Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTH10N100D2 Search Results

    IXTH10N100D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH10N100D2
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10A TO-247 Original PDF 164.96KB
    SF Impression Pixel

    IXTH10N100D2 Price and Stock

    Select Manufacturer

    IXYS Corporation IXTH10N100D2

    MOSFET N-CH 1000V 10A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH10N100D2 Tube 637 1
    • 1 $17.76
    • 10 $17.76
    • 100 $11.95
    • 1000 $11.95
    • 10000 $11.95
    		Buy Now
    TME IXTH10N100D2 1
    • 1 $17.83
    • 10 $16.17
    • 100 $16.17
    • 1000 $11.93
    • 10000 $11.93
    		Get Quote

    Littelfuse Inc IXTH10N100D2

    Mosfet, N-Ch, 1Kv, 10A, 150Deg C, 695W; Channel Type:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Littelfuse IXTH10N100D2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXTH10N100D2 Bulk 520 1
    • 1 $23.80
    • 10 $21.02
    • 100 $18.24
    • 1000 $17.63
    • 10000 $17.63
    		Buy Now
    RS IXTH10N100D2 Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $17.56
    • 1000 $17.00
    • 10000 $17.00
    		Get Quote

    IXTH10N100D2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH10N100D2

    Contextual Info: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2 PDF

    Contextual Info: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10N100D2 IXTT10N100D2 O-247 O-247) O-268 100ms 10N100D2 PDF