J06A Search Results

Contextual Info: HY514800B Series HYUNDAI 512Kx8-bit CMOS DRAM PREUMINARY DESCRIPTION The HY514800B is the new generation and fast dynamic RAM organized 524,268 x 8-bits. The HY514800B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: D A TA SHEET NECE MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs w ith optional fast page mode and byte read/write mode.

HY5118160

Abstract: IPR12 hy5118160jc AAU27
Contextual Info: HY5118160 Series •HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

evic vt 60w

Abstract: LM1040 Transistor Shortform Datasheet & Cross References TRANSISTOR C 6090 EQUIVALENT 6 pin TRANSISTOR SMD CODE CAA Fairchild Databook LMF120 lm331 equivalent LM1819 Harris Semiconductor LF124
Contextual Info: A Corporate Dedication to Quality and Reliability National Sem iconductor is an industry leader in the manufacture of high quality, high reliability integrated circuits. We have been the leading proponent of driv­ ing down 1C defects and extending product lifetim es.