J021 Search Results

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

A32F3

Abstract: TM 1628 driver display TM 1628 display driver A32-F3 toshiba R56 I002 JTMP04CH01XXXS TMP04CH01FXXX ZH19 F-1001
Contextual Info: TOSHIBA TM P04C H01 FXXX JTM P04C H01XXXS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T M P04C H01 FXXX( JT M P04C H01 XXXS) CMOS 4BIT LL MICROCONTROLLER (LL : LOW POWER CONSUMPTION & VOLTAGE OPERATION MICROCONTROLLER) ♦ o u t l in e The TMP04CH01FXXX is a high-performance

Contextual Info: Analog Power AMJ506C N & P-Channel 60-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC

Contextual Info: Analog Power AMJ460N N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power

Contextual Info: Analog Power AMJ461P P-Channel 60-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC

Contextual Info: Analog Power AMJ432N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power

Contextual Info: M0&ED@ED07&"09>4931D?B0 >4ECDBI0?>DB?<0 ICD5= M0*B9@<50&ED@ED M0$55D0%FFACC0<1CC00)5=93?>4E3D?B0AE9@=5>D M0 >D5B>1<09>@ED06EC50@B?D53D9?> M0 >D5B>1<09>@ED0B5F5BC50@?<1B9DI0@B?D53D9?> M0 >D5B>1<09>@ED09>7BEC803EBB5>D0<9=9D039B3E9D M0&F5B<?1401>40C8?BD039B3E9D0@B?D53D9?>

75322

Abstract: lc 5013 NC-512-BIT
Contextual Info: TM S 3401 LC. NC -512-BIT DYNAMIC SHIFT REGISTER TMS 3402 LC. NC - 500-B IT DYNAMIC SHIFT REGISTER MOS LSI featu es Tw o -ph a se d y n a m ic lo g ic 5 -M H z o p e ra tio n D ire c tly T T L c o m p a tib le a t in p u t a nd o u tp u t N o e x te rn a l resistors re q u ire d

CXD3400N

Abstract: svs 357 Sony ICX414AL ICX414AL 27MHZ Sony ICX414
Contextual Info: ICX414AL 対角8mm（1／2型）EIA準拠正方画素型白黒用全画素読み出し方式固体撮像素子 概 要 ICX414ALは，対角8mm（1／2型）EIA方式準拠の 白黒カメラに適した正方画素配列インタライン型 CCD固体撮像素子です。全画素独立読み出し方式に

ICX415AL

Abstract: CXD3400N 29.5MHZ icx415 75MHZ CM500S DIODE v2 248
Contextual Info: ICX415AL 対角8mm（1／2型）CCIR準拠正方画素型白黒用全画素読み出し方式固体撮像素子 概 要 ICX415ALは，対角8mm（1／2型）CCIR方式準拠の 白黒カメラに適したインタライン型CCD固体撮像素 子です。全画素独立読み出し方式により，約1／50秒

Contextual Info: 4 3 1 2 01 in r- • 0 .5 d B f c iyy "S Y ~7 & -?*} M A X 0 . 5 CCUT O FF TAB h— !- !— J ■- = d ‘ n £=Ji 13.9 O 4 . 1±0. 4 CL H LU i<—B ^ —0 m ~m B-B C ~~C W t Wj SECT.C-C SECT.B-B NOTE ; 1 . APPLICATION SPEC NO. 114-5160 APPLICABLE PRODUCT SPEC N O . 108-5374

Contextual Info: SIDE ENTRY MODULAR PCB JACK 8P PROFILE=12.20MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

power jack pcb

Abstract: PJ-021
Contextual Info: 13 .0 0 ± 0 .2 5 • 1.3- 1. 2 - o o ^ 4 .5 ^ 4 .5 ± 0 .2 Right PCB L ayout Top View PC FILE NAME: p j-Q 2 1 .d w g C O P YR IG H T 2001 BY CUI INC. — 2 .5 ± 0 . 2 4 3 2 1 No. Specifications: 1. Insulation Resistance: lOOMOhms min. (initial) 2. C ontact Resistance (initial):

J-023

Abstract: J02-1 J023 J020 J024
Contextual Info: J-020 J-021 J-022 J-023 J-024

Contextual Info: Analog Power AMJ420N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power

Contextual Info: Analog Power AMJ501C N & P-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and

Contextual Info: Analog Power AMJ500C N & P-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC

CRT - TCL COLOUR TV SCHEMATIC DIAGRAM

Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A
Contextual Info: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BT808

Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
Contextual Info: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•

Contextual Info: S t a n d a r d D IN P lu g s , J a c k s & S o c k e ts 7 - 1.40 CN C. DIN Socket Panel-Metal D. DIN Plug E. DIN Jack Configuration Description 3 Pin /zk\ 4 Pin 6 Pin 5 Pin 7 Pin 8 Pin * 45° 180° 210° 180° 240° 270° 270° D J0203P D J0203P S SD 30S N

Fuseblock - 3839

Abstract: bussmann fuseblock MIC-10 MIC-15 MIN-10 MIN-15 MIN-20 MIN-25 75-1500Vdc
Contextual Info: Bussmann Indicating, Fast-Acting Fuse MIC/MIN For 13/32” x 1-1/2” 10.3mm x 38.1mm Dimensional Data 1.5" (±0.031) (38.1mm) • Use in power electronic circuits in which fuse opening must be quickly apparent. • Opening of fuse results in ejection of end pin.

Contextual Info: F20-!+20%! 0 0!+0.*&2 &'&F7BAA0)5B95C F7BAA-0 B7D0%ED@EDC0G9D801DD5BI081B75B 0003*)0!+,)&/!3)3.% 51DEB5C L00+>9F5BC1<00>@ED L00ED?0)G9D380G85>0&?G5B0%6603+&)0E>3D9?>4 L00E9<D79>0?>CD1>D0EBB5>D0"9=9D9>709B3E9D L00<1B=0)97>1<C06?B0S%!0201DD5BI0"?G

28 pin ic TM 1628 driver display

Abstract: TM 1628 driver display TM 1628 display driver A32F3 A32-F3
Contextual Info: TOSHIBA TMP04CH01 FXXX JTMP04CH01XXXS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T MP04C H01 FXXX( JT MP04C H01XXXS) CMOS 4BIT LL MICROCONTROLLER (LL : LOW POWER CONSUMPTION & VOLTAGE OPERATION MICROCONTROLLER) ♦ o u t l in e The TMP04CH01FXXX is a high-performance

KM616V1002A

Abstract: N-319
Contextual Info: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)