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    Vishay Dale RNC55J10R2BRRSL

    RES 10.2 OHM 1/8W .1% AXIAL
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    Samtec Inc FJ-10-R-24.00-4

    CABLE FFC/FPC 10POS 1MM 24"
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    Vishay Dale RNC55J10R2FSRE7

    RES 10.2 OHM 1% 1/8W AXIAL
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    Vishay Dale RNC55J10R2FSBSL

    RES 10.2 OHM 1/8W 1% AXIAL
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    Vishay Dale RNC65J10R2FRB14

    RES 10.2 OHM 1% 1/2W AXIAL
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    J10R2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6726AW

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726A Product Preview 128K x 8 Bit Fast Static Random Access Memory The M C M 6726A is a 1,048,576 b it static random a ccess m em ory organized as 131,072 x 8 bits. This device is fab rica ted using high perfo rm a n ce silicon-gate


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    MCM6726A MCM6726AW 6726AW J15R2 J10R2 PDF

    26DQ3

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs The M otorola M C M 67P 804 is a 1.048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fabricated using M otorola's highperform ance sllicon-gate B iC M O S technology. It fea tu re s separate TT L input and


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    MCM67P804 DQ255i MCM67P804 67P804 67P804W J10R2 MCM67P804W J12R2 26DQ3 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The MCM67Q804 is a 1,048,576 bit static random access nemory, organized as 262,144 x 4 bits. This device is fabricated using Motorola’s high-performance silicon-gate BiCMOS technology. It features separate TTL input and output buff­


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    MCM67Q804 MCM67 67Q804 J10R2 J12R2 MCM67Q804 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicongate BiCMOS technology. Static design eliminates the need for external clocks


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    MCM6726 MCM67; J10R2 J12R2 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing


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    MCM6728 J10R2 J12R2 J15R2 PDF

    MCM6706A-12

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6706A 32K x 8 Bit Static Random Access Memory The MCM6706A is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes.


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    MCM6706A 28-lead MCM6706A-8 CM6706A-10= 67Q6A 6706AJ8 6706AJ10 6706AJ12 MCM6706A-12 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,0-18,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon— gate BiCMOS technology. Static design eliminates the need for external clocks


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    MCM6728 MCM6728 J10R2 J12R2 PDF

    J10R2

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729A Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729A is a 1,048,576 bit static random a ccess m em ory orga n ized as 262,144 x 4 bits. This device is fabricated using high perform ance silicon-gate


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    MCM6729A 6729AW J10R2 729AW J12R2 MCM6729AW J15R2 J10R2 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs T h e M o torola M C M 6 7 P 8 0 4 is a 1,048,576 bit static random a c c e s s m em ory o rg a n ize d a s 2 62 ,14 4 x 4 bits. T h is d e v ice is fabricated using M o torola’s highperform ance s ilicon-gate B iC M O S technology. It featu res sep arate T T L input and


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    MCM67P804 MCM67P804 67P804 MCM67P804WJ10 MCM67P804W J10R2 MCM67P804WJ12 MCM67P804WJ12R2 PDF

    AST500

    Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6729A 256K x 4 Bit Fast Static Random Access Memory The MCM6729A is a 1.048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance sili­ con—gate BiCMOS technology. Static design eliminates the need for external


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    MCM6729A MCM6729AW CM6729AW 6729AW J10R2 J12R2 AST500 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The M C M 67 Q 8 0 4 is a 1,048,576 bit static random a ccess memory, organized as 2 6 2 ,14 4 x 4 bits. T h is device is fab rica ted using M otorola’s h ig h -p erform a n ce


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    DaQ804 MOM67Q804 MCM67Q J10R2 J12R2 MCM67Q804 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6727A Product Preview 1M x 1 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 810 The M C M 6727A is a 1,048,576 bit static random a ccess m em ory organized as 1,048,576 x 1 bits. This device is fabricated using high perform ance silicon-gate


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    MCM6727A 6727AW J10R2 J12R2 CM6727AW PDF

    Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6726B Product Preview 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 857A-02 T h e M C M 6 7 2 6 B is a 1 ,0 4 8 ,5 7 6 bit s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d


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    MCM6726B 6726B 6726BW J10R2 J12R2 PDF