DS100500 Search Results
DS100500 Datasheets Context Search
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Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A 85 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous |
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IXTT1N450HV O-268HV 100ms 1N450 2-13-A | |
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Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A 80 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous |
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IXTT1N450HV O-268HV 100ms 1N450 H7-P640 | |
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Contextual Info: IXTT1N450HV IXTH1N450HV High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode = 4500V = 1A 80 TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M |
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IXTT1N450HV IXTH1N450HV O-268HV 100ms 1N450 H7-P640 | |
DS100500Contextual Info: Advance Technical Information IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A Ω ≤ 85Ω N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTT1N450HV O-268 100ms 100ms 1N450 DS100500 |