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    IXYS Corporation IXTQ160N075T

    MOSFET N-CH 75V 160A TO3P
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    IXTQ160N075T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTQ160N075T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-3P Original PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N075T IXTQ160N075T VDSS ID25 RDS on = 75 V = 160 A Ω ≤ 6.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTH160N075T IXTQ160N075T O-247 160N075T

    IXTH160N075T

    Abstract: IXTQ160N075T 160N075
    Text: Preliminary Technical Information IXTH160N075T IXTQ160N075T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 75 V = 160 A Ω ≤ 6.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTH160N075T IXTQ160N075T O-247 160N075T IXTH160N075T IXTQ160N075T 160N075

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T