IXYS DSEI 8 Search Results

Contextual Info: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine

Contextual Info: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM

806-AS

Contextual Info: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode

ixys dsei

Abstract: DSEI 806-AS ixys dsei 8 8-06A IXYS
Contextual Info: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM  IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5

ixys dsei 2x30-04c

Contextual Info: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

IXYS DSEI 2

Abstract: ixys dsei 2x30
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5

ixys dsei

Abstract: IXYS DSEI 2 ixys dsei 8 806-AS
Contextual Info: DSEI 8 Fast Recovery Epitaxial Diode FRED VRSM V 640 640 VRRM Type C A TO-263 AA DSEI 8-06AS NC V 600 600 A DSEI 8-06A DSEI 8-06AS C (TAB) Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

ixys dsei 2x30-06c

Abstract: ixys dsei 2x30-05c
Contextual Info: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060

Contextual Info: □IXYS DSEI 20-12A Fast Recovery Epitaxial Diode FRED ^R S M 1200V v rrM TyPe 1200V DSEI 20-12A Symbol Test Conditions ^F R M S T"vj ^FAVM ^FRM ^FSM TVJ = A TVJ = 1 50°C TVJ = f , \ 70 17 A 220 A A 130 140 A A t = 10 ms (50 Hz), sine 110 A t = 8.3 ms (60 Hz), sine

Contextual Info: DSEI 36-06AS VRRM = 600 V IFAVM = 37 A = 35 ns trr Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type C A TO-263 AB A A DSEI 36-06AS C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions IFRMS IFAVM 1 IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

TFR 600

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD DSEI 60-02A C C A Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM

Contextual Info: n ix Y S Fast Recovery Epitaxial Diode FRED v V rrm V V ¥ rsm 640 640 DSEI8 IFAVM vrRRM t. A T yp e 600 600 / \ \ C 8A 600 V 35 ns TO-220 AC DSEI 8-06A m DSEI 8-06A DSEI 8-06AS A = Anode, C = Cathode TO-263 AAk DSEI 8-06AS S ym bo l T e s t C o n d itio n s

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V = 35 ns trr TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V = 35 ns trr TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED V 200 VRRM miniBLOC, SOT-227 B E72873 Type V 200 DSEI 2x61-02A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM IFSM

Contextual Info: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

IXYS DSEI 2

Abstract: 6006A 60-06A
Contextual Info: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD C DSEI 60-06A DSEI 60-06AT C A TO-268 AA (AT Type) A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①

IXYS DSEI60-06A

Abstract: circuit motor forward reverse control power recovery diode SMPS 30 60-06A DSEI60-06A
Contextual Info: Datum 971211 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande

Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

ixys dsei 2x31-10b

Contextual Info: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B

Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①