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    IXYB82N120C3H1 Search Results

    IXYB82N120C3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXYB82N120C3H1
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 164A 1040W PLUS264 Original PDF 7
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    IXYB82N120C3H1 Price and Stock

    IXYS Corporation

    IXYS Corporation IXYB82N120C3H1

    IGBT 1200V 164A PLUS264
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    DigiKey IXYB82N120C3H1 Tube 299 1
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    Mouser Electronics IXYB82N120C3H1 270
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    Future Electronics IXYB82N120C3H1 Tube 300
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    TME IXYB82N120C3H1 1
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    Vyrian IXYB82N120C3H1 104
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    IXYS Corporation IXYB82N120C3H1 (XPT GENX3 SERIES)

    Igbt, Single, 1.2Kv, 164A, To-264Aa; Continuous Collector Current:164A; Collector Emitter Saturation Voltage:2.75V; Power Dissipation:1.04Kw; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Ixys Semiconductor IXYB82N120C3H1
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    Newark IXYB82N120C3H1 (XPT GENX3 SERIES) Bulk 5 1
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    IXYB82N120C3H1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IXYB82N120C3H1 IC110 PLUS264TM IF110 PDF

    IXYB82N120

    Abstract: 82N120C3 IXYB82N120C3H1
    Contextual Info: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IXYB82N120C3H1 IC110 PLUS264TM IF110 82N120C3 IXYB82N120 IXYB82N120C3H1 PDF

    Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYB82N120C3H1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IC110 IXYB82N120C3H1 PLUS264TM IF110 82N120C3 PDF