IXTT1N450HV Search Results

IXTT1N450HV Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTT1N450HV		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 1A TO268	Original	PDF		5

IXTT1N450HV Price and Stock

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Littelfuse Inc IXTT1N450HV MOSFET N-CH 4500V 1A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT1N450HV	Tube			1	1 $52.87 10 $52.87 100 $34.43 1000 $34.43 10000 $34.43	Buy Now
Verical	IXTT1N450HV		300		2	1 - 10 $62.26 100 $58.32 1000 $57.32 10000 $57.32	Buy Now
Newark	IXTT1N450HV	Bulk			300	1 - 10 - 100 - 1000 $36.09 10000 $36.09	Buy Now
IXYS Corporation IXTT1N450HV MOSFETs 4500V 1A HV Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT1N450HV					1 $53.95 10 $34.44 100 $34.44 1000 $34.43 10000 $34.43	Get Quote
Future Electronics	IXTT1N450HV	Tube			300	1 - 10 - 100 $33.26 1000 $32.92 10000 $32.92	Buy Now
TTI	IXTT1N450HV	Tube			300	1 - 10 - 100 - 1000 $33.59 10000 $33.59	Buy Now
TME	IXTT1N450HV				1	1 $52.05 10 $47.83 100 $47.83 1000 $47.83 10000 $47.83	Get Quote
Chip Stock	IXTT1N450HV		495			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXTT1N450HV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   85 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous	Original	IXTT1N450HV O-268HV 100ms 1N450 2-13-A	PDF
Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   80 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous	Original	IXTT1N450HV O-268HV 100ms 1N450 H7-P640	PDF
Contextual Info: IXTT1N450HV IXTH1N450HV High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode = 4500V = 1A   80 TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXTT1N450HV IXTH1N450HV O-268HV 100ms 1N450 H7-P640	PDF
DS100500 Contextual Info: Advance Technical Information IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A Ω ≤ 85Ω N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT1N450HV O-268 100ms 100ms 1N450 DS100500	PDF