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    IXTT10N100D2 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT10N100D2
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A T0-267 Original PDF 5
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    IXTT10N100D2 Price and Stock

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    IXYS Corporation IXTT10N100D2

    MOSFETs D2 Depletion Mode Power MOSFETs
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    Mouser Electronics IXTT10N100D2 784
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    TTI IXTT10N100D2 Tube 300
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    Littelfuse Inc IXTT10N100D2-TRL

    MOSFETs IXTT10N100D2-TRL
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    Onlinecomponents.com IXTT10N100D2-TRL
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    Littelfuse Inc IXTT10N100D2

    Discmosfet N-Ch Depl Mode-D2 To-268Aa/ T; |Littelfuse IXTT10N100D2
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    Onlinecomponents.com IXTT10N100D2
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    IXYS Corporation IXTT10N100D2-TRL

    Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
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    TME IXTT10N100D2-TRL 400
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    IXTT10N100D2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH10N100D2

    Contextual Info: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixth10n100d2ixtt10n100d2o-247o-268+2100ms10n100d2 PDF

    Contextual Info: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixth10n100d2ixtt10n100d2o-247o-268+2100ms10n100d2 PDF