IXYS DSEI 2 Search Results

Contextual Info: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine

Contextual Info: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM

806-AS

Contextual Info: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

ixys dsei 2x30-06c

Abstract: ixys dsei 2x30-05c
Contextual Info: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060

IXYS DSEI 2

Abstract: 6006A 60-06A
Contextual Info: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD C DSEI 60-06A DSEI 60-06AT C A TO-268 AA (AT Type) A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①

ixys dsei 2x30-04c

Contextual Info: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine

ixys dsei 2x31-10b

Contextual Info: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B

Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①

ixys dsei 12-10a

Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Contextual Info: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 600 VRRM Type C IFAVM = 60 A VRRM = 600 V = 35 ns trr TO-247 AD V 600 C DSEI 60-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

E72873

Abstract: 30-10B
Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

Contextual Info: DSEI 12-06A IFAV = 14 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

ixys dsei 12-12a

Abstract: 12-12A ixys dsei 120 1212a TO-220 1200V 11A DSEI IXYS ixys dsei 12 ixys dsei 12-10a
Contextual Info: DSEI 12-12A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5

Contextual Info: DSEI 12-12A IFAV = 11 A VRRM = 1200 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM

Contextual Info: DSEI 12-10A IFAV = 12 A VRRM = 1000 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM

IXYS DSEI 2

Abstract: ixys dsei 2x30
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5

ixys dsei

Abstract: IXYS DSEI 2 ixys dsei 8 806-AS
Contextual Info: DSEI 8 Fast Recovery Epitaxial Diode FRED VRSM V 640 640 VRRM Type C A TO-263 AA DSEI 8-06AS NC V 600 600 A DSEI 8-06A DSEI 8-06AS C (TAB) Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

ixys dsei 2x30

Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

Contextual Info: DSEI 12-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns 1 3 Type 2/4 DSEI 12-06AS Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

ixys dsei

Abstract: IXYS DSEI 2X
Contextual Info: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400

DSEI IXYS 2x31-12B

Abstract: 2x31-12B
Contextual Info: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

ixys dsei

Abstract: IRM 1200 80D-5
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM