J10R2 Search Results
J10R2 Price and Stock
TE Connectivity RN73C1J10R2BTGRes Thin Film 0603 10.2 Ohm 0.1% 0.063W(1/16W) ±10ppm/°C Pad SMD T/R |
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RN73C1J10R2BTG | Bag | 14 Weeks, 3 Days | 250 |
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RN73C1J10R2BTG | Tape & Reel | 250 |
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RN73C1J10R2BTG | 19 Weeks | 250 |
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Samtec Inc FJ-10-R-24.04-4 |
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TE Connectivity RP73D1J10R2BTGRP 1J 10R2 0.1% 15PPM 250 RL<br/>Thin Film Precision SMD Higher Power<br/>Fixed Resistor |
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RP73D1J10R2BTG |
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RP73D1J10R2BTG | Bag | 14 Weeks, 3 Days | 250 |
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RP73D1J10R2BTG | Tape & Reel | 100 |
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| RP73D1J10R2BTG | Cut Tape | 1 |
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RP73D1J10R2BTG | 19 Weeks | 250 |
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Samtec Inc FJ-10-R-24.74-4 |
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Samtec Inc FJ-10-R-24.13-4 |
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J10R2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
6726AWContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726A Product Preview 128K x 8 Bit Fast Static Random Access Memory The M C M 6726A is a 1,048,576 b it static random a ccess m em ory organized as 131,072 x 8 bits. This device is fab rica ted using high perfo rm a n ce silicon-gate |
OCR Scan |
mcm6726amcm6726aw6726awj15r2+1 | |
26DQ3Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs The M otorola M C M 67P 804 is a 1.048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fabricated using M otorola's highperform ance sllicon-gate B iC M O S technology. It fea tu re s separate TT L input and |
OCR Scan |
mcm67p804dq255i67p80467p804w+4 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The MCM67Q804 is a 1,048,576 bit static random access nemory, organized as 262,144 x 4 bits. This device is fabricated using Motorola’s high-performance silicon-gate BiCMOS technology. It features separate TTL input and output buff |
OCR Scan |
mcm67q804mcm6767q804j10r2+1 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicongate BiCMOS technology. Static design eliminates the need for external clocks |
OCR Scan |
mcm6726mcm67j10r2j12r2 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing |
OCR Scan |
mcm6728j10r2j12r2j15r2 | |
MCM6706A-12Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6706A 32K x 8 Bit Static Random Access Memory The MCM6706A is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. |
OCR Scan |
mcm6706a28-leadmcm6706a-8cm6706a-10+5 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,0-18,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon— gate BiCMOS technology. Static design eliminates the need for external clocks |
OCR Scan |
mcm6728j10r2j12r2 | |
J10R2Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729A Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729A is a 1,048,576 bit static random a ccess m em ory orga n ized as 262,144 x 4 bits. This device is fabricated using high perform ance silicon-gate |
OCR Scan |
mcm6729a6729awj10r2729aw+3 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs T h e M o torola M C M 6 7 P 8 0 4 is a 1,048,576 bit static random a c c e s s m em ory o rg a n ize d a s 2 62 ,14 4 x 4 bits. T h is d e v ice is fabricated using M o torola’s highperform ance s ilicon-gate B iC M O S technology. It featu res sep arate T T L input and |
OCR Scan |
mcm67p80467p804mcm67p804wj10mcm67p804w+3 | |
AST500Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6729A 256K x 4 Bit Fast Static Random Access Memory The MCM6729A is a 1.048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance sili con—gate BiCMOS technology. Static design eliminates the need for external |
OCR Scan |
mcm6729amcm6729awcm6729aw6729aw+3 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The M C M 67 Q 8 0 4 is a 1,048,576 bit static random a ccess memory, organized as 2 6 2 ,14 4 x 4 bits. T h is device is fab rica ted using M otorola’s h ig h -p erform a n ce |
OCR Scan |
daq804mom67q804mcm67qj10r2+2 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6727A Product Preview 1M x 1 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 810 The M C M 6727A is a 1,048,576 bit static random a ccess m em ory organized as 1,048,576 x 1 bits. This device is fabricated using high perform ance silicon-gate |
OCR Scan |
mcm6727a6727awj10r2j12r2+1 | |
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Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6726B Product Preview 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 857A-02 T h e M C M 6 7 2 6 B is a 1 ,0 4 8 ,5 7 6 bit s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d |
OCR Scan |
mcm6726b6726b6726bwj10r2+1 |