IXTT69N30P Search Results

IXTT69N30P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTT69N30P		IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF	105.58KB	5

IXTT69N30P Price and Stock

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IXYS Corporation IXTT69N30P MOSFET N-CH 300V 69A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT69N30P	Tube			300	1 - 10 - 100 - 1000 $7.07 10000 $7.07	Buy Now
Mouser Electronics	IXTT69N30P					1 $14.15 10 $10.57 100 $10.57 1000 $7.66 10000 $7.66	Get Quote
Bristol Electronics	IXTT69N30P		30		1	1 $8.49 10 $6.37 100 $5.73 1000 $5.73 10000 $5.73	Buy Now
Quest Components ()	IXTT69N30P		24			1 $11.32 10 $8.49 100 $8.49 1000 $8.49 10000 $8.49	Buy Now
	IXTT69N30P		24			1 $14.06 10 $12.50 100 $11.56 1000 $11.56 10000 $11.56	Buy Now
TTI	IXTT69N30P	Tube			300	1 - 10 - 100 - 1000 $7.66 10000 $7.66	Buy Now

New Advantage Corporation	IXTT69N30P		24		1	1 - 10 - 100 $20.73 1000 $20.73 10000 $20.73	Buy Now
Littelfuse Inc IXTT69N30P Disc Mosfet N-Ch Std-Polar To-268Aa/ Tube \|Littelfuse IXTT69N30P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTT69N30P	Bulk			300	1 - 10 - 100 - 1000 $7.42 10000 $7.42	Buy Now

IXTT69N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	IXTT69N30P IXTQ69N30P O-268 100ms 69N30P 0-16-09-A	PDF
s69a Abstract: IXTQ69N30P IXTT69N30P TO-3P Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	IXTT69N30P IXTQ69N30P O-268 063in) 100ms 69N30P 0-16-09-A s69a IXTQ69N30P IXTT69N30P TO-3P	PDF
IXTQ69N30 Abstract: IXTQ69N30P IXTT69N30P 7V60 Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A ≤ 49 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous	Original	IXTQ69N30P IXTT69N30P O-268 69N30P IXTQ69N30 IXTQ69N30P IXTT69N30P 7V60	PDF
Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P	PDF
Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P	PDF
IXTQ69N30P Abstract: IXTT69N30P Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	IXTT69N30P IXTQ69N30P O-268 063in) 100ms IXTQ69N30P IXTT69N30P 69N30P 0-16-09-A	PDF