J-FET GAAS Search Results

4410D

Abstract: F4410D
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series j SUPER LOW NOISE InGaAs HEMT 1-

f2445

Abstract: j fet f2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ; MGF244S | I \ | MICROWAVE POWER GaAs FET j DESCRIPTION The M G F2445, power GaAs FET w ith OUTLINE DRAWING an N-channel U n it: m ilhm eters inches schottky gate, is designed fo r use in S to Ku band am pli­

M 1661 S

Contextual Info: FLK102XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 30.0dBm Typ. High Gain: G-j^B = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a power GaAs FET that is designed for

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì MGFX36V0717| i 3 ; \ |_ 1 0 . 7 ~ l l . 7 G H z BAND 4 W INTERNALLY MATCHED GaAs FET j DESCRIPTION The M G F X 3 6 V 0 7 1 7 is an internally impedance matched GaAs power FET especially designed for use in 1 0 .7 — 1 1 .7

FLK202XV

Contextual Info: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed

MICRON POWER RESISTOR MLS

Abstract: chip die hp transistor
Contextual Info: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN

AS15D

Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
Contextual Info: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB

ms 7616

Abstract: 91564
Contextual Info: J R , HEXAWAVS HWL34YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features Low Cost G aA s P ow er F E T

gps l10

Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)

Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)

0117 0317

Abstract: 6537 fet
Contextual Info: J R , HEXAWAV5 HWL26NPA Hexawave, Inc. L-Band Power GaAs FET 6/18/98 Description Rev. A Outline Dimensions The H W L26N PA is a m edium Pow er G aA s FET using surface m ount type plastic package for various L -B and applications. It is suitable for various 900

24PIN

Abstract: CXG1118ER GC118
Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

3618A

Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

24PIN

Abstract: CXG1115ER
Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

FLk052

Contextual Info: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for

FLK102XV

Abstract: FLK102
Contextual Info: FLK102XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G -j^B = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a pow er GaAs FET that is designed for

Contextual Info: Advance Information S O N Y PHS Receiver Mixer_ CXG1034TN J escription The CXG1034TN is a receiver mixer MMIC designed using Sony’s GaAs J-FET process. • • • • Low distortion: Input IP3 = +1.5 dBm Typ. Low LO input power operation: P lo = -1 5 dBm

FLC081XP

Contextual Info: F LC 081 X P fujÎtsu GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r ia(jç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general

FLK012

Abstract: FLK012XP
Contextual Info: FLK012XP c?„. G a A s F E T a n d H E M T Chips r U J IlM J FEATURES • • • • High Output Power: P-|dB = 20.5dBm Typ. High Gain: G-j^B = 8.0dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability DESCRIPTION The FLK012XP chip is a power GaAs FET that is designed for

Contextual Info: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Contextual Info: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic

HFET-1001

Abstract: HFET-5001
Contextual Info: ÍNEW H EW LE T T ^ j j P A CKA RD COMPONENTS MICROWAVE GaAS FET CHIP HFET- 5001 Features HIGH PidB LINEAR POWER 18.5 dBm Typical at 12 GHz 19.5 dBm Typical at 10 GHz 21.0 dBm Typical at 4 GHz with 11.0 dB Associated Gain SUITABLE FOR BROADBAND APPLICATIONS

bc 149 transistor

Abstract: atic 144 WJ-CA45-1
Contextual Info: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11