J 13009 - 2 Search Results

J 13009 - 2 Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
67013-009LF		Amphenol Communications Solutions	Berg Duflex Housing, single row, 9 Position.	PDF
92813-009TLF		Amphenol Communications Solutions	Minitek® 2.00mm, Board to Board, Unshrouded Vertical Stacking Header, Surface Mount, Double Row, 16 Positions, 2.00mm (0.079in) Pitch..	PDF
PSAS4F3130091TR		Amphenol Communications Solutions	SAS/PCIe 4.0 (U.2 & U.3) Connectors, Storage & Server System, 68 Pin, Vertical, Surface Mount , Receptacle.	PDF
69913-009		Amphenol Communications Solutions	1x8 PCB Header, Low Profile Right Angle, 3.81mm (0.15inch) Solder tail, Pebble Gray	PDF

J 13009 - 2 Price and Stock

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onsemi FJP13009H2TU Bipolar Transistors - BJT NPN Sil Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FJP13009H2TU		1,022			1 $2.87 10 $1.45 100 $1.18 1000 $1.18 10000 $1.18	Buy Now
onsemi FJP13009TU Bipolar Transistors - BJT NPN Sil Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FJP13009TU		837			1 $2.23 10 $1.08 100 $0.87 1000 $0.87 10000 $0.87	Buy Now
Advanced Energy Industries Inc UFE1300-96S24C1J Power Supplies - Rack Mount 24V output, 1300W 1U x 5.4" x 10", I2C (UFE1300-96S24C1J)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	UFE1300-96S24C1J					1 - 10 - 100 - 1000 - 10000 -	Get Quote

J 13009 - 2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SR 13009 Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2 Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,\| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits	OCR Scan	TE13008 TE13009 SR 13009 E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2	PDF
transistor E 13009 Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d \| ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ \| «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009	PDF
j 13009 Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R Contextual Info: ± 0 N m ü re ID Is- ; / l \ t * 4 CUL a. O id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT 7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8P\|$1 p.miiX J^ co ¥ - æ ^	OCR Scan	J-12583 30-JAN j 13009 J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R	PDF
MT4C16270DJ-7 Contextual Info: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical	OCR Scan	MT4C16270 256Kx 512-cycle 40-Pin MT4C1027Q MT4C16270DJ-7	PDF
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data	PDF
2yl1 Abstract: GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007 Contextual Info: MIL-M-38510/324C 15 OCTOBER 1987 SUPERSEDING-MIL-M-38510/324B 16 February 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL OCTAL BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON This specification Is approved for use by all Depart	OCR Scan	HIL-M-38510/324C MIL-M-38510/324B MIL-M-38510, MIL-M-38510/324C 2yl1 GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007	PDF