WJ12 MCM67P804WJ12R2 | |
JXXX
Abstract: AO16A
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MCM54190B 54190BJ80 54190BJ10 54190B JXXX AO16A | |
Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM6290C 16K x 4 Bit Static RAM With Output Enable The MCM6290C with OE is a 65,536 bit static random access memory organized as 16,384 words of 4 bits, fabricated using Motorola's high-performance silicon-gate CMOS |
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MCM6290C MCM6290C 629QC 6290CP12 6290C 6290CP20 | |
AST500Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6729A 256K x 4 Bit Fast Static Random Access Memory The MCM6729A is a 1.048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance sili con—gate BiCMOS technology. Static design eliminates the need for external |
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MCM6729A MCM6729AW CM6729AW 6729AW J10R2 J12R2 AST500 |