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    IXYN82N120C3 Search Results

    IXYN82N120C3 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXYN82N120C3
    		IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 105A SOT-227B Original PDF 6
    IXYN82N120C3H1
    		IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT MODULE 1200V 105A SOT227B Original PDF 7
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    IXYS Corporation IXYN82N120C3H1

    IGBT MODULE 1200V 105A SOT-227B
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    DigiKey IXYN82N120C3H1 Tube 369 1
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    Mouser Electronics IXYN82N120C3H1 511
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    Chip 1 Exchange IXYN82N120C3H1 1,547
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    IXYS Corporation IXYN82N120C3

    IGBT MODULE 1200V 105A SOT-227B
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    DigiKey IXYN82N120C3 Tube 276 1
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    Littelfuse Inc IXYN82N120C3

    Disc Igbt Xpt-Genx3 Sot-227B(Mini/ Tube |Littelfuse IXYN82N120C3
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    Littelfuse Inc IXYN82N120C3H1

    Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXYN82N120C3H1
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    RS IXYN82N120C3H1 Bulk 8 Weeks 10
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    IXYN82N120C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXYN 82N120C3

    Abstract: 82N120C3 IXYN82N120C3 ixyn82n120 ixyn
    Contextual Info: Advance Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous


    Original     		IXYN82N120C3 IC110 OT-227B, E153432 82N120C3 IXYN 82N120C3 IXYN82N120C3 ixyn82n120 ixyn PDF

    Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYN82N120C3H1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient ±20 ±30 V


    Original     		IC110 IXYN82N120C3H1 OT-227B, E153432 IF110 82N120C3 PDF

    IXYN82N120C3H1

    Abstract: ixyn82n120 ixyn82n120c3
    Contextual Info: IXYN82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30


    Original     		IXYN82N120C3H1 IC110 IF110 OT-227B, E153432 82N120C3 IXYN82N120C3H1 ixyn82n120 ixyn82n120c3 PDF

    82N120C3

    Contextual Info: Preliminary Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous


    Original     		IXYN82N120C3 IC110 OT-227B, E153432 82N120C3 2-13-12-A PDF

    82N120C3

    Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN82N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous


    Original     		IC110 IXYN82N120C3 OT-227B, E153432 82N120C3 PDF

    Contextual Info: IXYN82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 46A 3.2V 93ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Ec Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYN82N120C3H1 IC110 OT-227B, E153432 IF110 PDF