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    TE Connectivity RN73C1J10R2BTG

    Res Thin Film 0603 10.2 Ohm 0.1% 0.063W(1/16W) ±10ppm/°C Pad SMD T/R
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    Mouser Electronics RN73C1J10R2BTG
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    Newark RN73C1J10R2BTG Tape & Reel 250
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    Samtec Inc FJ-10-R-24.04-4

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    Master Electronics FJ-10-R-24.04-4
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    TE Connectivity RP73D1J10R2BTG

    RP 1J 10R2 0.1% 15PPM 250 RL<br/>Thin Film Precision SMD Higher Power<br/>Fixed Resistor
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    Samtec Inc FJ-10-R-24.74-4

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    Samtec Inc FJ-10-R-24.13-4

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    Master Electronics FJ-10-R-24.13-4
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    J10R2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6726AW

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726A Product Preview 128K x 8 Bit Fast Static Random Access Memory The M C M 6726A is a 1,048,576 b it static random a ccess m em ory organized as 131,072 x 8 bits. This device is fab rica ted using high perfo rm a n ce silicon-gate


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    mcm6726amcm6726aw6726awj15r2+1j10r2 PDF

    26DQ3

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs The M otorola M C M 67P 804 is a 1.048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fabricated using M otorola's highperform ance sllicon-gate B iC M O S technology. It fea tu re s separate TT L input and


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    mcm67p804dq255i67p80467p804w+4j10r2mcm67p804wj12r226dq3 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The MCM67Q804 is a 1,048,576 bit static random access nemory, organized as 262,144 x 4 bits. This device is fabricated using Motorola’s high-performance silicon-gate BiCMOS technology. It features separate TTL input and output buff­


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    mcm67q804mcm6767q804j10r2+1j12r2 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicongate BiCMOS technology. Static design eliminates the need for external clocks


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    mcm6726mcm67j10r2j12r2 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing


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    mcm6728j10r2j12r2j15r2 PDF

    MCM6706A-12

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6706A 32K x 8 Bit Static Random Access Memory The MCM6706A is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes.


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    mcm6706a28-leadmcm6706a-8cm6706a-10+567q6a6706aj86706aj106706aj12mcm6706a-12 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,0-18,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon— gate BiCMOS technology. Static design eliminates the need for external clocks


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    mcm6728j10r2j12r2 PDF

    J10R2

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729A Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729A is a 1,048,576 bit static random a ccess m em ory orga n ized as 262,144 x 4 bits. This device is fabricated using high perform ance silicon-gate


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    mcm6729a6729awj10r2729aw+3j12r2mcm6729awj15r2 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs T h e M o torola M C M 6 7 P 8 0 4 is a 1,048,576 bit static random a c c e s s m em ory o rg a n ize d a s 2 62 ,14 4 x 4 bits. T h is d e v ice is fabricated using M o torola’s highperform ance s ilicon-gate B iC M O S technology. It featu res sep arate T T L input and


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    mcm67p80467p804mcm67p804wj10mcm67p804w+3j10r2mcm67p804wj12mcm67p804wj12r2 PDF

    AST500

    Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6729A 256K x 4 Bit Fast Static Random Access Memory The MCM6729A is a 1.048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance sili­ con—gate BiCMOS technology. Static design eliminates the need for external


    OCR Scan
    mcm6729amcm6729awcm6729aw6729aw+3j10r2j12r2ast500 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The M C M 67 Q 8 0 4 is a 1,048,576 bit static random a ccess memory, organized as 2 6 2 ,14 4 x 4 bits. T h is device is fab rica ted using M otorola’s h ig h -p erform a n ce


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    daq804mom67q804mcm67qj10r2+2j12r2mcm67q804 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6727A Product Preview 1M x 1 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 810 The M C M 6727A is a 1,048,576 bit static random a ccess m em ory organized as 1,048,576 x 1 bits. This device is fabricated using high perform ance silicon-gate


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    mcm6727a6727awj10r2j12r2+1cm6727aw PDF

    Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6726B Product Preview 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 857A-02 T h e M C M 6 7 2 6 B is a 1 ,0 4 8 ,5 7 6 bit s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d


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    mcm6726b6726b6726bwj10r2+1j12r2 PDF