J 4005 Search Results

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J 6 - J 3 ) = (J2- J1 ) (P 6 - P 4

20P7

Abstract: 40057
Contextual Info: •w r I [ — JVM— j irn \ . "W “ jsnnr^ Ilk,_ I [ — JVM— Ilk,_ ~v^r J irn \ . I [— JVM— Ilk,_ :—jvm—1 Ilk,_ "W “ jsnnr^ ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 -P 2 (P 7 -P 4 ) (P 6 -P 5 ) (P 9 -P 8 ) : : : : (J 2 -J 1 )

Contextual Info: HEWLETT-PACKARDn CMPNTS 2GE D B 4447SÔ4 QDQS?2b BEAM LEAD PIN DIODE fZ Z J l H E W L E T T X '& J P A C K A R D T Q HPND-4005 HPND-4005TXV T " " 0'I'-1s~ Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical

920A4

Abstract: DRT30CI DRT60CD DRT60CI DRT40CI
Contextual Info: rr *-rr j - r r j - r r r r m r r ESäJsäükBssnmün? rr Features ★ Higher dielectric constant ★ Low temperature coefficient High quality factor Applications ★ Mobile phone ★ Cordless phone Specifications Characteristics Material Dielectric Series

EFOJ3385B5

Abstract: EFOJ3385E5 EFOJ4005B5 EFOJ4005E5 EFOL3385B5 EFOL3385E5 EFOL4005B5 EFOL4005E5
Contextual Info: Ceramic Resonators Chip Type Ceramic Resonators, Chip Type Ceramic Resonators, Chip Type J&L Type: L (For General Purpose, 30 to 45 MHz Type: J (Built-In Capacitors Type, 30 to 45 MHz • Features • Encased in ceramic package ■ Recommended Applications

DRT40CI

Abstract: 920A4
Contextual Info: rr * - r r j- r r j- r r r r m r r ESäJsäükBssnmün? rr Features ★ Higher dielectric constant ★ Low temperature coefficient High quality factor Applications ★ Mobile phone ★ Cordless phone Specifications Characteristics Material Dielectric Series

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED

Contextual Info: Foot Pattern Temperature profile of reflow soldering 3.7 1.0 1.0,1.0 4-» JO IIiE 1 . _ i_ _ J U J CM i u u u.| u1 0.3 1.5J 1 0.7 V Em bossed Carrier Tape Dim ensions /• \ USER DIRECTION OF FEED v Package y Temperature profile of reflow soldering Foot Pattern

Contextual Info: REVISIONS REV EO 1 5 0 0 - 0 1 2 4 DESCRIPTION sh DATE. APPROVED dwn MC W A 3265 I T E M 3 WAS 5 4005 w S ! X -1 2 8 W A S J 5 J X - I 2 8 S _ S A G 150 5 - 0 2 8 - 6 W s . <5X£) © © © © © © © © © © © © © © © © © © © © © © ©

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

K389

Abstract: 62901-B K3721 L3360 K382
Contextual Info: Lumineszenzdioden Light Emitting Diodes Maßbilder in mm Figure 1 Outline drawings (in mm) Figure 2 L * T670, L * T672, LH T674, L * T679, LB T670 L * * T670, L * * T672 3.0 2.1 1.7 C-J -j fOirv r-O IX^ T * oTsT 0.6 0.4 0.12 Cathode GPLOÍ724 G ew icht etwa / Approx. w eight 0,03 g

Burr Brown 3500

Abstract: MIL-STD-883A C4AK d0117 CI 4001 Burr Brown part marking ISTD-883 3500 burn brown J500
Contextual Info: BURR-BROWN CORP 77 77C 11699 1731 36 5 B U RR -B RO WN CGRP B U R R -B R O W N « | F = g B = g DE j 17313fcj5 ODllbTT E J 3500/883B SERIES | MODEL NUMBERS: 3500R/MIL 3500R/883B 3500U/883B REVISION B MAY, 1986 General Purpose - Military OPERATIONAL AMPLIFIER

Contextual Info: 900MHz Band Chip Multilayer 907 3dB Splitter - j Model No. SLC-090U Equivalent Circuits Shape & Size 2.0 Max, < > <— — — >

led 5050

Abstract: 5050 led 50X50 5050 WMS120 SUNR
Contextual Info: 2 .Outline Dimensions\9hMR'^* Units:mm I.CharactersVfffê TOP LE D(5.0X 5.0)\TOP LE D ^M R tiö.O X S .O ) Ultra Bright LED: j KJ5LED*J View angle: 120°\ W M Ä 1 2 0 “ 3.Directive Chanacteristios (Ta=25*C) 4.Absolute Maximum R a tin g s \S ^^3 ff® ^fM (Ta=25°C)

T01-0599-B08-C

Abstract: T01-0599-B03-C T01-0599-B03-A T01-0599-B07-B B05B T01-0599-B08-A
Contextual Info: ThomasiBetts TRIAD 01 Subm iniature Circu lar C on n e ctors Cable assem blies w ith overm oulded C onne ctors A rra ng e m e n t of Contacts f v f $•! ■ i \ y # j❖ k / * T '\ & ^ s>\ i -ç - f V <d j <t> I 7 I I ■ 8 3 4 5 Cable length 1 m T01-0599-B03-A

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 3 2 3 3 ,3 *0, 1 5 k 6 Mo ting foce occording to: MIL-C-24308 / DIN 41652 / CECC 75301-802 CO CN J -0,3 Ponel Cutout -a ' C"J i B i= B 33,3*0,13 ini im i 1 i g8 ,2 i 1 i mi irn h u m * E] B B 3 0 , 5 *0,13 1 =i

pj 3059

Abstract: UG-704 UG-709 UG-573 HN-P-8U UG-556 UG-706 PJ-55 PJ59 1E54
Contextual Info: IMilitary Cross Reference M IL IT A R Y J IS N U M B ER N U M B ER CW- i 23/U | 8N C -C for fem ale C W - I2 3 A /U | 8N C -C (for fem ale) L DD K ¡ P a rt no ! j PAG E 2001 CW- 155/U BNC-C(for fem ale) - C W - I5 5 A /U BNC-C(for fem aie) 2565 CW- 1S9/U

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 3 Mating face according to : MIL-C-24308 / DIN A1652 / CECC 75.01 -802 6 1 . 1 * 0.10 — *- “ * u u J TH T T H M - 1 Protection standard IP 67 according to IEC 529 / DIN 40050, 2c 2) cable: AWG 20 max

CSTCC4.00MG

Abstract: CD4069UBE
Contextual Info: Technical Data of Ceramic Resonator Type CSTCC4.00MG_ Applied to M38039MF-001SP TOYAMA MURATA MANUFACTURING CO., LTD. Product Engineering Service Section I Planning Department Piezoelectric Components Group Approved by S.Iwasaki Checked by j r * £

Diode IN 5404

Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Contextual Info: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A

N4003

Abstract: 4005L 4003L 1N4007L 6A07 LT1504 LT1502 4004L 4006L LT2A
Contextual Info: LITEM fll SILICON RECTIFIERS 1.0 AM PERE TO 10 AM PERES 50 VOLTS TO 1000 VOLTS V \ j Y P E NO. 50 100 200 400 600 800 C A SE 1000 Io 1a \ 1 1.5 2 1 N 4001L 1N 4002L 1N 4003L 1N 4004L 1 N 4005L 1N 4006L 1N 4007L A -405 1N4001 1N4002 1 N4003 1N4004 1N4005

M4005

Contextual Info: SM 4001 C j RECTROni SEMICONDUCTOR THRU TECHNICAL SPECIFICATION SM 4007 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-1.0 Ampere FEATURES * Glass passivated device * Ideal for surface m ounted applications * Low leakage current

stk 490 110

Abstract: stk 490 070 stk*470 090 stk 490 310 STK 290 010 sanyo stk 401-120 Sanyo STK 2025 stk 490 -110 stk ic 5.1 channel amplifier stk ic 5.1 circuit diagram
Contextual Info: * ¡Ordering num ber: EN4822A j Thick Film Hybrid 1C _ STK400-290 ISAgiYOl AF Power Amplifier Split Power Supply (50W + 50W + 50W min, THD = 0.08%) Package Dimensions Overview N ow , thick-fllm audio pow er am plifier ICs are available

MT48LC2M32B2

Abstract: C6000 C6201 TMS320C6000 TMS320C6202 EMIF sdram full example code 6202C
Contextual Info: Application Report SPRA063A - January 2002 How to Begin Development Today and Migrate Across the TMS320C6202/02C/03B/03C/04 DSPs Victor J. Gallardo C6000 DSP Software Solutions ABSTRACT Development is available for systems using the Texas Instruments TMS320C6202, C6203B,