J JB TRANSISTOR Search Results

Contextual Info: h ’7 > y X ^ / T ransistors 2SD1943 2SD1943 NPN '> • ; = ! > i£ J i> J t ^ ± illiffl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor h FE V 'm i' Vr>4 V 'A ''J| "r • ^JB 'ri'iilS /D im en sio ns Unit: mm 1) 4. 5 ± 0 . 2 : h FE =

Contextual Info: j Jb£.mL-L,onaiLetoi L/^ 10ducts. One 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1062 Silicon PNP Power Transistor a <x DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min)

Contextual Info: D 1 I O 3 O Z - 1 2 O 3 a )V ^<7 — : Outline Drawings P O W ER TRA N SISTO R MODULE : Features • SBfiJGE High Voltage • 7 'J — 'J V • ASO Jb'"J2iL' -f Krt/BE Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lica tio n s

TRANSISTOR D401

Abstract: D401 -y 2SD1963 D4011
Contextual Info: h 7 > S' 7 $ /Transistors O “ C m Q A * • ^ w w 2SD1963 it f ^ ^ '> 7 ^ y u - ^ 0 N P N y ,; n > K 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé S â fc ï^ J iflte ffl/L o w Freq. Power Amp. 7 s h P ? K 7 7 7 V j- f f l/S t r o b o Flash. • 51-JB‘T a i a / Dimensions Unit : mm)

2SB1535F5

Abstract: 2SB1535
Contextual Info: h7 > V £ /Transistors 2SB1535F5 Epitaxial Planar PNP Silicon Transistor féüá£S27*0,fÍ/l-o w Freq. Power Amp. • il-JB ^äiS/D im ensions Unit : mm • &J& 1) V ce (sat) 6. 5 + 0. 2 VcE (sat)S—0.6V 5 l + 3- 1 - 00 .- 21 r , i. (lc /lB = -0 .5 5 A /-0 .0 3 A )

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

2SD1017

Abstract: 2SD101
Contextual Info: 2S D 1017 2SD1017 N P N = m * £ « t ^ '> y □ "s ' h ~7 NPN Silicon Triple Diffused Transistor ss ? — ? n ; w * m « i ih a * Color TV l w Re9"""or 0u,c“, *1- [2I/PACKAGE DIMENSIONS o [Mjütü X" Jb ò o Vceo —250 V Unit : mm o j  & g ^ s t â i i f t ^ e s æ - c s í . , - r -yX > r ^ m .

JB marking transistor

Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value

Contextual Info: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10PLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 20 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS

LMBTH10LT1G

Abstract: marking JB diode transistor marking 3em
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS

JB marking transistor

Abstract: MPS 425 transistor marking jb "UHF Transistors" k mps marking JB diode y-parameter LMBTH10WT1 sc70 marking JB
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25

JB marking transistor

Abstract: marking JB diode transistor marking JB LMBTH10LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

2SC517

Abstract: TRANSISTOR 2SC ti 517 Transistor 50MHZ
Contextual Info: ì s ' j 3 y n p N T £ 5 > * ì ' j > > b 7 i s - t B \ ' :? y y z 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR r 2SC 517 O VHF t t t l l l O VHF Power Amplifier Applications O 25~75MHz AM»FM by yy-'<<D iti S ffl O Tranceiver Power Amplifier for 25to75MHz Band AM»FM

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm FEATURES • NPN Silicon 0.120(3.04) ‡ 0.110(2.80) ‡ +LJK&XUUHQW*DLQ%DQG:LGWK3URGXFW

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

2SD4027

Abstract: 2sc4027-applied 2SC4027A 2262B 2sc4027
Contextual Info: Ordering number :EN 2262B 2SA1552/2SC4027 N 0.2262B i SA \YO PN P/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Applications . Converters, inverters, color TV audio output Features . Adoption of FBET, MBET processes . High voltage and large current capacity

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues LMBTH10WT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping LMBTH10WT1G 3E 3000/Tape&Reel LMBTH10WT3G 3E 10000/Tape&Reel 1 2

LMBTH10WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues LMBTH10WT1G S-LMBTH10WT1G z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage